• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.264-268
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• 2011

The Molybedenium thin film is generally used on back contact material of CIGS solar cell due to low electrical resistivity and stable thermal expansion coefficient. The Mo thin films deposited on si wafer by the magnetron sputtering method. The research focused on the variation of electrical resistivity of films which deposited with various working pressure at the target power of 2.0 kW(8.4 W/). The lowest resistivity of Mo thin film showed $9.0{\mu}O$-cm at pressure of 1.5 mTorr. However, working pressure increasing up to 50 mTorr, resistivities were highly increased. The results showed that the conductivity of Mo films depended on growing structures and defects in deposition process. Surface morphology, porosity, grain size, oxidation, and bonding structures were analysed by SEM, AFM, spectroscopic ellipsometry (SE), XRD, and XPS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.717-723
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• 2009

Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.57-60
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• 2000

In this paper, study on the properties of the thermal degradated epoxy resin which is used in indoor insulation apparatus is performed to investigate the problems of the decreasing insulation characteristics and crack in the indoor insulation apparatus. As a parameter of variation, SEM, contact angle, surface resistivity, relative dielectric constant and weight loss are measured. As the results of the above measurements, the contact angle and surface resistivity of the epoxy resin has increased to 200$^{\circ}C$ in but at the above 200$^{\circ}C$ the values have decreased. The relative dielectric constants the thermal treated samples have increased on with the temperature increase. We find the volatile components of the epoxy resin compound has disappeared during thermal degradation by SEM. The insulation properties of the epoxy resin have increased by the 200$^{\circ}C$ but decreased in the above 200$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.214-219
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• 2002

The influence of ultraviolet (UV) irradiation and corona on the surface degradation of high temperature vulcanized (HTV) silicone rubber used for outdoor insulation through measuring surface voltage decay after corona charging, surface resistivity, contact angle and X-ray photoelectron spectroscopy (XPS) analysis was studied. The surface resistivity calculated by the surface voltage decay was compared with a value directly obtained from the three electrode method having the guard ring electrode. A good agreement between the two methods for surface resistivity was obtained. UV treated specimens showed the slower decrease of surface voltage decay, while the corona exposed specimens showed a dramatically faster decrease. Although both artificial treatments cause the same oxidative products, which was confirmed with XPS, we could distinguish the difference between the reactions of the two treatments by monitoring the surface voltage decay on corona-charged specimen. In addition, we could derive the specific surface states of the silicone rubber treated by accelerated artificial aging factors and the degradation process.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.51-51
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• 1997

• Korean Journal of Metals and Materials
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• v.48 no.6
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• pp.565-569
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• 2010

We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of $4.70{\times}10^{-4}$, $5.95{\times}10^{-2}$, $4.85{\times}10^{-1}\;{\Omega}cm^{2}$ on p-GaN when annealed at $600{^{\circ}C}$ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at $600{^{\circ}C}$ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.29-33
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• 2003

Material and electrical properties of copper-based ohmic contacts on n-type 4H-SiC were investigated for the effects of the post-annealing and the metal covering conditions. The ohmic contacts were prepared by sequential sputtering of Cu and Si layers on SiC substrate. The post-annealing treatment was performed using RTP (rapid thermal process) in vacuum and reduction ambient. The specific contact resistivity ($p_{c}$), sheet resistance ($R_{s}$), contact resistance ($R_{c}$), transfer length ($L_{T}$), were calculated from resistance (RT) versus contact spacing (d) measurements obtained from TLM (transmission line method) structure. The best result of the specific contact resistivity was obtained for the sample annealed in the reduction ambient as $p_{c}= 1.0 \times 10^{-6}\Omega \textrm{cm}^2$. The material properties of the copper contacts were also examined by using XRD. The results showed that copper silicide was formed on SiC as a result of intermixing Cu and Si layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.764-768
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• 2002

Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.785-792
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• 2012

A new flip chip structure consisting of interlocking joints locally surrounded by non-conductive adhesive was investigated in order to improve the contact resistance characteristics and prevent the parasitic capacitance increase. The average contact resistance of the interlocking joints was substantially reduced from $135m{\Omega}$ to $79m{\Omega}$ by increasing the flip chip bonding pressure from 85 MPa to 185 MPa. Improvement of the contact resistance characteristics at higher bonding pressure was attributed not only to the increased contact area between Cu chip bumps and Sn pads, but also to the severe plastic deformation of Sn pads caused during formation of the interlocking-joint structure. The parasitic capacitance increase due to the non-conductive adhesive locally surrounding the flip chip joints was estimated to be as small as 12.5%.