• Title/Summary/Keyword: Electrode Structure

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Fabrication of Nano-Channeled Tin Oxide Film Electrode and Evaluation of Its Electrochemical Properties (나노 채널 구조를 가진 산화 주석 박막 전극 제조 및 전기화학적 특성 평가)

  • Park, Su-Jin;Shin, Heon-Cheol
    • Korean Journal of Materials Research
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    • v.22 no.1
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    • pp.1-7
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    • 2012
  • Thin film electrode consisting purely of porous anodic tin oxide with well-defined nano-channeled structure was fabricated for the first time and its electrochemical properties were investigated for application to an anode in a rechargeable lithium battery. To prepare the thin film electrode, first, a bi-layer of porous anodic tin oxides with well-defined nano-channels and discrete nano-channels with lots of lateral micro-cracks was prepared by pulsed and continuous anodization processes, respectively. Subsequent to the Cu coating on the layer, well-defined nano-channeled tin oxide was mechanically separated from the specimen, leading to an electrode comprised of porous tin oxide and a Cu current collector. The porous tin oxide nearly maintained its initial nano-structured character in spite of there being a series of fabrication steps. The resulting tin oxide film electrode reacted reversibly with lithium as an anode in a rechargeable lithium battery. Moreover, the tin oxide showed far more enhanced cycling stability than that of powders obtained from anodic tin oxides, strongly indicating that this thin film electrode is mechanically more stable against cycling-induced internal stress. In spite of the enhanced cycling stability, however, the reduction in the initial irreversible capacity and additional improvement of cycling stability are still needed to allow for practical use.

The Polymer Membrane Electrode by Surfactants for Measuring Continuously Thiocyanate Ion in Wastewater (폐수중 티오시안산이온을 측정하기 위한 계면활성제를 이용한 고분자 막전극)

  • 최종석;안형환;강안수;우인성;황명환
    • Journal of the Korean Society of Safety
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    • v.6 no.4
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    • pp.13-20
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    • 1991
  • Ion-selective electrode responsive to the thiocynate ion prepared by using the quaternary ammonium salts as a active material and PVC as a membrane matrix. The effect of chemical structure and composition of active material, and the membrane thickness on the linear response. the detection limit, and Nernstian slope of the electrode studied. Under the above optimum conditions of membrane, the effect of pH and the selectivity coefficients to various interfering anions were compared and investigated. It was concluded that the functions of thiocynate ion-selective electrode(ISE) were closely related to the chemical structure of the quaternary ammonium salts. The linear response, and the detection limit of the electrode potential increased with the increase of the carbon chain length of the alkyl group in the quaternary ammonium salts in the ascending order of Aliquat 336T, TOAT, TDAT, and TDDAT. The optimum membrane thickness was 0.3mm. The electrode characteristics was better with the decrease of the concentration of active material, and the best concentration was 3 weight percent. The membrane potential was independent of the pH variation in the region from pH 2 to 12. The order of the selectivity coefficients is as follows:Cl $O_4$$^{[-10]}$$I^{[-10]}$ >N $O_3$$^{[-10]}$ >B $r^{[-10]}$$F^{[-10]}$ >C $l^{[-10]}$ >O $A_{c}$ $^{[-10]}$ 〓S $O_4$$^{2-}$.

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Electrical Characteristics of OLED using the Hetero-Electrode (이종 전극에 의한 OLED 전기적 특성 연구)

  • Lee, Jung-Ho;Suh, Chung-Ha;Jeong, Ji-Hoon;Kim, Young-Kwan;Kim, Young-Sik;Kim, Yeoung-Chan
    • Journal of the Korean Applied Science and Technology
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    • v.21 no.4
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    • pp.274-278
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    • 2004
  • In this study, hetero-electrode structures have been fabricated to increase luminescence efficiency. The presence of a thin layer of Sn or Ag at the organic-aluminum interface enhanced both electron injection efficiency and electroluminescence when compared to OLEDs using homogeneous electrode. In this paper, the effect of the cathode using Sn/Al hetero electrode structure is observed. Electric properties of the OLED using Sn/Al hetero cathode are improved in comparison of only Al cathode. The hetero-electrode existing different energy level induces the advanced structure of OLED can accumulate electron density. The luminescence efficiency of OLED with Sn/Al of Ag/Al cathode is higher because of their higher electron injection efficiency. And, the turn on voltage of the OLED device using Sn thin layer is lowest as about 10 V.

