• Advances in nano research
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• 제5권3호
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• pp.231-244
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• 2017

Graphene oxide (GO) was prepared by modified Hummer's method to produce reduced graphene oxide (RGO) following standard thermal and chemical reduction processes. Prepared RGO colloids were utilized to fabricate RGO films over glass and FTO coated glass substrates through drop-coating. A systematic study was performed to evaluate the effect of reduction degree on the optical and electrical properties of the RGO film. We demonstrate that both the reduction process (thermal and chemical) produce RGO films of similar optical and electrical behaviors. However, the RGO films fabricated using chemically reduced GO colloid render better performance in dye sensitized solar cells (DSSCs), when they are used as counter electrodes (CEs). It has been demonstrated that RGO films of optimum thicknesses fabricated using RGO colloids prepared using lower concentration of hydrazine reducer have better catalytic performance in DSSCs due to a better catalytic interaction with redox couple. The better catalytic performance of the RGO films fabricated at optimal hydrazine concentration is associated to their higher available surface area and lower grain boundaries.

• Carbon letters
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• 제25권
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• pp.1-13
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• 2018

Gold functionalized graphene oxide (GOAu) nanoparticles were reinforced in acrylonitrile-butadiene rubbers (NBR) via solution and melt mixing methods. The synthesized NBR-GOAu nanocomposites have shown significant improvements in their rate of curing, mechanical strength, thermal stability and electrical properties. The homogeneous dispersion of GOAu nanoparticles in NBR has been considered responsible for the enhanced thermal conductivity, thermal stability, and mechanical properties of NBR nanocomposites. In addition, the NBR-GOAu nanocomposites were able to show a decreasing trend in their dielectric constant (${\varepsilon}^{\prime}$) and electrical resistance on straining within a range of 10-70%. The decreasing trend in ${\varepsilon}^{\prime}$ is attributed to the decrease in electrode and interfacial polarization on straining the nanocomposites. The decreasing trend in electrical resistance in the nanocomposites is likely due to the attachment of Au nanoparticles to the surface of GO sheets which act as electrical interconnects. The Au nanoparticles have been proposed to function as ball rollers in-between GO nanosheets to improve their sliding on each other and to improve contacts with neighboring GO nanosheets, especially on straining the nanocomposites. The NBR-GOAu nanocomposites have exhibited piezoelectric gauge factor (${GF_{\varepsilon}}^{\prime}$) of ~0.5, and piezo-resistive gauge factor ($GF_R$) of ~0.9 which clearly indicated that GOAu reinforced NBR nanocomposites are potentially useful in fabrication of structural, high temperature responsive, and stretchable strain-sensitive sensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• 한국재료학회지
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• 제31권5호
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• pp.278-285
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• 2021

This study produces electroconductive polycaprolactone (PCL)-based film with different amounts of graphene (G) through electrospinning, and the characteristics of the produced G/PCL composites are investigated. The G/PCL results are analyzed by comparing them with those obtained using pure PCL electrospun film as a control. The morphology of electrospun material is analyzed through scanning electron microscopy and transmission electron microscopy. Mechanical and electrical properties are also evaluated. Composites containing 1 % graphene have the highest elongation rate, and 5 % samples have the highest strength and elasticity. Graphene contents > 25 % show electro-conductivity, which level improves with increase of graphene content. Biological characteristics of G/PCL composites are assessed through behavioral analysis of neural cell attachment and proliferation. Cell experiments reveal that compositions < 50 % show slightly reduced cell viability. Moreover, graphene combinations facilitated cell proliferation compared to pure PCL. These results confirm that a 25 % G/PCL composition is best for application to systems that introduce external stimuli such as electric fields and electrodes to lead to synergistic efficiency of tissue regeneration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.208-208
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• 2013

