• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.63-66
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• 2005

Several ways for monitoring the soundness of ZnO lightning arresters have been suggested, and all of which are based on the measurement of leakage current since it is well known that the resistive leakage current is a main indicator of arrester deterioration. In this paper, we proposed an algorithm to measure the resistive leakage current, which is quite different from the conventional method that eliminates capacitive current from the total leakage current. The proposed algorithm is based on that the magnitudes of the resistive leakage current are equal at the same applied voltage levels. To confirm the reliability of the algorithm, we fabricated a leakage current detector and designed an analysis program. Experimental results showed that the method does not need a complex circuitry and is useful to analyze the resistive leakage current.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.274-275
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• 2008

탑뷰 기반 주자 지원 시스템 (Top-View Based Parking Assistance System)은 차량의 전자장치 기술과 영상 기반 제어 기술을 융합하여 운전자들의 판단 및 조작 실수로 인한 경제적 손실이나 운전자들의 주차에 대한 중압감을 해소한다. 본 논문에서는 이를 구현하기 위하여 차량의 전, 후 좌, 우 네 위치에 카메라를 장착하였고 각 카메라의 높이 초점 거리, 렌즈의 종류와 지면에 대한 각 등을 공식화하여 영강-지면 좌표 모델을 개발하였다. 이를 바탕으로 추출된 영상을 확대, 축소, 회전, 조합 등의 영상처리를 이용하여 차량의 위에서 내려다보는 것과 같은 영상을 생성하는 알고리즘을 제안하고 VC++을 이용하여 소프트웨어 어플리케이션으로 개발하였다.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.139-142
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• 2013

Silicon nanowire (SiNW) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices were fabricated and their electrical characteristics were analyzed. Compared to planar SONOS devices, these SiNW SONOS devices have good program/erase (P/E) characteristics and a large threshold voltage ($V_T$) shift of 2.5 V in 1ms using a gate pulse of +14 V. The devices also show excellent immunity to short channel effects (SCEs) due to enhanced gate controllability, which becomes more apparent as the nanowire width decreases. This is attributed to the fully depleted mode operation as the nanowire becomes narrower. 3D TCAD simulations of both devices show that the electric field of the junction area is significantly reduced in the SiNW structure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.273-276
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• 2005

This paper presents an electronic ballast using a step down converter, a low frequency inverter for high pressure discharge lamp. The proposed ballast is composed of a full-wave rectifier, a step down converter operated as a current source with power regulation and a low frequency inverter with ignition circuit. The ignition circuit generates high voltage pulse of 1${\sim}$2[kV] peak, 130[Hz]. Moreover, it is able to reignite at regular intervals by protective circuit. As experimental results on the test, lamp voltage, current and consumption power are measured 132.5[V], 7.6[A] and 1,005[W], respectively. It was confirmed that the designed ballast operate the lamp with a constant power.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.277-280
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• 2005

This paper dealt with the development of a surge protection device (SPD) that can protect high speed computer network devices from overvoltages caused by switching operations or lightning surges. The designed SPD is a form of hybrid circuit which is composed of a gas tube having large current diverting capability, high response bi-directional avalanche diodes, and fast recovery diodes to reduce insertion loss on high frequency domain. Surge protection and signal transmission characteristics of the fabricated SPD was tested according to the international standards, IEC 61000-4-5 and IEC 61643-21. From the test results, the SPD is satisfied with the international standards and the high cut-off frequency was 204MHz. Also, the SPD showed a good performance without an insertion loss on a field test of 100Mbps class Local Area Network

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.464-465
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• 2009

A new level shifter using n-channel aluminum-doped zinc tin oxide (AZTO) thin film transistors (TFTs) was proposed to integrate driving circuits on qVGA panels for mobile display applications. The circuit used positive feedback loop to overcome limitations of circuits designed with oxide TFTs which is depletion mode n-channel TFTs. The measured results shows that the proposed circuit shifts 10 V input voltage to 20 V output voltage and its power consumption is 0.46 mW when the supply voltage is 20 V and the operating frequency is 10 kHz.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.51-55
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.60-63
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) and the effect of additive gases in a $Cl_2$-based inductively coupled plasma. The inert gases were argon, nitrogen, and helium. The maximum etch rates were 44.3, 39.9, and 37.9 nm/min for $Cl_2$(75%)/Ar(25%), $Cl_2$(50%)/$N_2$(50%), and $Cl_2$(75%)/He(25%) gas mixtures, 600 W radiofrequency power, 150 W bias power, and 2 Pa process pressure. We obtained the maximum etch rate by a combination of chemical reaction and physical bombardment. A volatile compound of Zn-Cl. achieved the chemical reaction on the surface of the ZnO thin films. The physical etching was performed by inert gas ion bombardment that broke the Zn-O bonds. The highly oriented (002) peak was determined on samples, and the (013) peak of $Zn_2SiO_4$ was observed in the ZnO thin film sample based on x-ray diffraction spectroscopy patterns. In addition, the sample of $Cl_2$/He chemistry showed a high full-width at half-maximum value. The root-mean-square roughness of ZnO thin films decreased to 1.33 nm from 5.88 nm at $Cl_2$(50%)/$N_2$(50%) plasma chemistry.

• Transactions on Electrical and Electronic Materials
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• v.13 no.3
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• pp.157-161
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• 2012

In this study, we investigated the etching characteristics of ITO thin films and the effects of inert gases added to $Cl_2/BCl_3$ inductivity coupled plasma. The maximum etch rate of ITO thin film was 130.0 nm/min upon the addition of Ar (6 sccm) to the $Cl_2/BCl_3$ (4:16 sccm) plasma, which was higher than that with He or $N_2$ added to the plasma. The ion bombardment by $Ar^+$ sputtering was due to the relatively low volatility of the by-products formed in the $Cl_2/BCl_3$ (4:16 sccm) plasma. The surface of the etched ITO thin film was characterized by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). From the XPS results, it is concluded that the proper addition of Ar and He to the $Cl_2/BCl_3$ plasma removes carbon and by-products from the surface of the etched ITO thin film.