Sintering Behavior of Ag-Ni Electrode Powder with Core-shell Structure

  • Kim, Kyung Ho;Koo, Jun-Mo;Ryu, Sung-Soo;Yoon, Sang Hun;Han, Yoon Soo
    • Journal of the Korean institute of surface engineering
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    • v.49 no.6
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    • pp.507-512
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    • 2016
  • Expensive silver powder is used to form electrodes in most IT equipment, and recently, many attempts have been made to lower manufacturing costs by developing powders with Ag-Ni or Ag-Cu core-shell structures. This study examined the sintering behavior of Ag-Ni electrode powder with a core-shell structure for silicon solar cell with high energy efficiency. The electrode powder was found to have a surface similar to pure Ag powder, and cross-sectional analysis revealed that Ag was uniformly coated on Ni powder. Each electrode was formed by sintering in the range of $500^{\circ}C$ to $800^{\circ}C$, and the specimen sintered at $600^{\circ}C$ had the lowest sheet resistance of $5.5m{\Omega}/{\Box}$, which is about two times greater than that of pure Ag. The microstructures of electrodes formed at varying sintering temperatures were examined to determine why sheet resistance showed a minimum value at $600^{\circ}C$. The electrode formed at $600^{\circ}C$ had the best Ag connectivity, and thus provided a better path for the flow of electrons.

Effects of Heterostructure Electrodes on the Reliability of Ferroelectric PZT Thin Films

  • Kim, Seung-Hyun;Woo, Hyun-Jung;Koo, Chang-Young;Yang, Jeong-Seung;Ha, Su-Min;Park, Dong-Yeon;Lee, Dong-Su;Ha, Jo-Woong
    • Journal of the Korean Ceramic Society
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    • v.39 no.4
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    • pp.341-345
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    • 2002
  • The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties with minimal leakage current.

The Analysis of Structure Grounding Using Reduced Scale Model (축소모델을 이용한 구조체 접지 분석)

  • Gil, Hyoung-Jun;Kim, Hyang-Kon;Han, Woon-Ki;Lee, Ki-Yeon;Choi, Chung-Seog
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2046-2048
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    • 2005
  • This paper deals with ground potential rise of structure grounding electrode when a test current flows through grounding electrode. In order to analyze the potential gradient of ground surface on structure grounding electrode, the reduced scale model has been used. The structures were designed through reducing real buildings and fabricated with four types on a scale of one-one hundred sixty. The supporter was made to put up with weight of structure and could move into vertical, horizontal, rotary direction. When a test current flowed through structure grounding electrodes, ground potential rise was the lowest value at electric cage type(type B). According to resistivity and absorption percentage in concrete attached to structure, the potential distribution of ground surface appeared differently.

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Dual - Drive & - Emission Panel

  • Miyashita, Takuya;Naka, Shigeki;Okada, Hiroyuki;Onnagawa, Hiroyoshi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.707-710
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    • 2004
  • We have proposed on dual-drive & -emission (DDE) panel based on organic light-emitting diodes (OLEDs). The device is composed on independent operation of two OLED structures with two transparent electrodes for data signals and an intermediate reflective electrode for common scan signal. Typical device structure is ITO / organic electroluminescent layer (1) /intermediate reflective electrode / organic electroluminescent layer (2) /transparent electrode. Symmetric bright emission could be obtained by applying AlNd as the intermediate reflective electrode and $MoO_3$ as a hole injection layer for upper device structure. The proposed panel is useful for emissive face-to-face panel exhibited for different images.

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Electrode Shape Design for Multi-Mode Sensors Using Genetic Algorithm (유전 알고리즘을 이용한 다중모드 감지기를 위한 전극의 형상 설계)

  • Park, Chul-Hue;Lee, Ki-Moon;Park, Hyun-Chul
    • Proceedings of the KSME Conference
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    • 2004.11a
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    • pp.637-642
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    • 2004
  • This paper presents a new shape design method for the multi-mode sensor that can detect selected multiple modes for the active vibration control of mechanical structures. The structure used for this study is an isotropic cantilever beam type with a PVDF(polyvinylidene fluoride) which is bonded onto the structure as a sensor. Characteristic behaviors of the sensor are related with the electrode shapes of PVDF. The shape optimization problem is solved by defining a new multi-objective function and using the genetic algorithm. Resulting electrode shape functions have good performances to detect the multiple vibration modes. The results of analytical simulations are compared with those of experiment works. The results agree well each other. Hence, the obtained experimental results give evidence for the validity of the presented theoretical analysis of the electrode shape design problem.

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Fabrication & Properties of Field Emitter Arrays using the Mold Method for FED Application (Mold 법에 의해 제작된 FED용 전계에미터어레이의 특성 분석)

  • ;;;;K. Oura
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.347-350
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    • 2001
  • A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

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A Study on Image Reversal Phenomenon of Three-Electrode Type Electronic Paper Display (3전극형 전자종이 디스플레이의 이미지 반전현상에 관한 연구)

  • Shin, Yong-Kwan;Kim, Young-Cho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.8
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    • pp.524-530
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    • 2015
  • We propose a three-electrode type electronic paper display and its fabrication process to realize single color at the same display panel. We establish a fabrication process with the mixing of electronic ink, loading of this ink, electronic ink assembly, packaging and driving. Also, we discuss an operating principle of this panel and the induced image reversal phenomenon by electric field area of the lower electrodes. This phenomenon is not occurred for the panel having $10{\mu}m$ electrode space. By this pixelation structure like this three-electronic paper display, a single color realization without color filter is possible and various kind of color is defined by a dye selection for charged particles and electrically neutral fluid.