• Title/Summary/Keyword: Electrical resistance change

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Effect of Annealing Temperature on Phase-change Characteristics of GeSbTe-based Bilayers (GeSbTe계 이중층의 상변화 특성에 미치는 열처리 온도 효과)

  • Yoon, Hoi Jin;Bang, Ki Su;Lee, Seung-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.2
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    • pp.86-90
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    • 2017
  • This work reports the phase-change behavior and thermal stability of doped GeSbTe/GeSbTe bilayers. We prepared the bilayers using RF sputtering, and annealed them at annealing temperature ranging from $100^{\circ}C$ to $400^{\circ}C$. The sheet resistance of the bilayer decreased and saturated with increasing annealing temperature, and the saturated value was close to that of pure GeSbTe film. The surface of the bilayer roughened at $400^{\circ}C$, which corresponds to the surface roughening of doped GeSbTe film. Mixed phases of face-centered cubic and hexagonal close-packed crystalline structures were identified in the bilayers annealed at elevated temperature. These results indicate that the phase-change behavior of the bilayer depends on the concurrent phase-transitions of the two GeSbTe-based films. The dopants in the doped GeSbTe film were diffused out at annealing temperatures of $300^{\circ}C$ or higher, which implies that the thermal stability of the bilayer should be considered for its application in phase-change electronic devices.

A Study on the Electrical Properties of MIM Structures Based on Ge2Sb2Te5 and Ge8Sb2Te11 Thin Films for ReRAM (ReRAM응용을 위한 Ge2Sb2Te5와 Ge8Sb2Te11 기반 MIM구조 박막의 전기적 특성 연구)

  • Jang, Hwi-Jong;Kong, Heon;Yeo, Jong-Bin;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.3
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    • pp.144-147
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    • 2017
  • In this study, $Ge_2Sb_2Te_5$ and $Ge_8Sb_2Te_{11}$ were used as an insulator layer to fabricate ReRAM devices. The resistance change is correlated to the appearance or disappearance of a conductivity filament at the surface of the GeSbTe layer. Changes in the electrical properties of ITO/GeSbTe/Ag devices were measured using a I-V-L measurement system. As a result, compared to the $ITO/Ge_8Sb_2Te_{11}/Ag$ device, this $ITO/Ge_2Sb_2Te_5/Ag$ ReRAM device exhibits highly uniform bipolar resistive switching characteristics, such as the operating voltages, and the resistance values.

Effect of Adhesion Strength Between Flexible Substrates and Electrodes on the Durability of Electrodes (유연 기판과 전극 사이의 접합력이 전극의 내구성에 미치는 영향)

  • Doyeon Im;Byoung-Joon Kim;Geon Hwee Kim;Taechang An
    • Journal of Sensor Science and Technology
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    • v.33 no.2
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    • pp.86-92
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    • 2024
  • Flexible electronic devices are exposed to repeated mechanical deformation; therefore, electrode performance is an important element. Recently, a new technology has been developed to improve the adhesion strength between polymer substrates and metal thin films through the cross-linking reaction of bovine serum albumin (BSA) bioconjugation proteins; however, additional performance evaluation as an electrode is necessary. Therefore, in this study, we investigated the effect of adhesive strength between a flexible substrate and a metal thin film on the performance of a flexible electrode. Cracks and changes in the electrical resistance of the electrode surface were observed through outer bending fatigue tests and tensile tests. As a result of a bending fatigue test of 50,000 cycles and a tensile test at 10% strain, the change in the electrical resistance of the flexible electrode with a high adhesion strength was less than 40%, and only a few microcracks were formed on the surface; thus, the electrical performance did not significantly deteriorate. Through this study, the relationship between the adhesion strength and electrical performance was identified. This study will provide useful information for analyzing the performance of flexible electrodes in the commercialization of flexible electronic devices in the future.

