• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.376-384
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• 2023

Nitrogen-doped graphene was synthesized by a hydrothermal method using graphene oxide (GO) as the raw material, urea as the reducing agent and nitrogen as the dopant. The morphology, structure, composition and electrochemical properties of the samples are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), nitrogen adsorption-desorption analysis, electrical conductivity and electrochemical tests. The results show that urea can effectively reduce GO and achieve nitrogen doping under the hydrothermal conditions. By adjusting the mass ratio of raw materials to dopants, the graphene with different nitrogen doping contents can be obtained; the nitrogen content range is from 5.28~6.08% (atomic fraction percentage).When the ratio of dopant to urea is 1:30, the nitrogen doping content reaches a maximum of 6.08%.The supercapacitor performance test shows that the nitrogen content prepared by the ratio of 6.08% is the best at 0.1 A·g^-1. The specific capacitance is 95.2 F·g^-1.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.157-157
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• 2011

Graphene has generated significant interest in the recent years as a functional material for electronics, sensing, and energy applications due to its unique electrical, optical, and mechanical properties. Much of the considerable interest in graphene stems from results obtained for samples mechanically exfoliated from graphite. Practical applications, however, require reliable and well-controlled methods for fabrication of large area graphene films. Recently high quality graphene layers were fabricated using chemical vapor deposition (CVD) on nickel and copper with methane as the source of the carbon atoms. Here, we report a simple and efficient method to synthesize graphene layers using solid carbon source. Few-layer graphene films are grown using filtered vacuum arc source (FVAS) technique by evaporation of carbon atom on Ni catalytic metal and subsequent annealing of the samples at 800$^{\circ}$C. In our system, carbon atoms diffuse into the Ni metal layer at elevated temperatures followed by their segregation as graphene on the free surface during the cooling down step as the solubility of carbon in the metal decrease. For a given annealing condition and cooling rate, the number of graphene layers is easily controlled by changing the thickness of the initially evaporated amorphous carbon film. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as CVD and chemical methods.

• Journal of Adhesion and Interface
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• v.24 no.4
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• pp.120-123
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• 2023

Graphene, with its exceptional mechanical and electrical properties, has gained significant attention from researchers due to its superior characteristics compared to conventional materials. However, the application of graphene in electronic devices requires a crucial transcription and patterning process, which often introduces numerous defects, substantially impairing its properties. To overcome this limitation and unlock the full potential of graphene for commercial use, there have been various efforts to develop integrated processes for transcription and patterning. In this study, we present a novel growth method that simultaneously achieves precise patterning using polymer nanowires as masks, allowing for the direct growth of graphene. This innovative approach holds promise for realizing advanced electronic components based on nanomaterials in the future.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.235-235
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• 2012

Reduced graphene oxide (rGO) 물질을 사용하여 전계효과 트랜지스터를 제작하였고 이의 광전기적 특성을 펄스 레이저와 진공 저온 측정을 통하여 분석하였다. 이를 통하여 rGO 소자의 광소자로써의 이용 가능성에 대하여 고찰하였다.

• Korean Chemical Engineering Research
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• v.50 no.4
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• pp.754-757
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• 2012

In this report, we fabricate the porous graphene films through embossing process and vacuum filtration method and demonstrate their superior electrochemical properties as supercapacitor electrode materials. Insertion/removal of polystyrene nanoparticles between the graphene sheets allows to provide pore structures, leading to the effective prevention of restacking in graphene films. As-prepared porous graphene films have a large surface area, a bicontinuous porous structures, high electrical conductivity, and excellent mechanical integrity. The electrochemical properties of the porous graphene films as electrode materials of supercapacitor are investigated by using aqueous $H_2SO_4$ and ionic liquid solution under three-electrode system. The porous graphene films exhibit a high specific capacitance (284.5 F/g), which is two-fold higher than that of packing graphene films (138.9 F/g). In addition, the rate capability (98.7% retention) and long-term cycling stability (97.2%) for the porous graphene films are significantly enhanced, due to the facilitated ion mobility between the graphene layers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.68.2-68.2
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• 2012

We present a scheme for monolithically integrating aligned arrays of single walled carbon nanotubes (SWNTs) with sheets of graphene, for use in electronic devices. Here, the graphene and arrays of SWNTs are formed separately, using chemical vapor deposition techniques onto different, optimized growth substrates. Techniques of transfer printing provide a route to integration, yielding two terminal devices and transistors in which patterned structures of graphene form the electrodes and the SWNTs arrays serve as the semiconductor. Electrical testing and analysis reveal the properties of optically transparent transistors that use this design, thereby giving insights into the nature of contacts between graphene and SWNTs.

• Journal of IKEEE
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• v.21 no.3
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• pp.297-308
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• 2017

By using electron beam evaporation under appropriate conditions, we obtained graphene intercalated sheets on Si(111) with an average crystallite size less than 11nm. The formation of such nanocrystalline graphene was found as a time-dependent function of carbon deposition at a substrate temperature of $1000^{\circ}C$. The structural and electronic properties as well as the surface morphology of such produced materials have been confirmed by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, scanning electron microscopy, atomic force microscopy and scanning tunneling microscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.129-133
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• 2022

This paper describes why we must use graphene materials for solar cells and biosensors. It has been superior in several properties such as super-thin film, higher tensile strength, high current density, high thermal conductivity, and high mobility. Therefore, graphene is one of the emerging advanced materials because of its applicability in various electronic device applications. We investigated the requirements of graphene materials for the application of solar cells and biosensors. In addition, we discussed the research trends such as transducers in biosensors and transparent electrodes in solar cells. The research on graphene materials and their application will be beneficial and helpful for the near future.

• Journal of the Korean Ceramic Society
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• v.50 no.5
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• pp.309-318
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• 2013

Graphene has attracted considerable attention since its first production from graphite in 2004, due to its outstanding physical and chemical properties. The development of production methodsfor large scale, high quality graphene films is an essentialstep toward realizing graphene applications such as transparent, conductive film. Chemical deposition methods, using metal catalystsand gaseous carbon sources, have been extensively developed for large area synthesis. In this paper, wereview recent progress ingraphene production, and survey the role of graphene electrodes in various electronic devices such as touch panels, solar cells, solid statelighting and microelectronic devices.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.122-127
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• 2017

Graphene grown on copper-foil substrates by chemical vapor deposition (CVD) has been attracting interest for sensor applications due to an extraordinary high surface-to-volume ratio and capability of large-scale device fabrication. However, CVD graphene has a polycrystalline structure and a high density of grain boundaries degrading its electrical properties. Recently, processes such as electropolishing for flattening copper substrate has been applied before growth in order to increase the grain size of graphene. In this study, we systemically analyzed the effects of the process condition of electropolishing copper foil on the quality of CVD graphene. We observed that electropolishing process can reduce surface roughness of copper foil, increase the grain size of CVD graphene, and minimize the density of double-layered graphene regions. However, excessive process time can rather increase the copper foil surface roughness and degrade the quality of CVD graphene layers. This work shows that an optimized electropolishing process on copper substrates is critical to obtain high-quality and uniformity CVD graphene which is essential for practical sensor applications.