• Proceedings of the KIEE Conference
• /
• 1999.07b
• /
• pp.797-799
• /
• 1999

In this paper, the edge intensification and detection algorithm which is one of image processing operations is considered. Edge detection algorithm is the most useful and important method for image processing or image analysis. The vision system based on these processing and concerned in specific project is proposed and is applied to the inverted pendulum in order to automatically acquire the angles between the bar and the perpendicular reference line. In this paper, the angles that are obtained from some images of computer vision system can offer useful informations for control of real inverted pendulum system. Next, the inverted pendulum will be controlled by the proposed method.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2294-2296
• /
• 2005

Multilayer microstrip lines are an integral part of an MMIC. This paper presents an analysis of multilayer GaAs-MMIC microstrip line using a spectral domain method(SDM) taking into account the effect of the variation in the thickness of various layers of substrates on the characteristic impedance and the effective dielectric constant of the line. This work is expected to be useful in GaAs foundries for accurate CAD modelling of the microstrip lines up to 40GHz.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2336-2338
• /
• 2005

This paper presents optimization of GaAs substrate thickness for GaAs-MMIC processes at high frequencies using a multidielectric microstrip line, that is fabricated using MMIC process

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1319-1320
• /
• 2007

본 연구는 ZnO 박막을 유도 결합 플라즈마를 이용하여, $BCl_3$/Ar 가스 혼합비, RF 전력, 직류 바이어스 전압과 공정 압력을 변경하면서 실험하였다. ZnO 박막의 최고 식각속도는 80%의 $BCl_{3}/(BCl_{3}+Ar)$에서 700 W의 RF 전력, -150 V의 직류 바이어스 전압, 15 mTorr의 공정 압력, $28^{\circ}C$의 기판 온도로 고정시켰을 때 50 nm/min 이었다. 이 조건에서 ZnO 박막과 $SiO_2$의 선택비는 0.75 이었다.

• Proceedings of the KIEE Conference
• /
• 2005.10c
• /
• pp.169-171
• /
• 2005

In this paper, a novel type of auxiliary switched capacitor assisted edge resonant soft switching PWM series load resonant high frequency inverter with two auxiliary edge resonant lossless inductor snubbers is proposed for small consumer induction heating appliances. The operation principle of this high frequency inverter is described using the switching mode equivalent circuits. The practical effectiveness of the newly proposed soft switching inverter are discussed as compared with the conventional soft switching high frequency inverters based on simulation and experimental results from an application point of view.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.263.1-263.1
• /
• 2007

• Proceedings of the KIPE Conference
• /
• 2003.07b
• /
• pp.507-510
• /
• 2003

This paper presents a novel prototype of tile three-phase bridge power block module type a auxiliary resonant AC link snubber circuit, which is effectively used for the three-phase voltage source type sinewave soft switching PWM inverter using IGBTs. Its operating principle Is described for current source load model, along with its practical design approach based on the simulation data. The performance evaluation of the three-phase voltage source type snewave soft switching PWM inverter incorporating a single three-phase bridge mo여le of active auxiliary resonant AC link snubber treated here Is illustrated, which is concerned with power duality efficiency power loss analysis. This inverter is discussed as compared with those of tile three-phase voltage source type sinewave hard switching PWM inverter. The power loss analysis of this soft switching PWM Inverter using IGBT power modules is evaluated on the basis of the measured v-i characteristics and switching power losses of IGBT, and antiparaliel diodes. The practical effectiveness of this inverter is proven by the power loss analysis for distributed power supply.

• Proceedings of the KIPE Conference
• /
• 2005.07a
• /
• pp.207-210
• /
• 2005

This paper describes a design of several ship's emergency lighting system(SELS) that power factor is improved and power is controlled extensively, and techniques to control and monitor this system in remote distance by PC serial communication. The remote monitoring control system is composed of emergency power supply system (EPSS), half bridge(HB)inverter, fluorescent lamp(FL), microprocessor, multi communication interface. EPSS checks the voltage of the emergency backup battery in real time. In case that the voltage of 13[V] or less has been detected for 5[msec] or longer for 3 times in a row, charger circuit is connected for battery charging. Experimental works using proposed system confirm that speedy and stable power to be supplied when main power source cut-off, compared with conventional analog type, and input power up to 35.0[%] by adjusting of pulse frequency of the HB inverter.

• Proceedings of the KIPE Conference
• /
• 2014.07a
• /
• pp.512-513
• /
• 2014

본 논문은 3상 인버터에서 직류단 션트 저항을 이용하여 전류를 복원하는 새로운 기법에 대하여 제안한다. 직류단 션트 저항을 이용하여 전류를 측정할 경우, 전동기의 구동에 따른 지령 전압 벡터의 변화에 따라 SVPWM 헥사곤 내부에는 전류의 측정이 불가능한 영역이 존재한다. 기존의 방법들은 지령 벡터가 전류 측정이 불가능한 영역에 위치할 때, 스위칭 패턴에 변화를 주는 방법들을 이용하였다. 그러나, 이 기법들은 스위칭 패턴을 바꾸기 때문에 소음 및 전류 왜곡의 원인이 된다. 본 논문에서는 스위칭 패턴의 변화 없이 전류를 추정할 수 있는 새로운 기법을 소개한다. 제안된 알고리즘의 효율성은 실험적 결과를 통해 증명한다.

• Nanomaterials
• /
• v.12 no.22
• /
• pp.4096-4107
• /
• 2022

In this work, a hybrid-phase transition field-effects-transistor (hyper-FET) integrated with phase-transition materials (PTM) and a multi-nanosheet FET (mNS-FET) at the 3 nm technology node were analyzed at the device and circuit level. Through this, a benchmark was performed for presenting device design guidelines and for using ultra-low-power applications. We present an optimization flow considering hyper-FET characteristics at the device and circuit level, and analyze hyper-FET performance according to the phase transition time (TT) and baseline-FET off-leakage current (I_OFF) variations of the PTM. As a result of inverter ring oscillator (INV RO) circuit analysis, the optimized hyper-FET increases speed by +8.74% and reduces power consumption by -16.55%, with IOFF = 5 nA of baseline-FET and PTM TT = 50 ps compared to the conventional mNS-FET in the ultra-low-power region. As a result of SRAM circuit analysis, the read static noise margin is improved by 43.9%, and static power is reduced by 58.6% in the near-threshold voltage region when the PTM is connected to the pull-down transistor source terminal of 6T SRAM for high density. This is achieved at 41% read current penalty.