• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.340-343
• /
• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.191-194
• /
• 1996

Maxwell displacement current clearly shows the onset of a first order phase transition from gaseous to gaseous-fluid phase, and polar ordering of liquid molecules in the solid phase coexisting with fluid. For further monolayer compression in the fluid/solid phase transition, the condensation of domains was suggested.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.424.1-424.1
• /
• 2014

Vanadium dioxide (VO2) is a strongly correlated oxide exhibiting a first-order metal-insulator transition (MIT) that is accompanied by a structural phase transition from a low temperature monoclinic phase to a high-temperature rutile phase. VO2 has attracted significant attention because of a variety of possible applications based on its ultrafast MIT. Interestingly, the transition nature of VO2 is significantly affected by stress due to doping and/or interaction with a substrate and/or surface tension as well as defects. Accordingly, there have been considerable efforts to understand the influences of such factors on the phase transition and the fundamental mechanisms behind the MIT behavior. Here, we present the influences of oxygen deficiency, hydrogen doping, and substrate-induced stress on MIT phenomena in single-crystalline VO2 nanobeams. Specifically, the work function and the electrical resistance of the VO2 nanobeams change with the compositional variation due to the oxygen-deficiency-related defects. In addition, the VO2 nanobeams during exposure to hydrogen gas exhibit the reduction of transition temperature and the complex phase inhomogenieties arising from both substrate-induced stress and the formation of the hydrogen doping-induced metallic rutile phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.268-271
• /
• 2004

The phase transition from amorphous to crystalline states, and vice versa, of $Ge_2Sb_2Te_5$ films by applying electrical pulses have been studied. This material can be used as nonvolatile memory. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.3
• /
• pp.240-244
• /
• 2010

The surface segregation and surface order near the order-disorder phase transition of FeCo alloy was studied through Monte Carlo simulation of an Ising type model Hamiltonian. The results showed that the proper choice of Hamiltonian parameters could reproduce the recent observation of surface order above the transition temperature and that the field term played dominant role.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.11
• /
• pp.892-897
• /
• 2001

Variations of dielectric and piezoelectric properties and associated phase transformation of <001> -oriented rhombohedral 0.92Pb (Zn$\sub$1/3/Nb$\sub$2/3/)O$_3$-0.08PbTiO$_3$ single crystals were investigated. The longitudinal strain level was found to abruptly increase at 15 kV/cm, corresponding to that where an induced phase appears within a multidomain matrix. Drastic decreases in the dielectric constant, transverse coupling, and transverse piezoelectric coefficient associated with the E-field induced phase were the result of increased crystal anisotropy in PZN-PT crystals. By contrast, the thickness coupling increased from 53 % at 0 kV/cm to 64 % at 45 kV/cm, also associated with this phase transition under the E-field. The measured dielectric and piezflelectric properties found for the induced phase state were nearly identical to those of <001> poled tetragonal (1-x)PZN-xPT (x>0.1) crystals. Based on these results, it is evident that the symmetry of induced phase is tetragonal.

• Electrical & Electronic Materials
• /
• v.8 no.2
• /
• pp.190-195
• /
• 1995

Temperature dependences of the dielectric constant K(T), remanent polarization $P_{r}$, (T), effective birefringence overbar .DELTA.n(T), transmitted light intensity and quadratic electro optic coefficient R(T) of the two-stage sintered xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$-(1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(x=0.085, 0.09, 0.40.leq.y.leq.0.70) ceramics were investigated. Increasing the PbZr $O_{3}$ contents, the crystal structure of a specimen was changed from a tetragonal phase to a rhombohedral and cubic phase, and the phase transition was showed a diffuse phase transition(DPT) characteristics. In the compositions which located on the PE-FE phase boundary, the discrepancy was observed between the Curie temperature and temperature which a microscopic polarization and effective birefringence were disappeared.red.d.

• Proceedings of the KIPE Conference
• /
• 2011.11a
• /
• pp.73-74
• /
• 2011

Phase-shedding, one famous technology for multi-phase converters, is implemented in a bi-directional multi-phase converter for ESS. It reduces active operating modules at light load to compensate efficiency. Shedding point, the load level where the converter changes the number of active modules, is important factor that affects the effect of phase-shedding. Loss analysis is done for determining shedding point. Phase-shedding hysteresis is applied so that excessive phase transition is avoided. This paper proposes shedding point correction where the shedding point is adaptively corrected by calculating a new shedding point.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1989.06a
• /
• pp.107-109
• /
• 1989

Based on the ferroelectric microstructural residual stress model, the relation between grain size and residual elastic energy was proposed. It was found that the residual elastic energy increased with decreasing grain size by modeling and DSC results. This residual elastic energy change with grain size which induce the phase transituion mode change was the cause of a diffuse phase transition in small grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.05a
• /
• pp.25-33
• /
• 1994

Temperature dependences of the remanent polarization $P_{\gamma}$/(T), effective birefringence ㅿｎ(T). dielectric constant K(T) and quadratic electro-optic coefficient R(T) of the two-stage sintered xBa(La$_{1/2}$Nb$_{1/2}$)O$_3$Pb$(Zr_{y}Ti_{1-y})O-{3}$(x=0.085, 0.09, 0.40$\leq$y$\leq$0.70)ceramics were investigated. Increasing the PbZrO$_3$ contents, the crystal structure of a specimen was varied from tetragonal and rhombohedral to cubic, and the phase transition was showed a diffuse phase transition(DPT) characteristics. Especially. in the compositions which located on the PE-FE phase boundary were showed a discrepancy between curie temperature and temperature range which a macroscopic polarization and a effective birefringence were disappeared.