• Title/Summary/Keyword: Electrical resistance change

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Application of Impedance Spectroscopy to Cement-Based Materials: Hydration of Calcium Phosphate Bone Cements

  • Kim, Sung-Moon;Hwang, Jin-Ha
    • Journal of the Korean Ceramic Society
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    • v.43 no.3 s.286
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    • pp.156-161
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    • 2006
  • Impedance spectroscopy was applied to the initial hydration of calcium phosphate bone cements in order to investigate the electrical/dielectric properties. Hydration or equivalently setting was monitored as a function of the amount of water and initial powder characteristics. Higher amounts of water produced more open microstructures, leading to higher conductivity and enhanced dielectric constant. The effects of the initial characteristics in the powder were investigated using bone cement powder prepared with and without granulation. Granulated powder exhibited a significant change in resistance and produced a higher dielectric constant than those of conventional powder. Through a simplified modeling, the effects of thickness in reaction products and pore sizes were estimated by the frequency-dependent impedance measurements. Furthermore, impedance spectroscopy was proven to be a highly reliable tool for evaluating the continuous change in pore structure occurring in calcium phosphate bone cements.

Optical Transmission Characteristics of Tellurium-based Phase-change Chalcogenide Thin Films (Tellurium계 상변화 칼코겐화물 박막의 광투과 특성)

  • Yoon, Hoi Jin;Bang, Ki Su;Lee, Seung-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.7
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    • pp.408-413
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    • 2016
  • The dielectric thin films applied to multi-colored semitransparent thin film solar cells have been extensively studied. In this work, we prepared GeSbTe and GeTe chalcogenide thin films using magnetron sputtering, and investigated their optical and phase-change properties to replace the dielectric films. The changes of surface morphology, sheet resistance, and X-ray diffraction of the Te-based chalcogenide films support the fact that the amorphous stability of GeTe films is superior to that of GeSbTe films. While both amorphous GeSbTe and GeTe films thinner than 30 nm have optical transparency between 5% and 60%, GeTe films transmit more visible light than GeSbTe films. It is confirmed by computer simulation that the color of semitransparent silicon thin film solar cells can be adjusted with the addition of GeSbTe or GeTe films. Since it is possible to adjust the contrast of the solar cells by exploiting the phase-change property, the two kinds of chalcogenide films are anticipated to be used as an optical layer in semitransparent solar cells.

The improvement of electrical properties of InGaZnO (IGZO)4(IGZO) TFT by treating post-annealing process in different temperatures.

  • Kim, Soon-Jae;Lee, Hoo-Jeong;Yoo, Hee-Jun;Park, Gum-Hee;Kim, Tae-Wook;Roh, Yong-Han
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.169-169
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    • 2010
  • As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

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Analysis of Grounding Resistance and Soil Resistivity Using Mock-up System in Jeju Soil (제주토양 목업시스템을 사용한 접지저항 및 대지저항률 분석)

  • Boo, Chang-Jin;Ko, Bong-Woon;Kim, Jeong-Hyuk;Oh, Seong-Bo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.8
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    • pp.536-543
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    • 2016
  • The installation of grounding systems is important for the safe operation of power systems, and the soil resistivity is an important design consideration for such systems. It varies markedly with the soil type, moisture content and temperature. The Jeju geological structure is formed in a multi-layered structure characteristic of volcanic areas and, and the geological ground resistance values can appear even constructed the same areas ground system different from the soil structure. In this study, a mock-up system using representative soil from Jeju was constructed to analyze the variation of the grounding resistance. The mock-up system was configured using the Gauss-Newton algorithm inversion method to analyze the model numerically using the Wenner method through the soil resistivity measurements used to create the ground model. Also, we analyzed the change in the general ground resistance characteristics of the copper rod, copper pipe, and carbon rod that are used for grounding. The variation of the grounding resistance with the hydration status was found to be $2.9[{\Omega}]$, $16.5[{\Omega}]$ and $20.1[{\Omega}]$ for the copper rod, copper pipes, and carbon rod, respectively, and the influence of the ground moisture resistance of the carbon rod was found to be the lowest with a value of $141[{\Omega}]$.

A Study on the Improved Load Sharing rate in Paralleled Operated Lead Acid Battery by Using Microprocessor (마이크로 프로세서를 이용한 축전지의 병렬 운전 부하분담률 개선에 관한 연구)

  • 이정민
    • Proceedings of the KIPE Conference
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    • 2000.07a
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    • pp.493-497
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    • 2000
  • A battery is the device that transforms the chemical energy into the direct-current electrical energy without a mechanical process. Unit cells are connected in series to obtain the required voltage while being connected in parallel to organize capacity for load current. Because the voltage drop down in one set of battery is faster than in two one it may result in the low efficiency of power converter with the voltage drop and cause the system shutdown. However when the system being shutdown. However when the system being driven in parallel a circular-current can be generated,. It is shown that as a result the new batteries are heated by over-charge and over-discharge and the over charge current increases rust of the positive grid and consequently shortens the lifetime of the new batteries. The difference between the new batteries and old ones is the amount of internal resistance. In this paper we can detect the unbalance current using the microprocessor and achieve the balance current by adjusting resistance of each set, The internal resistance of each set becomes constant and the current of charge and discharge comes to be balanced by inserting the external resistance into the system and calculating the change of internal resistance.