Unbalanced Characteristics of the Superconducting Fault Current Limiters with a Single Line-to-ground Fault (1선 지락사고에 대한 초전도한류기의 불평형 특성)

  • Choi, Hyo-Sang;Lee, Na-Young;Lee, Sang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.9
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    • pp.851-855
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    • 2005
  • We investigated the unbalanced characteristics of the superconducting fault current limiters (SFCLs) based on YBCO thin films with a single line-to-ground fault. When a single line-to-ground fault occurred, the short circuit current of a fault phase increased about 6 times of transport currents after the fault onset but was effectively limited to the designed current level within 2 ms by the resistance development of the SFCL. The fault currents of the sound phases almost did not change because of their direct grounding system. The unbalanced rates of a fault phase were distributed from 6.4 to 1.4. It was found that the unbalanced rates of currents were noticeably improved within one cycle after the fault onset. We calculated the zero phase currents for a single line-to-ground fault using the balanced component analysis. The positive sequence resistance was reduced remarkably right after the fault onset but eventually approached the balanced positive resistance component prior to the system fault. This means that the system reaches almost the three-phase balanced state in about 60 ms after the fault onset at the three-phase system.

The Effect of the Sn contents on Rapidly Solidified Ag-X%Zn Electric Contact Materials (급속응고한 Ag-X%Zn계 전기접점재료에 미치는 Sn함량의 영향)

  • Kim, Jong-Kyu;Jang, Dae-Jung;Ju, Kwang-Il;Lee, Eun-Ho;Um, Seung-Yeul;Nam, Tae-Woon
    • Journal of Korea Foundry Society
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    • v.28 no.4
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    • pp.184-189
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    • 2008
  • Ag-Cd alloy has been widely used as an electrical contact material, since Ag-Cd alloy has a good wear resistance and stable contact resistance. But nowadays Ag-Cd alloy is not considered as electrical contact material any more due to detrimental effect on environments. Currently, active researches are being performed on ($Ag-SnO_2$ and $Ag-SnO_{2}-In_{2}O_{3}$) as an alternative solution which can fix the remaining environmental problems. However, $In_{2}O_{3}$ is relatively expensive and Ag-Sn alloy has low wear resistance. Our recent research results show that Ag-X%Zn-Y%Sn has similar physical and chemical properties. In the present study, so we tried to change and to optimize the Zn oxide content to over 6 wt% and Sn oxide content with 0.5, 1.0, 1.5 wt%. Results obtained from the experiments on the Ag-X%ZnO-Y%$SnO_2$ are discussed.

Detection of Delamination Crack for Polymer Matrix Composites with Carbon Fiber by Electric Potential Method

  • Shin, Soon-Gi
    • Korean Journal of Materials Research
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    • v.23 no.2
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    • pp.149-153
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    • 2013
  • Delamination crack detection is very important for improving the structural reliability of laminated composite structures. This requires real-time delamination detection technologies. For composite laminates that are reinforced with carbon fiber, an electrical potential method uses carbon fiber for reinforcements and sensors at the same time. The use of carbon fiber for sensors does not need to consider the strength reduction of smart structures induced by imbedding sensors into the structures. With carbon fiber reinforced (CF/) epoxy matrix composites, it had been proved that the delamination crack was detected experimentally. In the present study, therefore, similar experiments were conducted to prove the applicability of the method for delamination crack detection of CF/polyetherethereketone matrix composite laminates. Mode I and mode II delamination tests with artificial cracks were conducted, and three point bending tests without artificial cracks were conducted. This study experimentally proves the applicability of the method for detection of delamination cracks. CF/polyetherethereketone material has strong electric resistance anisotropy. For CF/polyetherethereketone matrix composites, a carbon fiber network is constructed, and the network is broken by propagation of delamination cracks. This causes a change in the electric resistance of CF/polyetherethereketone matrix composites. Using three point bending specimens, delamination cracks generated without artificial initial cracks is proved to be detectable using the electric potential method: This method successfully detected delamination cracks.

Strain-Sensing Characteristics of Multi-Walled Carbon Nanotube Sheet

  • Jung, Daewoong;Lee, Gil S.
    • Journal of Sensor Science and Technology
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    • v.22 no.5
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    • pp.315-320
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    • 2013
  • In this paper, the properties of strain sensors made of spin-capable multi-walled carbon nanotubes (MWCNTs) were characterized and their sensing mechanisms analyzed. The key contribution of this paper is a new fabrication technique that introduces a simpler transfer method compared to spin-coating or dispersion CNT. Resistance of the MWCNT sheet strain sensor increased linearly with higher strain. To investigate the effect of CNT concentration on sensitivity, two strain sensors with different layer numbers of MWCNT sheets (one and three layers) were fabricated. According to the results, the sensor with a three-layer sheet showed higher sensitivity than that with one layer. In addition, experiments were conducted to examine the effects of environmental factors, temperature, and gas on sensor sensitivity. An increase in temperature resulted in a reduction in sensor sensitivity. It was also observed that ambient gas influenced the properties of the MWCNT sheet due to charge transfer. Experimental results showed that there was a linear change in resistance in response to strain, and the resistance of the sensor fully recovered to its unstressed state and exhibited stable electromechanical properties.

