• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.229-235
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• 2012

This paper dealt with the fabrication of a partial discharge (PD) analyzer for insulation diagnosis of power facilities like transformers, cables and gas-insulated switchgears. An analytic algorithm for the phase (${\phi}$), the magnitude (q), and the pulse count (n) of PD pulse was designed and a time-frequency (TF) map algorithm was applied in the system to eliminate noises by analyzing the time and the frequency component of signals. All the algorithms were operated by a LabView graphical program. The detection circuit consists of a coupling capacitor, a detection impedance, and a low noise amplifier. A plane-plane and a point-plane electrode system were fabricated to simulate different types of insulation defects. In the experiment, we could easily understand the characteristics of PD pulses using the prototype PD analyzer.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.718-722
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• 2011

In this work, we investigated to the etching characteristics of the TiN thin film in He/$BCl_3/Cl_2$ plasma. The etch rate was measured by the gas mixing ratio, the RF power, the DC bias voltage and the process pressure. The maximum etch rate in He/$BCl_3/Cl_2$ plasma was 59 nm/min. The etch rate increased as the RF power and the DC-bias voltage was increased. The chemical reaction on the surface of the etched the TiN thin films was investigated with X-ray photoelectron spectroscopy (XPS). The intensity of Ti 2p and N 1s peaks are varied during etching process. A new peak was appeared in He/$BCl_3/Cl_2$ plasma. The new peak was revealed Ti-$Cl_x$ by Cl 2p peak of XPS wild scan spectra analysis.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.391-394
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• 2006

This paper presents soft switching zero voltage switching high frequency inverter for rare gas fluorescent lamp using dielectric-barrier discharge phenomenon. The simple high-frequency inverter can completely achieve stable zero voltage soft switching (ZVS) commutation for wide its output power regulation ranges and load variations under its constant high frequency pulse density modulation (PDM) scheme. Its transient and steady state operating principle is originally described and discussed for a constant high-frequency PDM control strategy under a stable ZVS operation commutation, together with its output effective power regulation characteristics-based on the high frequency PDM strategy. The experimental operating performances of this high frequency Inverter are illustrated as compared with computer simulation results and experimental ones. Its light dimming characteristics due to power regulation scheme are evaluated and discussed on the basis of simulation and experimental results. The feasible effectiveness of this high frequency inverter appliance implemented here is proven from the practical point of view.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.46-50
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• 2005

BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.183-188
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• 2016

This paper presents the design and characterization of wide band ohmic microswitch with an actuation voltage as low as 20~25 V, and a restoring force of 14.1 μN. The design of the proposed switch is primarily composed of an electrostatic actuator, bridge membrane, cantilever (beam) and coplanar waveguide, suspended over the substrate. The analysis shows an insertion loss of −0.002 dB at 1GHz and remains as low as −0.35 dB, even at 100 GHz. The isolation loss of the switch is sustained at −21.09 dB at 100GHz, with a peak value of −99.58 dB at 1 GHz and up-state capacitance of 4 fF. To our knowledge, this is the first demonstration of a series contact switch, which works over a wide bandwidth (DC-100 GHz) and with such a high and sustained isolation, even at high frequencies and with an excellent figure of merit (f_c=1/2.pi.Ron.Cu= 39.7 THz).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.554-559
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• 2010

In this paper, we analyzed the frequency spectrum of radiated electromagnetic pulses generated by series arc- and corona- discharges as a basic study to develop an on-line diagnostic technique for power facilities installed inside closed-switchboards. To simulate series arc and corona discharges, five types of electrode system which consists of needle and plane electrodes were arranged. The experiment was carried out in an electromagnetic shielding room, and the measurement system consists of an ultra log antenna and an EMI receiver. From the experimental results, the frequency spectrum exists in ranges from 30 MHz to 2 GHz for a series arc discharge and 30 MHz to 1.2 GHz depending on defects for a corona discharge. The peak frequency of the series arc- and corona- discharges were 100 MHz to 160 MHz and 40 MHz to 80 MHz, respectively.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.5
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• pp.236-240
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• 2004

In this paper we examine the reflection characteristics of dielectric microstrip lines with open-ended termination containing an optically induced plasma region, which are analyzed by the assumption that the plasma is distributed homogeneously in laser illumination. The characteristics impedances resulting from the presence of plasma are evaluated by the transmission line model. To estimate theoretically the characteristic response of identical systems in the time domain, the Fourier transformation method is evaluated. The reflection characteristics of time and frequency response in microwave systems have been calculated using an equivalent circuit model.

• Journal of IKEEE
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• v.11 no.4
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• pp.297-306
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• 2007

A sensor network is composed of a large number of sensor nodes that are densely deployed in a field. Each sensor performs a sensing task for detection specific events. After detecting this event, location information of the sensor node is very important. Range-based scheme of the proposed approaches typically achieve high accuracy on either node-to-node distances or angles, but this scheme have a drawback because all sensor nodes have the special hardware. On the other hand, range-free scheme provides economic advantage because of no needed hardware even if that leads to coarse positioning accuracy. In this paper, we propose a range-free localization algorithm without range information in wireless sensor networks. This is a range-free approach and uses a small number of anchor nodes and known sensor nodes. This paper develops a localization mechanism using the geometry conjecture (perpendicular bisector of a chord). The conjecture states that a perpendicular bisector of a chord passes through the center of the circle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.455-456
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• 2008

In this study, we report that an electrical properties of OLEDs was investigated by the surface etching method of ITO Layer. The electrical properties of OLEDs was measured by IVL and optical properties by EL spectrum. The fundamental structure of OLEDs was ITO anode/TPD(400$\breve{A}$)/$Alq_3(600\breve{A})$/LiF(5$\breve{A}$)/Al(1200$\breve{A}$) cathode. The threshold voltage was low value according to the low resistance of surface. The luminance was increased by decreased surface resistance.