• Korean Journal of Optics and Photonics
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• v.26 no.5
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• pp.265-268
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• 2015

An inorganic electroluminescence device based on a green ZnS:(Cu,Al) phosphor was fabricated by a screen printing method. Graphene was added to the phosphor layer to increase the electroluminescence intensity. As the graphene concentration increased, the photoluminescence intensity decreased; on the other hand, the electroluminescence intensity increased, up to 0.6 wt%.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.128-133
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• 2002

In a recent effort to develop polymer light-emitting diodes (LEDs) as promising flat panel display components, measurements of reliable absolute photoluminescence (PL) and electroluminescence (EL) efficiency for polymer materials are required. In this work, we performed the measurement of PL and EL efficiency of luminescent polymers using an integrating sphere technique. The external PL efficiency of MEH-PPV was estimated to be 8 ($\pm$2)% together with the value of 0.02 1m/W for the external EL efficiency. This PL efficiency is in good agreement with published values, indicating that our PL efficiency measurements are somewhat legitimate. We believe this study might contribute to the research and development of organic materials for optoelectronic devices.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.39-43
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• 2000

The light emitting diode (LED) was fabricated from n-type porous silicon. We investigated both the current-voltage characteristics of the LED with various electrode materials and changes of electroluminescence with applied current density. Also we probed changes in electroluminescence as a function of operation time at a given current. In order to Improve the contact area between the electrode material and porous silicon layer, we deposited indium on porous silicon layer by electroplating and investigated the electric characteristics of the LED and changes of electroluminescence.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.365-371
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• 2009

We analyzed photoluminescence (PL) and electroluminescence characteristics of various chirped quantum dot structures. Peaks in EL curves were contributed by excited states of quantum dots (QD), while those in PL curves by grounded states. Based on these characteristics, we suggested that superluminescent diodes with wide spectral bandwidth may be developed if chirped QD structures are designed to make a contribution by ground states to EL characteristics.

• Current Optics and Photonics
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• v.5 no.2
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1026-1029
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• 2003

Polycarbazole derivatives have been investigated for emitting materials of PLED. We synthesized two polymers containing carbazole chromophor, which are different from bonding position. We investigated the spectra of their absorption, photoluminescence, electroluminescence.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.261-264
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• 2000

Organic light emitting diodes(OLEDs) have been expected to find an application as a new type of display since C. W. Tang and VanSlyke first reported on high performance OLEDs. This paper has been stuied a green organic EL device using dye doped emitting layer such as C6(Coumarin 6). In the Alq-based e]ectroluminescence diodes, we applied highly fluorescent molecular(Coumarin 6) and obtained enhancement in the electroluminescence efficiency.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.6
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• pp.261-266
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• 2003

We investigated the effect of oxygen plasma treatment of indium-tin oxide(ITO) surface on the performance of electroluminescence(EL) devices. ITO surface treated oxygen plasma has been analyzed using atomic force microscope(AFM) and X-ray photoelectron spectroscopy(XPS), to investigate the relations between the properties of the ITO surface and the properties of the current-voltage-luminance(I-V-L) characteristics of the fabricated OLED with the structure of ITO(plasma treatment) / TPD / Alq$_3$/ Al. It is found that the oxygen plasma treatment of ITO anode improve the hole injection of the OLED due to the modification of the surface states. The treated ITO anode nay be low voltage with high luminance efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.972-975
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• 2002

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.499-501
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• 2002

본 연구에서는 ETL층으로 널리 알려져 있는 PBD(2-(4-biphenyl)-5-(4-tert-butylphenyl) -1.3,4oxadiazole)를 HBL(Hole-blocking layer) 물질로 이용 하고 Nile red를 사용하여 적색 발광의 EL(electroluminescence) 소자를 제작 평가하였다. 일반적인 유기 EL 소자의 구조인 Anode/HTL(Hole Transport Layer)/ETL(Electron Transport Layer)/Cathode로 이루어져 있다. 여기에 HTL과 ETL사이에 HBL를 추가하여 EL 소자의 성능을 향상 시킬 수 있으면, 이러한 구조의 최종 소자를 제작 EML(emitting layer; Nile red)의 두께 및 임계전압을 달리 하여 소자 의 특성을 평가 연구 하였다.