Operating properties of resistive type superconducting fault current limiters with a single line-to-ground fault (1선지락사고에 대한 초전도한류기의 동작특성)

  • Park, Hyo-Sang;Park, Chang-Joo;Lee, Sang-il;Chung, Soo-Bok;Oh, Geum-Kon;Chung, Hun-Sang
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2003.11a
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    • pp.279-281
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    • 2003
  • We analysed the operating properties of resistive type superconducting fault current limiters (SFCLs) based on YBCO thin films with a single line-to-ground fault. When a single line-to-ground fault occurred, the short circuit current of a fault phase increased up to about 6 times of transport currents immediately after the fault instant and was effectively limited to the designed current level within 2 ms by the resistance development of the SFCL. The fault currents of the sound phases almost did not change because of their direct grounding system. The unsymmetrical rates of a fault phase were distributed from 6.4 to 1.4. It was found that the unsymmetrical rates of currents were noticeably improved within one cycle after the fault instant. We calculated the zero phase currents for a single line-to-ground fault using the symmetrical component analysis. The positive sequence resistance was reduced remarkably right after the fault but eventually approached the balanced positive resistance component prior to the system fault. This means that the system reaches almost the three-phase symmetrical state in about 60 ㎳ after the fault. The ground currents were almost 3 times of the zero phase mts since most of the fault currents flowed through the grounding line.

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Structural and temperature coefficient of resistance characteristics of colossal magnetoresistance Mn oxides prepared by RF sputtering

  • Choi, Sun-Gyu;Ha, Tae-Jung;Reddy, A.Sivasankar;Yu, Byoung-Gon;Park, Hyung-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.361-361
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    • 2007
  • A lot of efforts have been paid to develop infrared imaging systems in last decades. Bolometer has a wide range of applications from military to commercial, such as military night vision, medical imaging system and so on. Bolometer is a resistive sensor that detects temperature changes through resistance change. To improve detecting ability, bolometer should have a good resistive film which has high temperature coefficient of resistance (TCR) value. Colossal magnetoresistance (CMR) $L_{1-x}A_xMnO_3$ (where L and A are trivalent rare-earth ions and divalent alkaline earth ions, respectively.) are received attention to apply bolometer resistive film because it has a high TCR property which was discovered in the metal to semiconductor phase transition temperature region. In this work, CMR films were deposited on various substrates in relative low substrate temperature by RF magnetron sputtering. The influence of deposition parameters such as substrate temperature, gas partial pressure, and so on have been studied. The structural and TCR properties of the films were also investigated for applying to microbolometer.

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Flexible Hydrogen Sensor Using Ni-Zr Alloy Thin Film

  • Yun, Deok-Whan;Park, Sung Bum;Park, Yong-il
    • Korean Journal of Materials Research
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    • v.29 no.5
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    • pp.297-303
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    • 2019
  • A triple-layered $PMMA/Ni_{64}Zr_{36}/PDMS$ hydrogen gas sensor using hydrogen permeable alloy and flexible polymer layers is fabricated through spin coating and DC-magnetron sputtering. PDMS(polydimethylsiloxane) is used as a flexible substrate and PMMA(polymethylmethacrylate) thin film is deposited onto the $Ni_{64}Zr_{36}$ alloy layer to give a high hydrogen-selectivity to the sensor. The measured hydrogen sensing ability and response time of the fabricated sensor at high hydrogen concentration of 99.9 % show a 20 % change in electrical resistance, which is superior to conventional Pd-based hydrogen sensors, which are difficult to use in high hydrogen concentration environments. At a hydrogen concentration of 5 %, the resistance of electricity is about 1.4 %, which is an electrical resistance similar to that of the $Pd_{77}Ag_{23}$ sensor. Despite using low cost $Ni_{64}Zr_{36}$ alloy as the main sensing element, performance similar to that of existing Pd sensors is obtained in a highly concentrated hydrogen atmosphere. By improving the sensitivity of the hydrogen detection through optimization including of the thickness of each layer and the composition of Ni-Zr alloy thin film, the proposed Ni-Zr-based hydrogen sensor can replace Pd-based hydrogen sensors.