• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.386-390
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• 2006

This paper describes the ohmic contact formation of polycrystalline 3C-SiC films deposited on thermally grown Si wafers. In this work, a TiW (titanium tungsten) film as a contact material was deposited by RF magnetron sputter and annealed with the vacuum process. The specific contact resistance (${\rho}_{c}$) of the TiW contact was measured by using the C-TLM (circular transmission line method). The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature as also analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscope). All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30 min., the lowest contact resistivity of $2.90{\times}10{\Omega}cm^{2}$ was obtained due to the improved interfacial adhesion. Therefore, the good ohmic contact of polycrystalline 3C-SiC films using the TiW film is very suitable for high-temperature MEMS applications.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.8-14
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• 1997

The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.

• Carbon letters
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• v.14 no.2
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• pp.105-109
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• 2013

Effects of the amount of nickel powder (Ni) in Ni-carbon fiber (CF) hybrid filler systems on the conductivity(or resistivity) and thermal coefficient of resistance (TCR) of filled high density polyethylene were studied. Increases of the resistivity and TCR with increasing Ni concentration at a given hybrid filler content were observed. Using the fiber contact model, we showed that the main role of Ni in the hybrid filler system is to decrease the interfiber contact resistance when Ni concentration is less than the threshold point. The formation of structural defects leading to reduced reinforcing effect resulted in both a reduction of strength and an increase of the coefficient of thermal expansion in the composite film; these changes are responsible for the increases of both resistivity and TCR with increasing Ni concentration in the hybrid filler system.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2000.11a
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• pp.17-21
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• 2000

Logarithmic electrical resistivity of the untreated or thin diameter carbon fiber composite increased suddenly to the infinity when the fiber fracture occurred by tensile electro-micromechanical test, whereas that of the ED or thick fiber composite increased relatively broadly up to the infinity. Electrical resistance of single-carbon fiber composite increased suddenly due to electrical disconnection by the fiber fracture in tensile electro-micromechanical test, whereas that of SFC increased stepwise due to the occurrence of the partial electrical contact with increasing the buckling or overlapping in compressive test. Electrical resistivity measurement can be very useful technique to evaluate interfacial properties and to monitor curing behavior of single-carbon fiber/epoxy composite under tensile/compressive loading.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.33-36
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• 2004

탄소 도핑$(5{\times}10^{19}\;cm^{-3})$된 p-type GaAsSb 에피층 위에, Ti/Pt/Au, Pd/Au, Pd/Ir/Au를 이용한 다층 오믹 접촉을 제작하였다. MOCVD(metal-organic chemical vapor deposition)를 이용하여 성장시킨 이 p-GaAsSb의 정공 이동도는 탄소의 도핑 농도가 매우 높음에도 불구하고, $50\;cm^2/Vs$로 측정되었다. 오믹 접촉의 전기적 특성을 측정하기 위하여 TLM(Transfer length method)를 이용하였다. Pd/Ir/Au을 이용한 오믹접촉의 specific contact resistivity는 $10^{-8}\;ohm-cm^2$ 보다 작은 수치를, transfer length는 100 nm보다 작은 수치를 보였으며, Ti/Pt/Au을 이용한 ohmic contact의 specific contact resistivity는 $10^{-7|\;ohm-cm^2$ 보다 작은 수치를, transfer length는 400 nm보다 작은 수치를 나타내었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.178-182
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• 1991

Contact resistance and contact leakage current of the $Al/TiSi_2/Si$ system are investigated for $N^+\;and\;P^+$ junctions. Titanium disilicide is one of the most common silicides because of its thermal stability, ability, to form selective formation and low resistivity. In this paper, the effect of RTA temperature and Junction implant dose are characterized. The $TiSi_2$ contact resistance to $N^+$ silicon is lower than that of Al to $N^+$ silicon, but $TiSi_2$ of contact resistance to $P^+$ silicon is higher than that of Al to $P^+$ silicon. The $TiSi_2$ of contact leakage current to $N^+\;and\;P^+$ silicon is similar to that of Al contact.

• Economic and Environmental Geology
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• v.23 no.2
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• pp.215-219
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• 1990

Geological and electrical resistivity surveys along the survey line of about 3 km between Kyungsangbukdo Youngilgun Hodong and Gwangmyungdong using by dipole-dipole electrode array method were carried out to examine the boundary and structural relationship between Tertiary Pohang and Janggi basins. Electrical resistivity data were interpreted qualitatively and quantitatively by means of pseudosection of apparent electrical resitivity distribution and finite difference method for two dimensional geologic structure model. The nearly vertical fault zone with low electrical resistivity value of 1-5 Ohm-m and widths of about 200m at the surface and 400 m at depth exists around 1.2 km west of national road between Ocheoneup and Yangbukmyun. Mudrocks, sandstones and tuffaceous rocks are widely distributed with electrical resistivity values of 6-77 Ohm-m. Especially, tuffaceous rocks with relatively high electrical resistivity value are predominant at eastern side of fault zone. Consequently, it is known that Pohang and Janggi basins are in fault contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.159-159
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• 2010

We conducted bum-in test by current stress to evaluate acceleration reliability characteristics about p-resistivity influence of GaN-based light-emitting diodes. The LEDs used in this study are the polarization field-induced LED(PF-LED) having low p-resistivity and the highly resistive LED(HR-LED) having high p-resistivity. The result of high stress experiment shows that current crowding phenomenon is occurred from the center of between p-bonding pad and n-bonding pad to either electrodes. In addition, series resistance and optical power decrease dramatically. These results means that the resistance of between p-bonding pad and p-GaN affect reliability. That's why we need to consider the ohmic contact of p-bonding pad when design the high efficiency and high reliability LEDs.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.09a
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• pp.1177-1181
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• 2010

Unsaturated soil can describe soil particles, air-water and contact face between air and water. The providing a simple method to predict water content in Geotechnical mechanics is very important. In this experiment, DIP (Digital Image Processing) and electrical resistivity techniques were used simultaneously to predict the saturation degree, and the results of two techniques will be compared each other to get conclusion. The experiment was carried out for Jumunjin standard sand. The picture of experimental column of soil and water was taken at different times, then using DIP technique to measure Color number-the height of capillary in soil column. At the same time, measure electrical resistivity of the soil.