• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.1
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• pp.71-76
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• 2006

The electrical characteristics of concrete block including a reinforcing rod in the foundation of the housing was fundamentally reviewed. It was tried to apply the substitutional earthing electrode in the foundation of the building. In order to identify the difference in the earthing resistance between mortar block and concrete block model, those models including a reinforcing rod in their inside were prepared and investigated for the earthing resistance. In results, the earthing resistance was largely affected by the block's resistivity compared to the change of resistance in reinforcing rods and the ground resistivity.

• Journal of Pharmaceutical Investigation
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• v.24 no.3
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• pp.41-47
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• 1994

The effect of Azone and ethanol on the electrical properties of human and hairless mouse skin was studied and the results were compared. The complex electrical impedance was measured as a function of frequency, and resistance and capacitance were determined from Nyquist plot. After the treatment of human-heat separated epidermis with Azone, contrary to the expectation, resistance increased about 60% and it did not change with time. Capacitance also increased; immediately after the treatment, it was about 110% of pretreatment value and it increased further with time. On the other hand, when hairless mouse skin was treated with Azone, marked changes occured; resistance fell almost to the value of bathing medium itself and capacitance increased to about 200% of its pretreatment value. Similar result were obtained when hairless mouse skin was treated with 100% ethanol. The results suggest that there are differences in the strength of barrier properties of stratum corneum (SC) between human and hairless mouse skin. Overall, the results provide further mechanistic insight into ion conduction through the skin and into the role of SC lipids in skin capacitance.

• 전기의세계
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• v.22 no.4
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• pp.7-10
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• 1973

The characteristics of all the instruments and materials used in atomic industry is changed due to radiation damages by the effects of radiation activities. In this study, when the Carbon Resistor, main element of electrical circuits, is irradiated by Gamma-Ray, variations in its electrical properties have been investigated. The following results are obtained: 1) The resistance value in Carbon Resistor is exponentially increased as the quantity of irradiation by Gamma-Ray is increased, but in case of more than 10$^{6}$ R/hr. of quantity of irradiation it has saturated-state value. 2) The rate of change inrestistance value has been independent on the intensity of Gamma-Ray source when Carbon Resistor is irradiated in the same quantity of irradiation. 3) The resistance value in irradiated Carbon Resistor has not been varied with elapse of time. 4) The more the distance from the Carbon Resistor to the Gamma-Ray source the more greatly the resistance value is decreased and that it has been shown that the more quantity of irradiation by Gamma-Ray, the greater the rate of decrease in resistance value. Through the above results it has been concluded that the measurement values obtained by the high-precision instruments in the radiation field have to be corrected with proper consideration to radiation damages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.427-430
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• 2002

This paper presents on contamination performance of polymeric outdoor insulator with different contaminant accumulation. The ESDD (equivalent salt deposit density), tracking resistance and clean-fog test were performed to investigate the characteristics of contamination performance on polymeric outdoor insulator. Furthermore, we evaluated together with the porcelain samples for its comparison. It is found that ESDD of polymeric and porcelain insulator depends on the installation position. This surface accumulation of contaminant lead to the loss of surface hydrophobicity, expecially upper shed part of polymeric insulator. In addition, the effect of an artificial contaminant on the tracking resistance by inclined-plane method and leakage suppression ability under clean fog was surveyed. The time of tracking failure did not appear to change significantly with a much contaminant accumulation, while leakage current under clean-fog increased.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.11-16
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• 1998

In this paper, simultaneous estimation of rotor speed and time constant for a voltage source inverter (VSI) fed induction motor drive are disccussed. The theory is based on the Model Reference Adaptive System (MRAS). The identifier executes Simultaneous rotor speed and time constant so that vector control of the induction may be achieved in the rotor-flux oriented reference frame. Furthermore, to eliminate the offset error caused by the change in the stator resistance, a fuzzy resistance regulator is also designed which operates in parallel with the rotor speed and time constant identifier

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.382-385
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• 2009

In this study, we studied switching characteristics of germanium selenide(Ge-Se)/silver(Ag) contact formed by photodoping for use in programmable metallization cell devices. We have been investigated the switching characteristics of Ag-doped chalcogenide thin films. Changed resistance range by direction of applied voltage is about $1\;M{\Omega}$ $\sim$ hundreds of $\Omega$. The cause of these resistance change can be thought the same phenomenon such as resistance variation of PMC-RAM. The results imply that the separated Ag-ions react the atoms or defects in chalcogenide thin films.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.52 no.12
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• pp.713-721
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• 2003

This paper analyzes the switching overvoltage occurred on 345kV underground power cable system as well as combined transmission system using EMTP. Cable length and closing time, preinsertion resistance have effect on switching overvoltage. Therefore, this paper analyzes the switching overvoltage occurred on conductor and sheath with change of those parameters. Specially, the cross bonding position becomes discontinuity point because of the difference between surge impedance of metal sheath and that of lead cable. Thus, the transmission and the reflection of traveling wave complexly occur at this connection point. According to these influences, voltage between sheath and earth as well as voltage between joint boxes rise. Time to crest point of switching overvoltage is longer than lightning overvoltage. Even though the voltage induced by switching surge is smaller than lightning surge, that voltage may have serious effect on the metal sheath. Therefore, this paper also analyses the reduction effect of switching overvoltage when the preinsertion resistance of circuit breaker is considered.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.626-632
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• 1995

In this paper, The effect of the impedances in SNOSFET's memory devices has been developed. The effect of source and drain impedances measured by means of two bias resistances - field effect bias resistance by inner region, external bias resistance. The effect of the impedances by source and drain resistance shows the dependence of the function of voltages applied to the gate. It shows the differences of change in source drain voltage by means of low conductance state and high conductance state. It shows the delay of threshold voltages. The delay time of low conductance state and high conductance state by the impedances effect shows 3[.mu.sec] and 1[.mu.sec] respectively.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.6
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• pp.9-14
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• 2011

We have investigated the electrical properties of $AlO_x$ thin film device. The device has been fabricated top-bottom electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of $AlO_x$ thin film device. Fabricated $AlO_x$ thin film device with MIM structure is changed from a high conductive On-state to a low conductive Off-state by the external linear voltage sweep. It is found that the initial resistance of the $AlO_x$ thin film is low-resistance On state and reversible switching occurs. Consequently, we believe $AlO_x$ thin film is a promising material for a next-generation nonvolatile memory and other electrical applications.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.243-249
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• 1999

A magnetic field sensor is fabricated with superconducting ceramics of Y-Ba-Cu-O system. The prepared material shows the superconductivity at about 95K. The sensor at liquid nitrogen temperature shows the increase in electrical resistance by applying magnetic field. Actually, the voltage drop across the sensor is changed from zero to a value. more than $100{\mu}V$ by the applied magnetic field. The change in electrical resistance depends on magnetic field. The sensitivity of this sensor is 2.9 ohm/T. The sensing limit is about $1.5{\times}10^{-5}T(=1.5{\times}10^{-1}G)$. The increase in electrical resistance by the magnetic field is ascribed to a modification of the Josephson junctions due to the penetrating magnetic flux into the superconducting material.