• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2007년도 추계학술대회논문집
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• pp.714-717
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• 2007

In this study, a novel actuator was developed by employing the newly-synthesized ionic networking membrane (INM) of poly (styrene-alt-maleic anhydride) (PSMAn)-incorporated poly (vinylidene fluoride) (PVDF). Based on the same original membrane, various samples of INM actuator were prepared through different reduction times with the electroless-plating technique. The as-prepared INM actuators were tested in terms of surface resistance, platinum morphology, resonance frequency, tip displacement, current and blocked force, and their performance was compared to that of the widely-used traditional Nafion actuator. Scanning electron microscope (SEM) and transmission electron microscopy (TEM) revealed that much smaller and more uniform platinum particles were formed on the surfaces of the INM actuators as well as within their polymer matrix. Although excellent harmonic response was observed for the newly-developed INM actuators, this was found to be sensitive to the applied reduction times during the fabrication. The mechanical displacement of the INM actuator fabricated after optimum reduction times was much larger than that of its Nafion counterpart of comparable thickness under the stimulus of constant and alternating current voltage.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.919-923
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• 2010

Copper pillar tin bump (CPTB) was developed for high density chip interconnect technology. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM -1250 dry film photoresist (DFR), copper electroplating method and Sn electro-less plating method. Mechanical shear strength measurements were introduced to characterize the bonding process as a function of thermo-compression. Shear strength has maximum value with $330^{\circ}C$ and 500 N thenno-compression process. Through the simulation work, it was proved that when the copper pillar tin bump decreased in its size, it was largely affected by the copper oxidation.

• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.91-95
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• 2014

This paper presents the structure and process technology of simple and low-cost wafer-level packaging (WLP) for thin film radio frequency (RF) devices. Low-cost practical micromachining processes were proposed as an alternative to high-cost processes, such as silicon deep reactive ion etching (DRIE) or electro-plating, in order to reduce the fabrication cost. Gold (Au)/Tin (Sn) alloy was utilized as the solder material for bonding and hermetic sealing. The small size fabricated WLP of $1.04{\times}1.04{\times}0.4mm^3$ had an average shear strength of 10.425 $kg/mm^2$, and the leakage rate of all chips was lower than $1.2{\times}10^{-5}$ atm.cc/sec. These results met Military Standards 883F (MIL-STD-883F). As the newly proposed WLP structure is simple, and its process technology is inexpensive, the fabricated WLP is a good candidate for thin film type RF devices.

• 한국진공학회지
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• 제8권4A호
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• 한국표면공학회지
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• 제38권4호
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• pp.156-162
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• 2005

Nickel-iron nanocrystalline alloys with different compositions and grain sizes were fabricated by electro-plating for MEMS devices. The iron content of the deposits was changed by varying the nickel/iron ion ratio in the electrolyte. X-ray diffraction (XRD) analysis was applied for measuring the strength of the texture and grain size of the deposits. The nickel/iron atom ratio of the deposits was analyzed by EDS. The hardness of the alloys was evaluated by Vickers hardness indenter. The internal stress of the deposits was measured by Thin Film Stress Measurement using Stoney's formula. Surface morphology and roughness were investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The results of this study revealed that at a grain size of approximately $17\~24$nm the hardness, internal stress and roughness depend strongly on the iron content. With increasing the iron content, the hardness and internal stress of the deposits increased. An excellent correlation between the increase in the internal stress and the loss of (200) texture was found.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.121-121
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• 2000

반도체 산업의 발달에 따라 소자의 보다 빠른 동작 속도와 큰 집적도를 갖은 ULSI 구조를 얻기 위해, 새로운 금속배선 재료가 요구되고 있다. 기존의 금속 배선인 Al 및 Al 합금은 비교적 낮은 비저항과 박막형성의 용이함으로 인하여 현재까지 금속배선 재료로 사용되고 있으나, 고집적화에 따라 RC Time Delay와 Electromigration의 문제점을 들어내었다. 이러한 문제를 해결할 새로운 배선 재료로 Al보다 낮은 비저항을 가지며, electromigration 저항성을 갖는 Cu 금속배선 재료가 활발히 연구되고 있다. 본 실험에서는 (100) Si 웨이퍼를 기판으로 사용하였으며, 각층은 SiO2/Si3N4/EP Cu/Seed Cu/ TaN/SiO2/Si wafer 상태로 증착하였다. 확산방지막으로 TaN을 사용하였고, seed Cu는 sputtering 으로 증착하였으며, seed Cu 만으로 된 박막과 seed Cu + electro plating Cu로 구성된 박막을 제작하였다. 제작 완료된 박막은 N2 분위기에서 20$0^{\circ}C$ 120 min, 45$0^{\circ}C$ 60min 동안 열처리하여 Cu 박막의 조직 변화를 TEM 및 여러 분석방법을 이용하여 분석하였다. Plan-view TEM결과, 45$0^{\circ}C$, 60min 열처리함에 따라 결정립 성장이 일어난 것을 확인 할 수 있었다. 그러나, 성장후에도 twin boundary, stacking fault, dislocation, small defect 등은 여전히 남아 있음이 관찰된다. 그림 1(a)는 as-deposit 상태이며, 그림 1(b)는 45$0^{\circ}C$, 60min 열처리한 plan-view TEM 사진이다.

