• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.8
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• pp.629-639
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• 2014

This paper deals with an alternative multi-functional structures by using grid-stiffened composite structure with excellent bending stiffness and lightweight characteristics which is capable of easy embedding of electrical/electronic circuitry into structure. The enhancement of thermal conduction capability is made by the application of pitch-based carbon fiber. The lightweight radiation spot shielding technique is also proposed for multi-functional structures without conventional housing and the effectiveness of selective radiation shielding is validated through the proton irradiation test.

• Journal of Power Electronics
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• v.10 no.1
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• pp.9-13
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• 2010

This paper proposes an input-series-output-parallel connected ZVS full bridge converter with interleaved control for photovoltaic power conditioning systems (PV PCS). The input-series connection enables a fully modular power-system architecture, where low voltage and standard power modules can be connected in any combination at the input and/or at the output, to realize any given specifications. Further, the input-series connection enables the use of low-voltage MOSFETs that are optimized for a very low RDSON, thus, resulting in lower conduction losses. The system costs decrease due to the reduced current, and the volumes of the output filters due to the interleaving technique. A topology for a photovoltaic (PV) dc/dc converter that can dramatically reduce the power rating and increase the efficiency of a PV system by analyzing the PV module characteristics is proposed. The control scheme, consisting of an output voltage loop, a current loop and input voltage balancing loops, is proposed to achieve input voltage sharing and output current sharing. The total PV system is implemented for a 10-kW PV power conditioning system (PCS). This system has a dc/dc converter with a 3.6-kW power rating. It is only one-third of the total PV PCS power. A 3.6-kW prototype PV dc/dc converter is introduced to experimentally verify the proposed topology. In addition, experimental results show that the proposed topology exhibits good performance.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.289.1-289.1
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• 2014

In this study, we made a organic thin film device in MIS(Metal-Insulator-Semiconductor) structure by using PVP (Poly vinyl phenol) as a insulating layer, and CdSe/ZnS nano particles which have a core/shell structure inside. We dissolved PVP and PMF in PGMEA, organic solvent, then formed a thin film through a spin coating. After that, it was cross-linked by annealing for 1 hour in a vacuum oven at $185^{\circ}C$. We operated FTIR measurement to check this, and discovered the amount of absorption reduced in the wave-length region near 3400 cm-1, so could observe decrease of -OH. Boonton7200 was used to measure a C-V relationship to confirm a properties of the nano particles, and as a result, the width of the memory window increased when device including nano particles. Additionally, we used HP4145B in order to make sure the electrical characteristics of the organic thin film device and analyzed a conduction mechanism of the device by measuring I-V relationship. When the voltage was low, FNT occurred chiefly, but as the voltage increased, Schottky Emission occurred mainly. We synthesized CdSe/ZnS and to confirm this, took a picture of Si substrate including nano particles with SEM. Spherical quantum dots were properly made. Due to this study, we realized there is high possibility of application of next generation memory device using organic thin film device and nano particles, and we expect more researches about this issue would be done.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.207.1-207.1
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• 2014

High-mobility and two dimensional conduction at the interface between two band insulators, LaAlO3 (LAO) and SrTiO3 (STO), have attracted considerable research interest for both applications and fundamental understanding. Several groups have reported the photoconductivity of LAO/STO, which give us lots of potential development of optoelectronic applications using the oxide interface. Recently, a giant photo response of Pd nano particles/LAO/STO is observed in UV illumination compared with LAO/STO sample. These phenomena have been suggested that the correlation between the interface and the surface states significantly affect local charge modification and resulting electrical transport. Water and gas adsorption/desorption can alter the band alignment and surface workfunction. Therefore, characterizing and manipulating the electric charges in these materials (electrons and ions) are crucial for investigating the physics of metal oxide. Proposed mechanism do not well explain the experimental data in various ambient and there has been no quantitative work to confirm these mechanism. Here, we have investigated UV photo response in various ambient by performing transport and Kelvin probe force microscopy measurements simultaneously. We found that Pd nano particles on LAO can form Schottky contact, it cause interface carrier density and characteristics of persistence photo conductance depending on gas environment. Our studies will help to improve our understanding on the intriguing physical properties providing an important role in many enhanced light sensing and gas sensing applications as a catalytic material in different kinds of metal oxide systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.190-195
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• 2021

Typical Mn-SnO₂/Ag/Mn-SnO₂ tri-layer films were prepared on a PET substrate by RF/DC magnetron sputtering method at room temperature. Based on EMP simulation, the thicknesses of the top and bottom Mn-doped SnO₂ layers were kept at 40 nm and the Ag layer was maintained at 13 nm for continuous electrical conduction. The experimentally measured optical transmittances at 550 nm wavelength were ranged from 82.9 to 88.1 % and sheet resistances were varied from 5.9 to 6.9 Ω/☐. The highest value of figure of merit, ϕ_TC was 48.1 × 10^-3 Ω^-1. Based on bending test under 4 and 5 mm of inner and outer curvature radius condition, tri-layer film resistance varies only by approximately 1.5 % after 10,000 bending cycles, showing excellent mechanical flexibility.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.60-63
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• 2023

The AlGaN/GaN heterostructure has high electron mobility due to the two-dimensional electron gas (2-DEG) layer, and has the characteristic of high breakdown voltage at high temperature due to its wide bandgap, making it a promising candidate for high-power and high-frequency electronic devices. Despite these advantages, there are factors that affect the reliability of various device properties such as current collapse. To address this issue, this paper used metal-organic chemical vapor deposition to continuously deposit AlGaN/GaN heterostructure and SiN passivation layer. Material and electrical properties of GaN HEMTs with/without SiN cap layer were analyzed, and based on the results, low-frequency noise characteristics of GaN HEMTs were measured to analyze the conduction mechanism model and the cause of defects within the channel.

• Journal of Bio-Environment Control
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• v.22 no.4
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• pp.316-321
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• 2013

This study was carried out to analyze heat transfer characteristics and heat flow through air-inflated double layer PO film with thermal resistance method. The experiments was conducted in the laboratory controlled air temperature between 258.0 K and 278.0 K. The experimental materials were made up two layers PO film and an inflated-air layer. The thickness of air-inflated layer was fixed at 3 types of 110, 175, 225 mm. The electrical circuit analogy for heat transfer by conduction, radiation and convection was introduced. Experimental data shows that the dominant thermal resistance in heat transfer through the air-inflated double layer film was convection. Calculation errors were 1.1~18.5 W for heat flow. In result, the method of thermal resistance could be introduced for analysis of heat flow characteristics through air-inflated double layer film.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.614-623
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• 1993

Electrical characteristics of LiF-$Li_{2}O-B_{2}O_{3}-P_{2}O_5$ glasses with fixed $Li_2O$ content have been investigated by using AC impedance spectroscopy. Part of the total lithium ions present in these glasses contributes to conduction, and the changes in electrical conductivity with composition was inconsistent with the weak electrolyte model. The power law could not be used to determine the hopping ion concentration in these glasses. Both mobile carrier density and mobility have been modified as Li were added in the form of LiF. The formation of $(B-O-P)^-,di^-$, and metaborate group gave additional available sites for Li+ diffusion causing the enhancement of conductivity. The observed maximum conductivity was $2.43 \times 10^{-4}$S/cm at $150^{\circ}C$ at the composition containing 8mol% LiF. The decomposion potential amounted to 5.94V. The Li/glass electrolyte/$TiS_2$ solid-state cell showed open circuit voltage of 3.14V and energy density of 22 Wh/Kg at $150^{\circ}C$.