• Journal of Electrical Engineering and Technology
• /
• v.4 no.2
• /
• pp.255-265
• /
• 2009

This paper presents the acoustic noise and mechanical vibration reduction of a coreless brushless DC motor with an air dynamic bearing used in a digital lightening processor. The coreless brushless DC motor does not have a stator yoke or stator slot to remove the unbalanced force caused by the interaction between the stator yoke and the rotor magnet. An unbalanced force makes slotless brushless DC motors vibrate and mechanically noisy, and the attractive force between the magnet and the stator yoke increases power consumption. Also, when a coreless brushless DC motor is driven by a $120^{\circ}$ conduction type inverter, high frequency acoustic noise occurs because of the peak components of the phase currents caused by small phase inductance and large phase resistance. In this paper, a core-less brushless DC motor with an air dynamic bearing to remove mechanical vibration and to reduce power consumption is applied to a digital lightening processor. A $180^{\circ}$ conduction type inverter drives it to reduce high frequency acoustic noise. The applied methods are simulated and tested using a manufactured prototype motor with an air dynamic bearing. The experimental results show that a coreless brushless DC motor has characteristics of low power consumption, low mechanical vibration, and low high frequency acoustic noise.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.1
• /
• pp.43-46
• /
• 2013

In order to develop electrical insulation material, organically modified layered silicate was incorporated into an epoxy matrix to prepare nanocomposite. Transmission electron microscopy (TEM) observation showed that organophillic clay was in an exfoliated state, while hydrophilic clay was not dispersed into nanolayers within the epoxy matrix. Epoxy/organophilic clay (2.8 wt%) nanocomposite was mixed and cured at $150^{\circ}C$ for 4.5 hr. I-V characteristics, volume resistance and dielectric properties for the cured nanocomposite were estimated. Current density increased with increasing temperature, and volume resistance decreased with increasing temperature, in neat epoxy and epoxy/organophilic clay (2.8 wt%) nanocomposite. As frequency increased, the dielectric loss value decreased in the two systems.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1562-1564
• /
• 1996

Langmuir-Blodgett (LB) method have been used by many rescarcher because of its facility to control the thickness of film as molecular order and orientation of molecular. We fabricated MIM device using copolymer LB films of $2C_{18}MA-VE_2$ and elecctrical conduction mechanism in ultra-thin LB film were investigated. In our experimental results, the maleate copolymer LB film have the properity of insulator like organic ultra-thin fiim. Its diclcctric constant was about 3.5 and its voltage generation about 0.1 Volt. And Schottky current was apeared as electrical conduction current and Schottky barrier was about 0.9(eV).

• Proceedings of the KIEE Conference
• /
• 1988.07a
• /
• pp.763-765
• /
• 1988

Thermally stimulated current, cubical expension, capability change were measured by temperature variation. According to the capability change, TSC peak value was increased. We found that the crystal dissolution is 375 K and amorphous state becomes 388K. Charged partical behavior in the dipole and electronic trop were found iomic conduction in the low field and electronic conduction in the high field. Charged particle in the semiconduction storey was aceumulated in the interface by electron injection which can be arise TSC.

• 전기의세계
• /
• v.31 no.6
• /
• pp.437-444
• /
• 1982

Although several kinds of conduction mechanism of PTC thermistor have been reported, there were few satisfying results. In this paper, the reported conduction mechanism theories were scrutinized and analyzed by using the experimental results. PTC thermistors for this study were manufactured by adding Sb$\_$2/O$\_$3/, AI$\_$2/O$\_$3/, TiO$\_$2/, and SiO$\_$2/ to BaTiO$\_$3/, and by sintering it at different temperatures. In order to analyze the conduction mechanism, R-T characteristics and its frequency dependence of specimens were measured. And also, the structures of specimens were studied. Especially this paper emphasized the explanation of the resistivity characteristics as the grain growth state of PTC thermistor specimens with respect to soaking temperature. According to the results, the resistivity of PTC thermistor whose grain was formed by semiconducting, was independent to the grain size at room temperature. For small and uniform grain size, the slope of the resistivity near the Curie temperature and the resistivity above the Curie temperature became greater and PTCR effect was improved.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.12
• /
• pp.2361-2365
• /
• 2007

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3- methylrhenyi)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum(Alq3) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.25 no.3
• /
• pp.204-212
• /
• 2020

In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.531-532
• /
• 2005

We have used ITO/$Alq_3$/Al structure to study electrical conduction mechanism in $Alq_3$ based organic light emitting diode. Current-voltage characteristics were measured at room temperature by varying the thickness of $Alq_3$ layer from 60 to 400nm. We were able to prove that there are three different mechanism depending on the applied voltage; Ohmic, SCLC (space-charge-limited current). and TCLC (trap-charge -limited current) mechanism.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.957-958
• /
• 2007

The conduction-cooled HTS SMES magnet is operated in cryogenic temperature. The insulation design at cryogenic temperature is an important element that should be established to accomplish miniaturization that is a big advantage of HTS SMES. However, the behaviors of insulators for cryogenic conditions in air or vacuum are virtually unknown. Therefore, we need active research and development of insulation concerning application of the conduction-cooled HTS SMES. Specially, this paper was studied about high vacuum and cryogenic temperature breakdown and flashover discharge characteristics between cryocooler and magnet-coil. The breakdown and surface flashover discharge characteristics were experimented at cryogenic temperature and vacuum. Also, we were experimented about mechanical properties of 4-point bending test. From the results, we confirmed that about research between cryocooler and magnet-coil established basic data in the insulation design.

• Proceedings of the KIEE Conference
• /
• 1999.07f
• /
• pp.2568-2571
• /
• 1999

Recently, new trend in telecommunication device is to apply low voltage, about 3.3V-1.5V. However, it is undesirable in view of high efficiency and power desity which is the most important requirement in the distributed power system. Rectification loss in the output stage in on-board converter for distributed power system are constrained to obtain high efficience at low output voltage power suppies. This paper is investigated conduction power loss in synchronouss rectifier with a parallel -connected Schottky Barrier Diode(SBD). Conduction losses are calculated for both MOSFET and SBD respectively. The SBD conduction power loss dissipates more than the MOSFET rectifier conduction power loss.