• Title/Summary/Keyword: Electrode Structure

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Structural and electrochemical characterization of K2NiF4 type layered perovskite as cathode for SOFCs (K2NiF4 type 층상 페롭스카이트 구조 La(Ca)2Ni(Cu)O4-δ의 SOFC 양극 특성 및 결정구조 평가)

  • Myung, Jae-ha;Hong, Youn-Woo;Lee, Mi Jai;Jeon, Dae-Woo;Lee, Young-Jin;Hwang, Jonghee;Shin, Tae Ho;Paik, Jong Hoo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.3
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    • pp.116-120
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    • 2015
  • $La_2NiO_{4+{\delta}}$ based oxides, a mixed electronic-ionic conductors (MIECs) with $K_2NiF_4$ type structure, have been considerably investigated in recent decades as electrode materials for advanced solid oxide fuel cells (SOFCs) due to their high electrical conductivity, and oxidation reduction reaction (ORR). In this study, structure properties of $La(Ca)_2Ni(Cu)O_{4+{\delta}}$ were studied as a potential cathode for intermediate temperature SOFCs (IT-SOFCs).

Electrical properties and degradation behavior of Tm2O3 doped barium titanate ceramics for MLCCs (Tm2O3가 첨가된 MLCC용 BaTiO3 유전체의 전기적 특성 및 열화거동)

  • Kim, Do-Wan;Kim, Jin-Seong;Hui, K.N.;Lee, Hee-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.6
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    • pp.278-282
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    • 2010
  • The doping effect of thulium on electrical properties and degradation behavior in barium titanate ceramics ($BaTiO_3$) was investigated in terms of generations of core-shell structure and micro-chemical changes through highly accelerated degradation test. The dielectric specimens of pellet type and multi-layered sheets were prepared by using $BaTiO_3$ with undoped and doped with 1 mol% $Tm_2O_3$. The $BaTiO_3$ ceramics doped with 1 mol% $Tm_2O_3$ had 40% higher dielectric constant (${\varepsilon}$ = 2700) than that of the undoped $BaTiO_3$ specimen at curie temperature and met X7R specification. According to the result of highly accelerated degradation test conducted at $150^{\circ}C$, 70 V, and 24 hr, the oxygen diffusion was declined in dielectrics doped with 1 mol% $Tm_2O_3$. The $Tm^{3+}$ ion substituted selectively Ba site and Ti site and contributed to the generation of the core-shell structure. Oxygen vacancies occurred by substitution for Ti site could reduce excess oxygen that reacted to the Ni electrode.

Structural and Optical Characterizations of VO2 Film on Graphene/Sapphire Substrate by Post-annealing after Sputtering (그래핀/사파이어 기판상에 스퍼터링 후 열처리된 VO2박막의 구조 및 광학적 특성변화 연구)

  • Kim, Keun Soo;Kim, Hyeongkeun;Kim, Yena;Han, Seung-Ho;Bae, Dong Jae;Yang, Woo Seok
    • Journal of the Korean Vacuum Society
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    • v.22 no.2
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    • pp.98-104
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    • 2013
  • $VO_2$ is an attractive thermochromic material, in which its electrical and optical properties can be switched by the structural phase-transition about $68^{\circ}C$. Recently, graphene is also a rising material which is researched as a transparent electrode because of its superior electrical and optical characteristics. In this respect, we try to fabricate the hybridized films using $VO_2$ and graphene on transparent sapphire substrate and then we investigate a structure and characterize an optical property for the samples as a function of temperature. According to the result of IR-transmittance analysis of $VO_2$ films as a function of temperature, the graphene-supported sapphire substrates are better about 10% than the bare sapphire substrates. The mean phase transition temperatures are also decreased as the number of graphene-layers increased and the hysteresis of phase transitions are narrowed.

