• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.819-821
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• 1998

Arachidic acid(AA) was used as LB films and its dielectric and conduction characteristics were investigated. The relative dielectric constant(${\varepsilon}_{LB}$) of AA LB films obtained from capacitance-frequency properties was about $3.5{\sim}4.1$. And the conductivity(${\sigma}_{LB}$) of AA LB films obtained from Current-Voltage characteristics was about $2.6{\times}10^{-15}[S/cm]$. Also, the conduction mechanism of current in LB films was dependant on Schottky type and the barrier height obtained from Schottky plot was about 1.4[eV].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.281-285
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• 1998

The microstructure and conduction characteristics of ZnO varistor fabricated in the range of 0.0 ~ 4.0mol% $Y_20_3$ were investigated. With increasing$Y_20_3$ content, distribution of spinel phase decreased, whereas Y-rich phase segregated to the nodal point increased, as a result, the average grain size decreased in the range of $20.0 ~ 4.8{\mu}m$. $Y_20_3$ content showing relatively good conduction characteristics was l.Omol%, then nonlinear exponent and leakage current was 55.3, 0.66mA.respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1007-1010
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• 2003

We made use of $Alq_3$ which is the representative light-emitting material. Electric conduction mechanism and luminance characteristics were analyzed in this paper. We have also measured current density-thickness-voltage characteristics with thickness variation from 60 to 400nm. we analyzed the low electric and the high electric field in theoretically. Also, maximum luminous efficiency is the thickness 200 nm of $Alq_3$ in luminous-thickness characteristics.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.24-28
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• 2004

We have used ITO/Alq$_3$/Al structure to study electrical conduction mechanism in organic light-emitting diodes. Current-voltage-luminance characteristics were measured at room temperature by varying the thickness of Alq$_3$ layer from 60 to 400mm. We were able to confirm that there are three different mechanisms depending on the applied voltage region; ohmic, space-charge-limited current, and trap-charge-limit-current mechanism. And the maximum luminous efficiency was obtained when the thickness of Alq$_3$ layer is 200nm.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.283-285
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• 1987

Transient conduction current (I - t characteristics) were measured in thin PPMMA (plasma-polymerized methyl methacrylate) films over the temperature range $60^{\circ}C-140^{\circ}C$ and the applied voltage range 3V - 30V. The current, which increased with temperature rise at constant applied voltage, showed less absorption current (current decay with time) at higher temperature region compared with those at lower temperature region. And the current, which increased with applied voltage rise at the constant temperature, showed less absorption current at higher voltage compared with those at lower voltage. The electric field current density characteristic curves were abtained from the conduction current values were after applying voltage for 30 minutes. And transient conduction currents were analyzed with high field conduction theories.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.5-8
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• 1997

A study on the electrical conduction characteristics of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir- Blodgett(LB) technique has recently been attracted interest as a method of the deposition ultrathin films. We hate fabricated N-docosyl N\`-methyl viologen-diTCNQ(DMVT) anion radical LB film and investigated the molecular orientation and electrical conduction characteristics. We have measured infrared transmission-reflection spectra. The alkyl chain is found to he well-ordered with the tilt angle of 13$^{\circ}$ with respect to the substrate surface normal and the TCNQ plane is tilted at 76$^{\circ}$ the surface normal. In ESR spectrum, we confirmed that a half-amplitude linewidth is clearly dependent on the incident angle, which indicates conducting species change. The in-plane conductivity of 31 lagers is approximately 1.33$\times$10$^{-6}$ S/cm. The ohmic behaviour was observed below 0.6 V, when current-voltage(I-V) characteristics was measured verically.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1419-1421
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• 1998

Many kind of factors have influence on the electrical properties of polymer such as mechanical stress, impurity, additives, chemical blend, interfacial phenomena and so on. In this study, we lay emphasis on interfacial phenomena which is important part in insulating design of power cable. The electrical conduction characteristics of XLPE film are investigated as a function of different electrode materials in MIM Interfaces.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.385-390
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• 1996

The electrical resistivity of the ceramic glaze coated on ceramic substrate plays an important role on the characteristics of the thick and thin film electrical circuits. In this study the effects of the various modifiers on the electrical resistivity were examined in SiO2-Al2O3-B2O3-RO-Na2O (RO=CaO , SrO, BaO, PbO) glass system. In alkali free glasses where divalent cations are responsible for electrical conduction the electrical conductivity of th glasses increased with the ionic size of divalent cations due to the decrease in the bond strength between oxyben and divalent cation. In Na2O containing glasses however where Na+ ion is responsible for electrical conduction the ionic conductivity decreased with the ionic size of divalent cations because the blocking effect of the cations on Na+ ion movement increased with larger divalent cations. Na+ ionic conduction also depended on the glass structure relaxation due to the corrdination number changes of B2O3 and Al2O3 which varied with the NaO2 content in the glass.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1689-1691
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• 1999

The conduction characteristics of $Pr_6O_{11}$-based ZnO varistor were investigated. ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistor were sintered at $1300^{\circ}C$ and $1350^{\circ}C$ in the addition range $0.0\sim2.0mol%$ $Sm_2O_3$, respectively. ZnO varistors which are added with 1.0mol% at each temperature exhibited best excellent conduction characteristics, namely the nonlinear exponent was 42.05 at $1300^{\circ}C$, 36.79 at $1350^{\circ}C$ and leakage current was $9.16{\mu}A$ at $1300^{\circ}C$, $11.7{\mu}A$ at $1350^{\circ}C$. Consequently, it is estimated that ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistors, which $Sm_2O_3$ is added 1.0mol% is to be used as a basic composition of $Pr_6O_{11}$-based ZnO varistors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.820-825
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• 1998

We deposited stearic acid LB films by using Langmuir-Blodgett (LB)method and investigated anisotropy electrical conduction characteristics by I-V measurement for horizontal direction and vertical direction. Also, we measured gad response between deposited LB films and organic gas for various temperature(0~8$0^{\circ}C$) by 9MHz At-cut quartz crystal microbalance. The LB films have electrical conduction characteristics such as semiconducting and insulating properties. The is, the conductivity of LB films for the horizontal and vertical direction is about 10\ulcornerS/cm and 10\ulcorners/cm, respectively. the frequency shift of stearic acid LB films for the organic gases depended on the mass change by the surface adsorption and the inner penetration to the sensing films. The resonant frequency shift of the quartz crystal microbalance for temperature properties of LB films is thought to the effect of the rearrangement or the damage pf LB films above the melting point and the mobility increasement of the organic gas by the temperature rising.