• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.1
• /
• pp.84-92
• /
• 2000

A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.2
• /
• pp.156-162
• /
• 2016

This paper proposes a novel orthogonally-polarized dual-band switchable microstrip antenna. The proposed antenna consists of a perpendicular feeding network and an radiator with a PIN-installed H-shaped slot. When the states of one single PIN diode in H-slot are controlled by bias voltages, the controlled physical geometry of the H-slot determines the operation frequencies of switchable 1.80 GHz and 2.43 GHz for vertically polarized linear polarization and fixed 2.06 GHz for horizontally linear polarization. The implemented antenna experimentally demonstrates reconfigurable dual-band capability by means of controling the states of the PIN diode. The simulation and measurement results of the implemented antenna have been in good agreement with the reflection coefficients, realized antenna gains and far-field radiation patterns at each of the PIN diode states.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.2
• /
• pp.199-207
• /
• 2011

A Ku-band low noise amplifier has been designed and fabricated by using 0.25 um SiGe BiCMOS process. The developed Ku-band LNA RFIC which has been designed with hetero-junction bipolar transistor(HBT) in the BiCMOS process have noise figure about 2.0 dB and linear gain over 19 dB in the frequency range from 9 GHz to 14 GHz. Optimization technique for p-tap value and electro-magnetic(EM) simulation technique had been used to overcome the inaccuracy in the PDK provided from the foundry service company and to supply the insufficient inductor library. The finally fabricated low noise amplifier of two fabrication runs has been implemented with the size of $0.65\;mm{\times}0.55\;mm$. The pure amplifier circuit layout with the reduced size of $0.4\;mm{\times}0.4\;mm$ without the input and output RF pads and DC bais pads has been incorporated as low noise amplication stages in the multi-function RFIC for the active phased array antenna of Ku-band satellite VSAT.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.19 no.10
• /
• pp.1159-1165
• /
• 2008

In this paper, a single-feed equilateral-triangular microstrip antenna with truncated corners is used for achieving diverse radiation polarization. The proposed antenna is excited by a microstrip line, which is place parallel to an oblique side of the equilateral-triangular patch. Depending on whether the three identically-sized comers of the triangular patch are cut or not, the equilateral-triangular microstrip antenna shows linear polarization(LP) or left-hand circular polarization(LHCP) or Tight-hand circular polarization(RHCP). Based on the equilateral-triangular microstrip antenna with truncated corners, a novel reconfigurable microstrip antenna with switchable polarization sense is also proposed. The proposed reconfigurable antenna has a simple structure, consisting of a corner-truncated triangular patch, a small triangular conductor, and a microstrip line. Using a biased PIN diode between the patch and the small triangular conductor, it can produce LP or RHCP according to bias voltages. From the measured results, low cross polarization level when operated in the linear state and good axial ratio in the circular state are observed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.17 no.11 s.114
• /
• pp.1105-1111
• /
• 2006

In this paper, using low-temperature co-fired ceramic(LTCC) based system-in-package(SiP) technology, a very compact power amplifier LTCC module was designed, fabricated, and then characterized for 60 GHz wireless transmitter applications. In order to reduce the interconnection loss between a LTCC board and power amplifier monolithic microwave integrated circuits(MMIC), bond-wire transitions were optimized and high-isolated module structure was proposed to integrate the power amplifier MMIC into LTCC board. In the case of wire-bonding transition, a matching circuit was designed on the LTCC substrate and interconnection space between wires was optimized in terms of their angle. In addition, the wire-bonding structure of coplanar waveguide type was used to reduce radiation of EM-fields due to interconnection discontinuity. For high-isolated module structure, DC bias lines were fully embedded into the LTCC substrate and shielded with vias. Using 5-layer LTCC dielectrics, the power amplifier LTCC module was fabricated and its size is $4.6{\times}4.9{\times}0.5mm^3$. The fabricated module shows the gain of 10 dB and the output power of 11 dBm at P1dB compression point from 60 to 65 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.10 no.7
• /
• pp.1044-1052
• /
• 1999