Prevention of P-i Interface Contamination Using In-situ Plasma Process in Single-chamber VHF-PECVD Process for a-Si:H Solar Cells

  • Han, Seung-Hee;Jeon, Jun-Hong;Choi, Jin-Young;Park, Won-Woong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.204-205
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    • 2011
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

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A study on Electrical and Diffusion Barrier Properties of MgO Formed on Surface as well as at the Interface Between Cu(Mg) Alloy and $SiO_2$ (Cu(Mg) alloy의 표면과 계면에서 형성된 MgO의 확산방지능력 및 표면에 형성된 MgO의 전기적 특성 연구)

  • Jo, Heung-Ryeol;Jo, Beom-Seok;Lee, Jae-Gap
    • Korean Journal of Materials Research
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    • v.10 no.2
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    • pp.160-165
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    • 2000
  • We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.

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Chimie Douce Synthesis of Chalcogen-Doped Manganese Oxides (칼코겐이 도핑된 망간 산화물의 저온합성 연구)

  • Hwang, Seong-Ju;Im, Seung-Tae;Park, Dae-Hun;Yun, Yeong-Su
    • Journal of the Korean Chemical Society
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    • v.50 no.4
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    • pp.315-320
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    • 2006
  • manganese oxides have been prepared by Chimie Douce redox reaction between permanganate and chalcogen element fine powder under acidic condition (pH = 1). According to powder X-ray diffraction analyses, the S- and Se-doped manganese oxides are crystallized with layered birnessite and tunnel-type -MnO2 structures, respectively. On the contrary, Te-doped compound was found to be X-ray amorphous. According to EDS analyses, these compounds contain chalcogen dopants with the ratio of chalcogen/manganese = 4-7%. We have investigated the chemical bonding character of these materials with X-ray absorption spectroscopic (XAS) analysis. Mn K-edge XAS results clearly demonstrated that the manganese ions are stabilized in octahedral symmetry with the mixed oxidation states of +3/+4. On the other hand, according to Se K- and Te L1-edge XAS results, selenium and tellurium elements have the high oxidation states of +6, which is surely due to the oxidation of neutral chalcogen element by the strong oxidant permanganate ion. Taking into account their crystal structures and Mn oxidation states, the obtained manganese oxides are expected to be applicable as electrode materials for lithium secondary batteries.

Synthesis of CoFe2O4 Nanoparticles as Electrocatalyst for Oxygen Evolution Reaction (산소 발생 반응 용 전기화학촉매로 사용되는 CoFe2O4 나노 입자 합성 및 특성 분석)

  • Lee, Jooyoung;Kim, Geulhan;Yang, Juchan;Park, Yoo Sei;Jang, Myeong Je;Choi, Sung Mook
    • Journal of the Korean Electrochemical Society
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    • v.23 no.4
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    • pp.97-104
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    • 2020
  • One of the main challenges of electrochemical water splitting technology is to develop a high performance, low cost oxygen-evolving electrode capable of substituting a noble metal catalyst, Ir or Ru based catalyst. In this work, CoFe2O4 nanoparticles with sub-44 nmsize of a inverse spinel structure for oxygen evolution reaction (OER) were synthesized by the injection of KNO3 and NaOH solution to a preheated CoSO4 and Fe(NO3)3 solution. The synthesis time of CoFe2O4 nanoparticles was controlled to control particle and crystallite size. When the synthesis time was 6 h, CoFe2O4 nanoparticles had high conductivity and electrochemical surface area. The overpotential at current denstiy of 10 mA/㎠ and Tafel slope of CoFe2O4 (6h) were 395 mV and 52 mV/dec, respectively. In addition, the catalyst showed excellent durability for 18 hours at 10 mA/㎠.

