• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.290.1-290.1
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• 2013

The electrical characterization of Au islands on TiO2 at nanometer scale (as a Schottky nanodiode) has been studied with conductive atomic force microscopy in ultra-high vacuum. The diverse sizes of the Au islands were formed by using self-assembled patterns on n-type TiO2 semiconductor film using the Langmuir-Blodgett process. Local conductance images showing the current flowing through the TiN coated AFM probe to the surface of the Au islands on TiO2 was simultaneously obtained with topography, while a positive sample bias is applied. The boundary of the Au islands revealed a higher current flow than that of the inner Au islands in current AFM images, with the forward bias presumably due to the surface plasmon resonance. The nanoscale Schottky barrier height of the Au/TiO2 Schottky nanodiode was obtained by fitting the I-V curve to the thermionic emission equation. The local resistance of the Au/TiO2 nanodiode appeared to be higher at the larger Au islands than at the smaller islands. The results suggest that conductive atomic force microscopy can be used to reveal the I-V characterization of metal size dependence and the electrical effects of surface plasmon on a metal-semiconductor Schottky diode at nanometer scale.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.418-418
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• 2012

Synthesis of nanocrystalline diamond powder was investigated via a gas-to-particle scheme using the hot filament chemical vapor deposition. Effect of substrate surface seeding by nano diamond powder, and that of the electrical conductance of the substrate were studied. The substrate temperature, methane content in the precursor gas, filament-substrate distance and filament temperature were $670^{\circ}C$, 5% methane in hydrogen, 10 mm and $2400^{\circ}C$, respectively. The powder formation by gas-to-particle mechanism were greatly enhanced by the substrate seeding by the nano diamond powder. It was attributed to the removal of the electrostatic force between the substrate and the seeded nano diamond particle by the thermal electron shower from the hot filament, via the depolarization of the substrate surface or the attached diamond powder and subsequent levitation into the gas phase to serve as the gas-phase nucleation site. The powder formation was greatly favoured by the conducting substrate relative to the insulating substrate, which proved the actual effect of the electric static force in the powder formation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1384-1385
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• 2011

This paper presents the active maximum power point tracking(MPPT) control of the photovoltaic(PV) module integrated converter(MIC) system considering the shadow influence. Conventional perturbation and observation(PO) and incremental conductance(IC) are the method finding MPP by the continued self-excitation vibration. The MPPT control is unable to be performed by rapid output change affected by the shadow. To solve this problem, the active MPPT in which the step value changes by output change is presented. In case there are the solar radiation, a temperature and shadow influence, the presented algorithm treats and compares the conventional control algorithm and output error. In addition, the validity of the algorithm is proved through the output error response characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1899-1901
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• 2001

본 논문에서는 3차원 feed horn 안테나를 볼로미터에 결합함으로써 감지도(Detectivity)를 향상시킨 비가시광 영상 감지 소자를 제안하였다. Feed horn 안테나의 우수한 지향성(Directivity)를 통해서 주위의 잡음 성분을 제거함으로써 감지도의 향상을 확인할 수 있었다. 안테나와 볼로미터와의 결합 손실을 줄이기 위해서 볼로미터의 흡수층의 모양을 원형의 형태로 하였으며 크기도 안테나 폭과 일치를 시켰다. 또한 열적 고립 구조를 만들기 위한 지지 다리의 모양도 원형의 형태로 하여서 전체 길이를 증가 시켰으며 이로 인해 열전도도(Thermal conductance)를 $4.65{\times}10^{-8}$[W/K]까지 낮출 수 있었 다. 설계된 소자의 감지도는 $2.37{\times}10^{9}$[$cm\sqrt{Hz}/W$]을 나타내었으며 안테나 결합을 통한 감지도의 향상을 확인 할 수 있었다. 볼로미터의 제작은 MEMS 기술을 이용한 표면미세가공(Surface micromachining)법으로 열적 고립 구조체를 제작할 수 있으며 3차원 feed horn안테나는 SU-8이라는 음성 감광제를 경사회전노광시켜서 제작할 수 있다.

• 대한화학회지
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• 제16권4호
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• pp.201-204
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• 1972

Decylpyridinium Chloride 수용액의 c.m.c를 $10^{\circ}$부터 $50^{\circ}$사이의 온도에서 전기전도도법으로 결정하였던바 온도에 따른 c.m.c. 변화는 $15^{\circ}$근처에서 최소값을 보였다. Clausius-Clapeyron형의 식과 log(c.m.c)의 온도방법식으로 부터 micelle화 과정에 따른 ${\Delta}Hm$, ${\Delta}$Fm^{\circ}$, ${\Delta}$Sm, ${\Delta}Sm^{\circ}$ 및 ${\Delta}$Cpm을 얻어 dodecylpyridinium chloride와 dodecylpyridinium bromide의 값들과 비교 검토하였다.

• 한국세라믹학회지
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• 제48권6호
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• pp.549-558
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• 2011

Application of a generalized equivalent circuit including the electrode condition for the Hebb-Wagner polarization in the frequency domain proposed by Jamnik and Maier can provide a consistent set of material parameters, such as the geometric capacitance, partial conductivities, chemical capacitance or diffusivity, as well as electrode characteristics. Generalization of the shunt capacitors for the chemical capacitance by the constant phase elements (CPEs) was applied to a model mixed conducting system, $Ag_2S$, with electron-blocking AgI electrodes and ion-blocking Pt electrodes. While little difference resulted for the electron-blocking cell with almost ideal Warburg behavior, severely non-ideal behavior in the case of Pt electrodes not only necessitates a generalized transmission line model with shunt CPEs but also requires modelling of the leakage in the cell approximately proportional to the cell conductance, which then leads to partial conductivity values consistent with the electron-blocking case. Chemical capacitance was found to be closer to the true material property in the electron-blocking cell while excessively high chemical capacitance without expected silver activity dependence resulted in the electron-blocking cell. A chemical storage effect at internal boundaries is suggested to explain the anomalies in the respective blocking configurations.

• 전자공학회논문지A
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• 제33A권11호
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• pp.97-104
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• 1996

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductance, diamond-like carbon (DLC) film is a suitable materials for the passivation layers. For this purpose, DLC films are synthesized under various conditions and are characterized. Adhesive stregth is excellent and increased with the increase of the hydrogen gas flow rate. The resistivity of approximately 5.3X10$^{8}{\Omega}{\cdot}cm$ is measured by automatic spreading resistance probe analysis method. The thermal conductivity of DLC films is superior to that of PSG oxide and improved by increasing the hydrogen gas flow rate. The patterning techniques of the DLC films is developed using the lift-off and RIE methods to form 5${\mu}$m line. Finally, power transistor with the DLC film as passivation layer is fabricated and analyzed. The test result shows the improsved long-term stability and higher breakdown voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.106-113
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• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.4-7
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• 2002

Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.958-959
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• 2015

This paper proposes adaptive incremental conductance(A-IC) algorithm for maximum power point tracking(MPPT) control of photovoltaic. Conventional Perturbation & Observation(PO) and IC MPPT control algorithm generally uses fixed step size. A small fixed step size will cause the tracking speed to decrease and tracking accuracy of the MPP will decrease due to large fixed step size. Therefore, this paper proposes N-IC MPPT algorithm that adjust automatically step size according to operating conditions. To improve tracking speed and accuracy, when operating point is far from maximum power point(MPP), step size uses maximum value and when operating point is near from MPP, step size uses variable step size that adjust according to slope of P-V curve. The validity of MPPT algorithm proposed in this paper prove through compare with conventional IC MPPT algorithm.