A 2-stage 1 watt MMIC(Monolithic Microwave Integrated Circuits) HPA(High Power Amplifiers) at 20 GHz band has been designed and fabricated. The $0.15\mu\textrm{m}$ with the width of $400\mu\textrm{m}$for single device pHEMT technology was used for the fabrication of this MMIC HPA. Due to the series feedback technique from source to ground, bias circuits and stabilization circuits on the main microstrip line, the stability factors(Ks) are more than one at full frequency. The independent operation for each stage and excellent S11, S22 less than -20 dB have been obtained by using lange couplers. For beginning the easy design, linear S-parameters have been extracted from the nonlinear equivalent circuit in foundry library, and equivalent circuits of devices at in/output ports were calculated from this S-parameters. The measured performances, which are in well agreement with the predicted ones, showed the MMIC HPA in this paper has the minimum 15 dB of linear gain, -20 dB of reflection coefficients and 31 dBm of output power over 17~25 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.10
• /
• pp.917-925
• /
• 2016

Schmitt Trigger logic is a gate level design method to have hysteresis characteristics to improve noise immunity in digital circuits. Dynamic Threshold voltage MOS(DTMOS) Schmitt trigger circuits can improve noise immunity without adding additional transistors but by controlling substrate bias. The performance of DTMOS Schmitt trigger logic has not been verified yet in standard CMOS process through measurement. In this paper, DTMOS Schmitt trigger logic was implemented and verified using Magna $0.18{\mu}m$ MPW process. DTMOS Schmitt trigger buffer, inverter, NAND, NOR and simple digital logic circuits were made for our verification. Hysteresis characteristics, power consumption, and delay were measured and compared with common CMOS logic gates. EM Immunity enhancement was verified through Direct Power Injection(DPI) noise immunity test method. DTMOS Schmitt trigger logics fabricated using CMOS process showed a significantly improved EM Immunity in 10 M~1 GHz frequency range.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.30 no.4
• /
• pp.307-313
• /
• 2019

The traveling wave tube amplifier (TWTA), which can be applied to the Ka-band millimeter-wave multi-mode seeker, consists of an high voltage power supply(HVPS), a grid modulator, a command and control, and an RF assembly. We designed a power supply that generates a -17.9 kV high voltage by synchronizing the pulse repetition frequency(PRF) and power supply switching frequency(i.e. synchronization frequency), and a high-speed grid-switching modulator for RF pulse modulation. The TWTA, which is fabricated through miniaturization with a volume of 3.18 L, has high pulse switching characteristics of up to 18.5 ns. The maximum rise/fall time of the grid on/bias signal and peak power is more than 564.9 W. Moreover, an excellent spurious performance of -68.4 dBc or less was confirmed within the range of PRF and PRF/2.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.30 no.6
• /
• pp.518-521
• /
• 2019

In this paper, an active antenna module operating in the 60 GHz band is designed and fabricated by combining a commercial transmitter chip and patch array antenna. The designed module is composed of an antenna PCB and a PCB with a transmitter chip. The frequency-control and bias-control signals are applied to the transmitter chip, using an Arduino kit. A baseband I/Q signal is also applied to the chip. A ring hybrid balun converts the output of the transmitter module to a single output, which is the output of the transmitter chip that outputs a differential output. The output is delivered to the $2{\times}4$ microstrip patch array antenna PCB as a micro-computer connector. The radiation pattern of the millimeter-wave signal of the final output is compared with the simulation results. The measured radiation patterns of the fabricated active antenna module confirm that the positions of the 3 dB beam width and null point agree well with the simulation results.

• International Journal of Automotive Technology
• /
• v.8 no.4
• /
• pp.429-436
• /
• 2007

In this study, we improved control performance of an EMV (electromechanical valve) system using a PM/EM (permanent magnet/electromagnet) hybrid EMA (electromagnetic actuator) and showed the feasibilities of both soft landing and fast transition of the EMV system using a simple PID control. The conventional EMV systems using only EM show significant nonlinear characteristics. Therefore, it is very difficult to control the valve position and several complex control schemes are used. This paper focused on the control performance improvement using a PM/EM hybrid actuator. In particular, a PM is used as a key design parameter such as a bias current of a magnetic bearing in order to improve the linear characteristic of the actuator, although most PM/EM hybrid actuators use a PM as a power saver during valve-open and -closed states. First, a FE (finite element) analysis was performed to confirm its linear static force characteristics. Then, both a test rig and a valve control system were built in order to prove experimentally the control performance improvement of the actuator. Finally, feasibilities of both soft landing and fast transition of the system were shown experimentally through gain-scheduled PID (proportional derivative integral) control.