Improvement of Structure and Electrochemical Properties of LiNi0.5Mn1.5O4 for High Voltage Class Cathode Material by Cr Substitution (Cr 치환을 이용한 고전압용 양극 활물질 LiNi0.5Mn1.5O4의 구조와 전기화학적 성능의 개선)

  • Eom, Won-Sob;Kim, Yool-Koo;Cho, Won-Il;Jang, Ho
    • Journal of the Korean Electrochemical Society
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    • v.8 no.2
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    • pp.82-87
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    • 2005
  • The cathode material, $LiNi_{0.5}Mn_{1.5}O_4$, for high voltage applications of Li-ion batteries exhibits impurity phases due to oxygen deficiency during the high temperature heat treatment. The impurity phase reduces the electrochemical properties of the electrode since the deficiency spinel structure disturbs the lithium ion intercalation and deintercalation. In this study, Cr-substituted $LiNi_{0.5-x}Mn_{1.5}Cr_xO_4(0{\leq}x{\leq}0.05)$ powders are synthesized by a sol-gel method in order to reduce the amount of the impurity phases in the $LiNi_{0.5-x}Mn_{1.5}Cr_xO_4$. Thermal analysis of the cathode material shows that the $LiNi_{0.5}Mn_{1.5}O_4$ without Cr substitution looses $2\%$ of its weight due to oxygen deficiency but the amount of weight loss is diminished when Cr is substituted. XRD analysis also supports the reduction of the impurity phases in the cathode after chromium substitution, suggesting that the improvement of the electrochemical properties such as the capacity retention and electrochemical stability are attributed to the low content of impurity phases in the Cr-substituted $LiNi_{0.5-x}Mn_{1.5}Cr_xO_4.$

Design of Vertical Type MEMS Probe with Branch Springs (분기된 구조를 갖는 수직형 MEMS 프로브의 설계)

  • Ha, Jung-Rae;Kim, Jong-Min;Kim, Byung-Ki;Lee, June-Sang;Bae, Hyeon-Ju;Kim, Jung-Yup;Lee, Hak-Joo;Nah, Wan-Soo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.7
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    • pp.831-841
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    • 2010
  • The conventional vertical probe has the thin and long signal path that makes transfer characteristic of probe worse because of the S-shaped structure. So we propose the new vertical probe structure that has branch springs in the S-shaped probe. It makes closed loop when the probe mechanically connects to the electrode on a wafer. We fabricated the proposed vertical probe and measured the transfer characteristic and mechanical properties. Compared to the conventional S-shaped vertical probe, the proposed probe has the overdrive that is 1.2 times larger and the contact force that is 2.5 times larger. And we got the improved transfer characteristic by 1.4 dB in $0{\sim}10$ GHz. Also we developed the simulation model of the probe card by using full-wave simulator and the simulation result is correlated with measurement one. As a result of this simulation model, the cantilever probe and PCB have the worst transfer characteristic in the probe card.

Effects of PtMn composition on carbon supported PtMn catalysts for PEMFC (Mn조성비(組成比)가 PEMFC용(用) Pt/C 전극촉매(電極觸媒) 특성(特性)에 미치는 영향(影響)에 관(關)한 연구(硏究))

  • Yoo, Sung-Yeol;Kang, Suk-Min;Lee, Jin-A;Rhee, Choong-Kyun;Ryu, Ho-Jin
    • Resources Recycling
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    • v.21 no.2
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    • pp.34-40
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    • 2012
  • $Pt_{10}$/C, $Pt_9Mn_1$/C, $Pt_7Mn_3$/C electrocatalysts for Polymer Electrolyte Membrane Fuel Cells(PEMFCs) were synthesized by reduction with HCHO and their activity as a oxygen reduction reaction(ORR) was examined at half cell. The electrochemical oxygen reduction reaction(ORR) was studied by using a glaasy carbon electrode through cyclic voltammetric curves(CV) in a 1 M $H_2SO_4$ solution. The ORR activities of $Pt_9Mn_1$/C were higher than $Pt_{10}$/C, $Pt_7Mn_3$/C. Also potential-current curves of $Pt_9Mn_1$/C at 0.9, 0.8, 0.7, 0.6V for 5minutes respectively were higher than $Pt_{10}$/C, $Pt_7Mn_3$/C. Physical characterization was made by using x-ray diffraction(XRD) and transmission electron microscope(TEM). The TEM images of $Pt_9Mn_1$/C, $Pt_{10}$/C catalysts showed homogenous particle distribution with particle size of about 2.7 nm, 3 nm respectively and then the XRD results showed that the crystalline structure of the synthesized catalysts are seen FCC structure.