p-contact resistivity influence on device-reliability characteristics of GaN-based LEDs

p-contact 저항에 따른 GaN기반 LED의 device-reliability 특성

  • Park, Min-Jung (Yeungnam University & LED-IT fusion technology research center) ;
  • Kim, Jin-Chul (Yeungnam University & LED-IT fusion technology research center) ;
  • Kim, Sei-Min (Yeungnam University & LED-IT fusion technology research center) ;
  • Jang, Sun-Ho (Yeungnam University & LED-IT fusion technology research center) ;
  • Park, Il-Kyu (Yeungnam University & LED-IT fusion technology research center) ;
  • Park, Si-Hyun (Yeungnam University & LED-IT fusion technology research center) ;
  • Cho, Yong (Yeungnam University & LED-IT fusion technology research center) ;
  • Jang, Ja-Soon (Yeungnam University & LED-IT fusion technology research center)
  • 박민정 (영남대학교 & LED-IT 융합산업화센터) ;
  • 김진철 (영남대학교 & LED-IT 융합산업화센터) ;
  • 김세민 (영남대학교 & LED-IT 융합산업화센터) ;
  • 장선호 (영남대학교 & LED-IT 융합산업화센터) ;
  • 박일규 (영남대학교 & LED-IT 융합산업화센터) ;
  • 박시현 (영남대학교 & LED-IT 융합산업화센터) ;
  • 조용 (영남대학교 & LED-IT 융합산업화센터) ;
  • 장자순 (영남대학교 & LED-IT 융합산업화센터)
  • Published : 2010.06.16

Abstract

We conducted bum-in test by current stress to evaluate acceleration reliability characteristics about p-resistivity influence of GaN-based light-emitting diodes. The LEDs used in this study are the polarization field-induced LED(PF-LED) having low p-resistivity and the highly resistive LED(HR-LED) having high p-resistivity. The result of high stress experiment shows that current crowding phenomenon is occurred from the center of between p-bonding pad and n-bonding pad to either electrodes. In addition, series resistance and optical power decrease dramatically. These results means that the resistance of between p-bonding pad and p-GaN affect reliability. That's why we need to consider the ohmic contact of p-bonding pad when design the high efficiency and high reliability LEDs.

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