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Study on Current Limiting Characteristics of YBCO Thin-Film Wire with Insulation Layer

  • Doo, Seung-Gyu;Du, Ho-Ik;Jeon, An-Gyoon
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.1
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    • pp.20-23
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    • 2013
  • When applying superconducting wire to power machines, an investigation needs to be carried out on the characteristics of wire phase changes in connection with the insulating layer. This study examined trends in the increase of the wire's resistance and the characteristics of its recovery from quenching by a current-applied cycle at temperatures of 90 K, 180 K, and 250 K. The procedure was conducted based on the thickness and presence (or absence) of the insulating wire layers. To achieve this, YBCO thin-film wires with the same critical temperatures were prepared with copper and stainless steel stabilizing layers. At levels (-one, three, and five-), with superior performance, polyimide pressure-sensitive adhesive tape was attached to the wires at a very low temperature. The eight prepared test samples were wound around the linear frames. The wire's voltage and current created from the phase change characteristics were measured at the wire's prescribed temperature, using the four-point probe method. The wire's resistance and recovery characteristics were examined for each cycle at temperatures of 90 K, 180 K, and 250 K.

A Study on the Phase Change Characteristics of Si-doped Ge2Sb2Te5 Thin Films for PRAM (PRAM을 위한 Si-doped Ge2Sb2Te5 박막의 상변화 특성 연구)

  • Baek, Seung-Cheol;Song, Ki-Ho;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.4
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    • pp.261-266
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    • 2010
  • In this paper, we report the changes of electrical, structural and optical characteristics in $Ge_2Sb_2Te_5$ thin films according to an increase of Si content. The Si-doped $Ge_2Sb_2Te_5$ thin films were prepared by rf-magnetron co-sputtering method. Isothermal annealing was carried out at $N_2$ atmosphere. The crystallization speed (v) of amorphous thin films was evaluated by detecting the reflection response signals using a nano-pulse scanner (wavelength = 658 nm) with illumination power of 1~17 mW and pulse duration of 10~460 ns. Structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of 300~3000 nm using UV-vis-NIR spectrophotometer. The sheet resistance (RS) of the thin films was measured using 4 point probe. Conclusivlely, the v-value decreased with an increase of Si content, while the RS-values of both crystalline and amorphous phases were increased. In particular, fcc-to-hexagonal transition was suppressed by the added Si atoms.

Neutron irradiation impact on structural and electrical properties of polycrystalline Al2O3

  • Sunil Kumar;Sejal Shah;S. Vala;M. Abhangi;A. Chakraborty
    • Nuclear Engineering and Technology
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    • v.56 no.2
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    • pp.402-409
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    • 2024
  • High energy neutron irradiations impact on structural and electrical properties of alumina are studied with particular emphasis on real time in-situ radiation induced conductivity measurement in low flux region. Polycrystalline Al2O3 samples are subjected to high energy neutrons produced from D-T neutron generator and Am-Be neutron source. 14 MeV neutrons from D-T generator are chosen to study the role of fast neutron irradiation in the structural modification of samples. Real time in-situ electrical measurement is performed to investigate the change in insulation resistance of Al2O3 due to radiation induced conductivity at low flux regime. During neutron irradiation, a significant transient decrease in insulation resistance is observed which recovers relative higher value just after neutron exposure is switched off. XRD results of 14 MeV neutron irradiated samples suggest annealing effect. Impact of relatively low energy neutrons on the structural properties is also studied using Am-Be neutrons. In this case, clustering is observed on the sample surface after prolonged neutron exposure. The structural characterizations of pristine and irradiated Al2O3 samples are performed using XRD, SEM, and EDX. The results from these characterizations are analysed and interpreted in the manuscript.

Characteristics of SiO2 Based Asymmetric Multilayer Thin Films for High Performance Flexible Transparent Electrodes (고성능 유연 투명전극용 SiO2 기반 비대칭 다층 박막의 특성)

  • Jeong, Ji-Won;Kong, Heon;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.1
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    • pp.25-30
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    • 2020
  • Oxide (SiO2)/Metal(Ag)/Oxide(SiO2, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO2 (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10-3 Ω-1.

Electrical signal characteristics of conductive asphalt concrete in the process of fatigue cracking

  • Yang, Qun;Li, Xu;Wang, Ping;Zhang, Hong-Wei
    • Smart Structures and Systems
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    • v.14 no.3
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    • pp.469-477
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    • 2014
  • As a kind of intelligent materials, conductive asphalt concrete has a broad application prospect including melting ice and snow on the pavement, closing cracks in asphalt concrete, sensing pavement damage, and so on. Conductive pavement will be suffered from fatigue failure as conventional pavement in the process of service, and this fatigue damage of internal structure can be induced by electrical signal output. The characteristics of electrical signal variation of conductive asphalt concrete in the process of fatigue cracking were researched in this paper. The whole process was clearly divided into three stages according to resistance changes, and the development of fatigue damage wasn't obvious in stage I and stage II, while in stage III, the synchronicity between the resistance and damage began to appear. Thus, fatigue damage variable D and initial damage value $D_0$ represented by the functions of resistance were introduced in stage III. After calculating the initial damage value $D_0$ under different stress levels, it was concluded that the initial damage value $D_0$ had no noticeable change, just ranged between 0.24 and 0.25. This value represented a critical point which could be used to inform the repair time of early fatigue damage in the conductive asphalt pavement.