• 한국광학회지
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• 제14권1호
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• pp.38-43
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• 2003

$LiNbO_3$의 스트레인광학효과와 ~l.4$\mu\textrm{m}$ 두께 이상으로 증착된 Mo(molybdenum)/Pt(platinum) 금속 박막으로부터 발생되는 압축스트레인을 이용하여 채널 광도파로 제작 공정을 개발하였다. 제작된 광도파로는 단일모드로 관찰되었으며, 삽입 손실이 TE, TM 입사 편광모드 각각에 대해서 6.2, 7.7 dB/cm로 측정되었다. 전극 길이와 간격이 11 mm, 21 $\mu\textrm{m}$인 광변조기를 스트레인광학형 광도파로 구조를 이용하여 제작하였으며, $V_{\pi}$= 16.1 V와 100% 변조 깊이가 1.55$\mu\textrm{m}$ 파장 영역에서 측정되었다. 또한 1$\times$2광 파워 분리기를 제작한 결과 0.63$\mu\textrm{m}$ 파장 영역에서 on/off 특성이 $\pm$25V에서 관찰되었다.

• ETRI Journal
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• 제34권3호
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• pp.361-368
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• 2012

A complete high-frequency small-signal circuit model of a 40 Gb/s butterfly electroabsorption modulator integrated laser module is presented for the first time to analyze and optimize its electro-optic (E/O) response and reflection characteristics. An agreement between measured and simulated results demonstrates the accuracy and validity of the procedures. By optimizing the bonding wire length and the impedance of the coplanar waveguide transmission lines, the E/O response increases approximately 5% to 15% from 20 GHz to 33 GHz, while the signal injection efficiency increases from approximately 15% to 25% over 18 GHz to 35 GHz.

• 한국세라믹학회지
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• 제37권8호
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• pp.731-738
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• 2000

KLN(K3Li2Nb5O15) has attracted a great deal of attention for their potential usefulness in piezoelectric, electro-optic, nonlinear optic, and pyroelectirc devices. Especially, the KLN single crystal has been studied in the field of optics and electronics. However it is hard to produce good quality single crystals due to the crack propagation during crystal growing. One of the solutions of this problem is prepartion of thin film. But the intensive study has not been conducted so far. In this study, after the KLN thin film were prepared by R.F. magnetron Sputtering method on SiO2/Si substrate, the post-annealing methods of RTA(rapid thermal annealin) and IPA(insitu post annealing) were employed. The deposition condition of KLN thin film was RF power(100 W), Working pressure(100 mtorr). The commonness of both RAT and IPA was that the higher were deposition and post annealing temperature, the higher was the intensity of XRD but the less surface roughness. The difference of post-annealing methods affected XRD phase and surface condition very much. And in IPA process, the influence of O2 had much effect on the formation of KLN phase.

• 한국재료학회지
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• 제9권4호
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• pp.355-361
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• 1999

가용성 폴리이마드 주쇄에 Disperse-Red 1 크로모포를 공유결합 시킨 옆사술계 비선형 전기광학 고분자를 합성하였다. 합성된 고분자의 유리전이온도 빛 열분해온도 는 각각 $225^{\circ}C, 310^{\circ}C$이었으며 광통신 파장에서 광학적으로 투명하였다. $100 V/\mu\textrm{m}$의 전기장으로 폴링했을 때, 유전상수는 10 kHz에서 3.37이며, 파장 1300 nm에서, 굴절률은 $n_{TE} 및 n_{TM}$ 모두 1.631로같았으며, 전기광학계수는 4.6 ~ 9.2 pm/V이였다. 폴링한 후 $180^{\circ}C$에서 1시간 동안 유지시킨 시편의 전기광학계수의 값은 감소되지 않 았으며, 장기적인 관점에서 $90^{\circ}C$에서 500 시간 동안 유지시킨 시편의 전기광학계수도 변함이 없었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.61-62
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• 2009

Electro-optical properties of liquid crystal display (LCD) using fringe-field switching (FFS) devices depend on many parameters such as cell retardation, electrode structure, magnitude and sign of dielectric anisotropy, rubbing angle and cell gap. In this paper, the light efficiency of FFS device depending on magnitude of positive dielectric anisotropy with other cell parameters such as rubbing angle and angle and cell gap have been explored compared with FFS device using LC with negative dielectric anisotropy.

• 한국광학회지
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• 제14권5호
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• pp.498-503
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• 2003

뽀앙카레 공에서 액정셀의 전기광학적 편광투과특성을 분석하고, 이를 바탕으로 여러 파장에 대해 액정표시소자의 밝기와 명암대비를 최적화하는 위상판의 규격을 정하는 기본조건을 찾았다. 이 조건에 따르면 두 파장에 대해서는 분산특성이 적절하게 조절된 위상판 2매, 세 파장의 경우에는 두 파장으로 근사하거나 위상판 3매가 필요하다.

• Journal of Information Display
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• 제7권2호
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• pp.12-15
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• 2006

We propose a patterning method of liquid crystal (LC) alignment layer for producing multi-domain LC structures. By controlling thermal conditions during micro-contact printing procedures and facilitating wetting properties of patterning materials, patterned LC orientation can be easily obtained on a bare ITO surface or other polymer films. The newly proposed patterning method is expected to be a very useful tool for fabricating multi-domain LC structures to enhance or design electro-optic properties of LC-based devices.

• 한국생산제조학회지
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• 제23권2호
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• pp.133-137
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• 2014

The recent development of electro-optic devices and anticorrosion media has made it necessary investigate infrared optical systems with solid-solid interfaces of materials with amorphous characteristics. One of the most promising classes of materials for these purposes seems to be chalcogenide glasses, which are based on the Ge_Sb_Se system, have drawn much attention because of their use in preparing optical lenses and fibers that are transparent in the range of 3-12 um. In this study, a standard melt-quenching technique was used to prepare amorphous Ge_Sb_Sechalcogenideto be used in the design and manufacture of infrared optical products. The results of structural, optical, and surface roughness analyses of high purity Ge_Sb_Sechalcogenide glasses after various annealing processes reported.

• 한국광학회지
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• 제5권3호
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• pp.404-410
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• 1994

빛이 액정셀을 지날 때의 편광상태의 변화를 뽀앙카레공에서의 회전변환으로 나타내면 액정표시소자의 화면의 밝기와 명암대비는 이 회전변환의 특성(회전각과 회전축의 방향)의 함수로 나타낼 수 있다. 이로부터 액정 화면의 밝기와 명암대비를 동시에 극대화 하기위한 필요조건은 액정셀에 걸린 전압이 비선택전압에서 선택전압으로 바뀔 때의 회전변환의 회전각이 $180^{\circ}$임을 보였다.

• 한국재료학회지
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• 제26권11호
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• pp.598-603
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• 2016

The recent development of electro-optic devices and anticorrosion media has led to the necessity to investigate infrared optical systems with solid-solid interfaces of materials that often have the characteristic of amorphousness. One of the most promising classes of materials for those purposes seems to be the chalcogenide glasses. Chalcogenide glasses, based on the Ge-Sb-Se system, have drawn a great deal of attention because of their use in preparing optical lenses and transparent fibers in the range of 3~12 um. In this study, amorphous Ge-Sb-Se chalcogenide for application in an infrared optical product design and manufacture was prepared by a standard melt-quenching technique. The results of the structural, optical and surface roughness analysis of high purity Ge-Sb-Se chalcogenide glasses are reported after various annealing processes.