Graphene has emerged as a fascinating material for next-generation nanoelectronics due to its outstanding electronic properties. In particular, graphene-based field effect transistors (GFETs) have been a promising research subject due to their superior response times, which are due to extremely high electron mobility at room temperature. The biggest challenges in GFET applications are control of carrier concentration and opening the bandgap of graphene. To overcome these problems, three approaches to doping graphene have been developed. Here we demonstrate the decoration of Ni nanoparticles (NPs) on graphene films by simple annealing for p-type doping of graphene. Ni NPs/graphene films were fabricated by coating a $NiCl2{\cdot}6H2O$ solution onto graphene followedby annealing. Scanning electron microscopy and atomic force microscopy revealed that high-density, uniformly sized Ni NPs were formed on the graphene films and the density of the Ni NPs increased gradually with increasing $NiCl2{\cdot}6H2O$ concentration. The formation of Ni NPs on graphene films was explained by heat-driven dechlorination and subsequent particlization, as investigated by X-ray photoelectron spectroscopy. The doping effect of Ni NPs onto graphene films was verified by Raman spectroscopy and electrical transport measurements.

• 한국의류산업학회지
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• 제24권1호
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• pp.138-145
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• 2022

Today, graphene loaded textiles are being considered promising smart clothing due to their high conductivity. In this study, we reported reduced graphene oxide(r-GO) deposited pure cotton fabrics fabricated with a colloidal solution of graphene(GO), using a one-step aerosol spray pyrolysis(ASP) process and their potential application on smart textiles. The ASP process is advantageous in that it is easily implementable and can be applied for continuous processing. Moreover, this process has never been applied to deposit r-GO on pure cotton fabric. The field emission-scanning microscopy (FE-SEM) observation, Fourier transform-infrared(FT-IR) analysis, Raman spectroscopy, X-ray diffraction(XRD) analysis, and ultraviolet transmittance(UVT) were used to evaluate material properties of the r-GO colloids. The resistance was also measured to evaluate the electrical conductivity of the specimens. The results revealed that the r-GO was successfully deposed on specimens, and the specimen with the highest electrical conductivity demonstrated an electrical resistance value of 2.27 kΩ/sq. Taken together, the results revealed that the ASP method demonstrated a high potential for effective deposition of r-GO on cotton fabric specimens and is a prospect for the development of conductive cotton-based smart clothing. Therefore, this study is also meaningful in that the ASP process can be newly applied by depositing r-GO on the pure cotton fabric.

• 전기화학회지
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• 제14권4호
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• pp.239-244
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• 2011

본 연구에서는 에틸렌글리콜을 사용한 polyol reduction 방법으로 나노크기의 $Fe_3O_4$와 CuO가 각각 그래핀에 분산된 $Fe_3O_4$/graphene, CuO/graphene 복합체를 합성하였으며, 이를 리튬이차전지의 음극활물질로 사용한 전극의 성능을 평가하였다. 합성된 복합체의 물리적 특성은 SEM, XRD, TGA 등으로 분석하였으며, 반쪽전지를 제조하여 충/방전, cyclic voltammetry, 교류 임피던스 등의 전기화학적 특성평가를 수행하였다. 그래핀 표면에 분산된 금속산화물 나노입자들에 의한 용량증가 및 전기적 네트워크 향상 등의 효과로 $Fe_3O_4$/graphene 및 CuO/graphene 복합체의 전극성능이 그래핀 전극보다 우수하였다. 복합체의 경우 30회 충/방전 후에도 600 mAh/g 용량을 유지하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.130.2-130.2
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• 2013

Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.

• Carbon letters
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• 제26권
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• pp.81-87
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• 2018

Morphological differences in multi-layered graphene flakes or graphene nanoplatelets prepared by oxidative (rGO-NP, reduced graphene oxide-nanoplatelets) and non-oxidative (GIC-NP, graphite intercalation compound-nanoplatelets) routes were investigated with various analytical methods. Both types of NPs have similar specific surface areas but very different structural differences. Therefore, this study proposes an effective and simple method to identify structural differences in graphene-like allotropes. The adsorptive potential peaks of rGO-NP attained by the density functional theory method were found to be more scattered over the basal and non-basal regions than those of GIC-NP. Raman spectra and high resolution TEM images showed more distinctive crystallographic defects in the rGO-NP than in the GIC-NP. Because the R-ratio values of the edge and basal plane of the sample were maintained and relatively similar in the rGO-NP (0.944 for edge & 1.026 for basal), the discrepancy between those values in the GIC-NP were found to be much greater (0.918 for edge & 0.164 for basal). The electrical conductivity results showed a remarkable gap between the rGO-NP and GIC-NP attributed to their inherent morphological and crystallographic properties.