• Progress in Superconductivity
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• 제7권2호
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• pp.179-183
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• 2006

As a material for SFCL(Superconducting Fault Current Limiter), BSCCO tube with metal stabilizer is a promising candidate, assuring the stability and large power capacity, For the application, the proper soldering technique, which overcome the difficulties of the joining between BSCCO and metal stabilizer, is required. In this study, after soldering In-Bi solder and In-Sn solder with BSCCO superconductor, welding properties between BSCCO and solders were investigated. Because ceramic materials is difficult to weld, Ag electro-plating on BSCCO 2212 is used for intermetallic layer. To find out the best welding condition for superconductor, soldering is tested in the maximum temperature from $155^{\circ}C\;to\;165^{\circ}C$ in the reflow oven. By investigating the composition and thickness of IMC (lntermetallic Compound) created in the reaction of Ag with solder, we analyzed the welding properties of High-Tc superconductor from a micro point of view.

• 마이크로전자및패키징학회지
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• 제15권3호
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• pp.27-33
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• 2008

PDA, 핸드폰과 같은 포터블 제품의 사용이 급증함에 따른 전자 제품의 사용 환경의 변화는 제품의 솔더 조인트 신뢰성을 더욱 필요로 하게 되었다. 무전해 니켈/금 도금 표면 처리는 솔더링 특성이 우수하고, 표면처리 두께가 균일하며 패키징 공정에서 사용되는 광학설비에서 인식이 잘되기 때문에 미세피치 SMT 디바이스와 BGA 기판에 폭넓게 사용되고 있다. 그러나 무전해 니켈/금 도금 표면과 솔더 계면에서 발생되는 취성 파괴가 문제점으로 지적되고 있다. 솔더의 취성 파괴는 솔더링시 금속간 화합물과 무전해 니켈층 사이에 형성된 P-rich 영역의 갈바닉 니켈 부식에 의한 black pad 현상에 기인한다. 이론적으로 평탄한 무전해 Ni표면은 무전해 금도금 과정 중 도금액의 균일하게 순환되기 때문에 black pad 발생을 억제하는 장점을 가지고 있다. 그러나 이러한 장점에도 불구하고 무전해 Ni층의 표면형상을 어떻게 제어 할지에 대한 연구는 충분히 이루어 지지 않고 있다. 본 연구에서는 Cu 하지층의 표면 형상이 무전해 Ni층의 표면 형상에 미치는 영향에 대하여 분석하였다. 이를 위해 Cu 에칭액과 Cu에칭 처리 횟수를 변화시켜 Cu 하지층의 표면 형상을 다양하게 변화시켰다.

• 마이크로전자및패키징학회지
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• 제21권3호
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• pp.43-50
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• 2014

전자 제품의 경박 단소화 및 고집적화가 이루어 지면서 실리콘 집과 인쇄회로기판의 인터커넥션의 고신뢰도가 요구되고 있다. 본 연구는 Sn-4.0wt%Ag-0.5wt%Cu (SAC405) 솔더와 다양한 무전해 Ni-P 도금 두께에서의 high speed shear 에너지 및 파괴 모드를 연구하였다. 파괴 모드 분석을 위하여 집속이온빔(FIB) 분석이 이용되었다. 질산 기상 처리하지 않은 $1{\mu}m$ Ni-P 시편에서 낮은 shear 에너지가 나왔으며, 이는 솔더레지스트 선단에서 파단의 원인을 제공하는 것이 확인되었다. 질산 기상 처리한 시편에서 무전해 Ni-P 도금 두께가 커질수록 취성 파괴 모드는 감소한다. 또 Ni-P 도금 두께와 표면 거칠기(Ra)는 반비례 관계를 가진다. 이는 Ni-P 도금의 표면 거칠기를 낮추면 SAC405 솔더 조인트의 신뢰도를 향상시킨다는 사실을 나타낸다.

• Journal of Electrical Engineering and Technology
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• 제1권2호
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• pp.216-225
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• 2006

This paper presents a new circuit topology of DC busline switch and snubbing capacitor-assisted full-bridge soft-switching PWM inverter type DC-DC power converter with a high frequency link for low voltage large current applications as DC feeding systems, telecommunication power plants, automotive DC bus converters, plasma generator, electro plating plants, fuel cell interfaced power conditioner and arc welding power supplies. The proposed power converter circuit is based upon a voltage source-fed H type full-bridge high frequency PWM inverter with a high frequency transformer link. The conventional type high frequency inverter circuit is modified by adding a single power semiconductor switching device in series with DC rail and snubbing lossless capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge inverter arms and DC busline can achieve ZVS/ZVT turn-off and ZCS turn-on commutation operation. Therefore, the total switching losses at turn-off and turn-on switching transitions of these power semiconductor devices can be reduced even in the high switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules is selected to be 60 kHz. It is proved experimentally by the power loss analysis that the more the switching frequency increases, the more the proposed DC-DC converter can achieve high performance, lighter in weight, lower power losses and miniaturization in size as compared to the conventional hard switching one. The principle of operation, operation modes, practical and inherent effectiveness of this novel DC-DC power converter topology is proved for a low voltage and large current DC-DC power supplies of arc welder applications in industry.