• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2287-2290
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• 2003

The electrical characteristics of power devices such as BJT (Bipolar Junction Transistor), and MOSFET (Metal Oxide Field Effect Transistor), etc, are altered due to impinging photon radiation and temperature in the nuclear or the space environment. In this paper, BJT and MOSFET are the two devices subjected to ${\gamma}$ radiation. In the case of BJT, the current gain (${\beta}$) and the collector to Emiter breakdown voltage ($V_{CEO}$) are the two main parameters considered. When it was subjected to ${\gamma}$ rays, the ${\beta}$ decreases as the dose level increases, whereas, $V_{CEO}$ gradually increases as the dose level increases. In the case of MOSFET, the threshold voltage is decreasing as the dose level increases. Here it has been observed the decent rate is an increasing function of the threshold voltage. The on-resistance does not change with respect to the dose. Both the devices recover back the original specification after the annealing is finished. No permanent damage has been occurred.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.123-124
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• 2008

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1M{\Omega}$ to several hundreds of ${\Omega}$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• Transactions of the Korean hydrogen and new energy society
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• v.7 no.1
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• pp.71-79
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• 1996

Yttrium thin film, 580nm thick, was prepared by electron beam evaporation. Film was hydrogenated room temperature upto 40 bar hydrogen pressure, without any activation process. Hydrogen concentration was determined by a quartz-crystal microbalance(QCM) method. YH2.9 sample was made without any pulverization. Electrical resistance was measured by four-point DC method in the temperature range between room temperature and 30K for various hydrogen concentration, x=0 to 2.9 of YHx sample. Temperature dependent resistance of YH2.9 shows low temperature minimum at 105K, the metal-semiconductor transition at 260K, and a hystersis above 210K.

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.207-209
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• 2006

A number of techniques have been developed for estimation of speed or position in motor drives. The accuracy of these techniques is affected by the variation of motor parameters such as the stator resistance, stator inductance or torque constant. This paper is proposed a neural network based estimator for torque and ststor resistance in IPMSM Drives. The neural weights are initially chosen randomly and a model reference algorithm adjusts those weights to give the optimum estimations. The neural network estimator is able to track the varying parameters quite accurately at different speeds with consistent performance. The neural network parameter estimator has been applied to slot and flux linkage torque ripple minimization of the IPMSM. The validity of the proposed parameter estimator is confirmed by the operating characteristics controlled by neural networks control.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1500-1502
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• 1997

We investigated the tracking and erosion resistance of the silicone rubber by Inclined-Plane Method. And, with the variation of the accelerated conditions such as the applied voltage and composition of contaminant, the change of the tracking characteristics according to such conditions was evaluated. The leakage current significantly increases with the increasing voltage, but the weight loss remains almost the same. The voltage above 5.0 kV isn't recommended because tracking breakdown occurs as fast as it does without erosion, and the typical discharge waveform was the form of rectifying wave.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.1374-1376
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• 2000

In this paper, sample coils for stator form-wound winding of traction motor were tested by the accelerative thermal degradation, which composed of heat, vibration, moisture and overvoltage applying. Reliability and expected life were evaluated on the insulation system for 200 class traction motor. After aging of 10 cycles, insulation resistance and PI properties were investigated as diagnosis tests in the range of $20{\sim}160^{\circ}C$. Analysis of polarization properties was performed on the base of do current-time change.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2246-2248
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• 2001

This paper presents a new vector control scheme for induction motor. An exact knowledge of the rotor flux position is essential for a high-performance vector control. The position of the rotor flux is measured in the direct schemes and estimated in the indirect schemes. Since the estimation of the flux position requires a priori knowledge of the induction motor parameters, the indirect schemes are machine parameter dependent. The rotor and stator resistance among the parameters change with temperature. Variations in the parameters of induction machine cause deterioration of both the steady state and dynamic operation of the induction motor drive. Several methods have presented to minimize the consequences of parameter sensitivity in indirect scheme. In this paper, new estimation scheme of rotor flux position is presented to eliminate sensitivity due to variation in the resistance. The simulation is executed to verify the proposed vector control performance and to compare its performance with that of indirect and direct vector control.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1989-1991
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• 1999

This paper presents characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-$(5{\sim}25%)N_2$). The physical and electrical characteristics of these films investigated with the thickness range $3500{\AA}$ of CrN thin films, annealing temperature $(100{\sim}300^{\circ}C)$ and annealing $(24{\sim}72hr)$. The optimized condition of CrN thin-film strain gauges were thickness range of $3500{\AA}$ and annealing condition($300^{\circ}C$, 48 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, ${\rho}=1147.65{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=$-186ppm/^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. And change in resistance after annealing for the CrN thin-films were quitely linear and stable.

• Fire Science and Engineering
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• v.10 no.4
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• pp.3-12
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• 1996

The aim of the present study is to find out the effect of cooling rate on the electrical behavior of ZnO varistors. The microstructure, 1-V characteristics and complex impedance spectra were investigated under the change of cooling rates. It is found that at cooling rate $200^{\circ}$/h, nonlinearity and breakdown voltage reached a maximum value which may show that good intergranular layer is formed as a results of proper cooling rate. Complex Impedance spectras were measured as a function of frequency range 100Hz to 13MHz to determine grain and grainboundary resistance. The semicircles were attributed to the dependence of grain and grainboundary resistance on cooling rates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1080-1086
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• 2003

Effects of E$_2$O$_3$. HO$_2$O$_3$ and Dy$_2$O$_3$ addition on dielectric properties of non-reducible BaTiO$_3$ based X7R dielectrics with Ni electrode have been studied in a reduced atmosphere. As the content of rare-earth with E$_2$O$_3$. HO$_2$O$_3$, Dy$_2$O$_3$ was less than 3wt%, The TCC(Temperature Capacitance Change) and insulation resistance characteristics were improved by compensate the oxygen vacancies due to occupy either the Ba or Ti site. We developed the composition of X7R (EIA standard) for higher capacitance MLCC which had high reliability electric properties by the addition of Er ion into BaTiO$_3$ + MgO + Y2O$_3$ + MnO + (Ba$\sub$0.4/Ca$\sub$0.6/)SiO$_3$ composition.