• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2224-2226
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• 2000

In this paper, we tried to figure out the residual stress of Electroless Nickel (EN) films as a function of process conditions: bath temperatures, pH values, and hypophosphorous acid concentrations. The residual stresses of EN films were in the range of - 4 MPa to 250 MPa depending on process conditions and they were very sensitive to phosphorous concentration in EN film and also hypophosphorous acid concentrations in EN bath.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.372-376
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• 1999

The deposited Cu film on the ferrite magnet was more deposited comparing with that on the plastic magnet. The Cu film became thicker on the S pole comparing with that on the N pole in the both of magnets. The thickness and texture coefficient of deposited copper film affected with direction of line of magnetic force. The difference of pole had little or no effect to the texture coefficient of deposited nickel film. The reaction rate on ferrite magnet and S pole was faster comparing with that on plastic magnet and N pole.

• 한국전기화학회:학술대회논문집
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• 1999.10a
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• pp.35-35
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• 1999

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.11a
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• pp.67-71
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• 2000

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.90-91
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• 1999

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.82-82
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• 1998

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.71-71
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• 2003

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.309-313
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• 2011

The power capacitors used as vehicle inverters must have a small size, high capacitance, high voltage, fast response and wide operating temperature. Our thin film capacitor was fabricated by alumina layers as a dielectric material and a metal electrode instead of a liquid electrolyte in an aluminum electrolytic capacitor. We analyzed the micro structures and the electrical properties of the thin film capacitors fabricated by nano-channel alumina and metal electrodes. The metal electrode was filled into the alumina nano-channel by electroless nickel plating with polyethylene glycol and a palladium catalyst. The spherical metals were formed inside the alumina nano pores. The breakdown voltage and leakage current increased by the chemical reaction of the alumina layer and $PdCl_2$ solution. The thickness of the electroless plated nickel layer was 300 nm. We observed the nano pores in the interface between the alumina layer and the metal electrode. The alumina capacitors with nickel electrodes had a capacitance density of 100 $nF/cm^2$, dielectric loss of 0.01, breakdown voltage of 0.7MV/cm and leakage current of $10^4{\mu}A$.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.13-21
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• 1999

Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.260-260
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• 2009

In high-efficiency crystalline silicon solar cell, If high-efficiency solar cells are to be commercialized, It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper are applied widely in various electronic manufactures as easily formation is available by plating. Ni is shown to be a suitable barrier to Cu diffusin as well as desirable contact metal to silicon. Nickel monosilicide has been suggested as a suitable silicide due to its lower resistivitym lower sintering temperature and lower layer stress than $TiSi_2$. In this paper, Nickel as a seed layer and diffusion barrier is plated by electroless plating to make nickel monosilicide.