• Bulletin of the Korean Chemical Society
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• v.17 no.4
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• pp.349-352
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• 1996

Electrical capacitance at the interface between electrolyte solution and conducting polypyrrole film electrode was measured by a simple electrochemical method. The polymer films were electropolymerized in the presence of perchlorate (PPy-ClO4) or Nafion (PPy-Nafion) anions as the dopant ions. Both polymers exhibited large double layer capacitances which were slightly potential dependent within the potential range where the polymers are conductive. The capacitance increased in proportion to the polymer thickness. The specific capacitance were about 10 Fg-1and 44 F g-1 for PPy-Nafion and PPy-ClO4, respectively.

• Structural Monitoring and Maintenance
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• v.3 no.3
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• pp.297-314
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• 2016

As the study of internal corrosion of pipeline need a large number of experiments as well as long time, so there is a need for new computational technique to expand the spectrum of the results and to save time. The present work represents a new non-destructive evaluation (NDE) technique for detecting the internal corrosion inside pipeline by evaluating the dielectric properties of steel pipe at room temperature by using electrical capacitance sensor (ECS), then predict the effect of pipeline environment temperature (${\theta}$) on the corrosion rates by designing an efficient artificial neural network (ANN) architecture. ECS consists of number of electrodes mounted on the outer surface of pipeline, the sensor shape, electrode configuration, and the number of electrodes that comprise three key elements of two dimensional capacitance sensors are illustrated. The variation in the dielectric signatures was employed to design electrical capacitance sensor (ECS) with high sensitivity to detect such defects. The rules of 24-electrode sensor parameters such as capacitance, capacitance change, and change rate of capacitance are discussed by ANSYS and MATLAB, which are combined to simulate sensor characteristic. A feed-forward neural network (FFNN) structure are applied, trained and tested to predict the finite element (FE) results of corrosion rates under room temperature, and then used the trained FFNN to predict corrosion rates at different temperature using MATLAB neural network toolbox. The FE results are in excellent agreement with an FFNN results, thus validating the accuracy and reliability of the proposed technique and leads to better understanding of the corrosion mechanism under different pipeline environmental temperature.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.293-296
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• 2016

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

• Journal of Power Electronics
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• v.18 no.6
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• pp.1912-1919
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• 2018

The output capacitance of power semiconductor devices is important in determining the switching losses and in the operation of some resonant converter topologies. Thus, it is important to be able to accurately determine the output capacitance of a particular device operating at elevated power levels so that the contribution of the output capacitance discharge to switch-on losses can be determined under these conditions. Power semiconductor switch manufacturers usually measure device output capacitance using small-signal methods that may be insufficient for power switching applications. This paper shows how first principle methods are applied in a novel way to obtain more relevant large signal output capacitances of Gallium-Nitride (GaN) FETs using the drain-source voltage transient during device switch-off numerically. A non-linear capacitance for an increase in voltage is determined with good correlation. Simulations are verified using experimental results from two different devices. It is shown that the large signal output capacitance as a function of the drain-source voltage is higher than the small signal values published in the data sheets for each of the devices. It can also be seen that the loss contribution of the output capacitance discharging in the channel during switch-on correlates well with other methods proposed in the literature, which confirms that the proposed method has merit.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.134-142
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• 2010

A comparative study on the trade-off between the drive current and the total gate capacitance in double-gate (DG) and triple-gate (TG) FinFETs is performed by using 3-D device simulation. As the first result, we found that the optimum ratio of the hardmask oxide thickness ($T_{mask}$) to the sidewall oxide thickness ($T_{ox}$) is $T_{mask}/T_{ox}$=10/2 nm for the minimum logic delay ($\tau$) while $T_{mask}/T_{ox}$=5/1~2 nm for the maximum intrinsic gate capacitance coupling ratio (ICR) with the fixed channel length ($L_G$) and the fin width ($W_{fin}$) under the short channel effect criterion. It means that the TG FinFET is not under the optimal condition in terms of the circuit performance. Second, under optimized $T_{mask}/T_{ox}$, the propagation delay ($\tau$) decreases with the increasing fin height $H_{fin}$. It means that the FinFET-based logic circuit operation goes into the drive current-dominant regime rather than the input gate load capacitance-dominant regime as $H_{fin}$ increases. In the end, the sensitivity of $\Delta\tau/{\Delta}H_{fin}$ or ${{\Delta}I_{ON}}'/{\Delta}H_{fin}$ decreases as $L_G/W_{fin}$ is scaled-down. However, $W_{fin}$ should be carefully designed especially in circuits that are strongly influenced by the self-capacitance or a physical layout because the scaling of $W_{fin}$ is followed by the increase of the self-capacitance portion in the total load capacitance.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.6
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• pp.88-94
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• 2013

This paper proposes a capacitive touch switch using a switched-capacitor. The proposed method charges capacitance for measurement using the switched-capacitor until the voltage across the capacitance reaches a threshold voltage. As the proposed method uses the number of times being charged to measure the capacitance, the method has no relation with the operating frequency of the switched-capacitor. This paper also shows the quantization resolution of the proposed method is related to the capacitance in the switched-capacitor and the threshold voltage, i.e., the resolution is improved when the capacitance in the switched-capacitor is decreased and the threshold voltage is increased. Simulation result shows the method gives 31fF quantization resolution when the capacitance in the switched-capacitor is 50fF and threshold voltage is 80% of the supply voltage.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.16-21
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• 2001

A new technique to measure low level capacitance variations of a gyroscope is proposed. It is based on the improved CVC(capacitance to voltage converter) biased by a d.c. current source and the peak detector without any low pass filter. This setup of the measurement system makes it possible to provide higher speed of measurement and wide operation range. The d,c, drift of the conventional CVC and stray capacitances are automatically compensated. Key parameters that affect the performance of the measurement system are illustrated and computer simulation results are presented. The demonstrated measurement system for micromachined gyroscope applications shows a linearity of 0.99972 and a resolution of 0.67fF from 10 fF to 120 fF at 10 kHz.

• Journal of Power Electronics
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• v.10 no.3
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• pp.270-276
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• 2010

In this paper, a capacitance estimation scheme for DC-link capacitors for single-phase AC/DC PWM converters is proposed. Under the no-load condition, a controlled AC current (30[Hz]) is injected into the input side, which then causes AC voltage ripples at the DC output side. Or, a controlled AC voltage can be directly injected into the DC output side. By extracting the AC voltage/current and power components on the DC output side using digital filters, the capacitance value can be calculated, where the recursive least squares (RLS) algorithm is used. The proposed methods can be simply implemented with software only and additional hardware is not required. From the experiment results, a high accuracy estimation of capacitances less than 0.85% has been obtained.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.12
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• pp.1877-1879
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• 2012

Generally, stray capacitance is unnecessary element of designing circuit, because it can not be predicted by a designer. But we propose LC Resonant Circuit using stray capacitance of transformer. This method proposes miniaturization of circuit, because LC Resonant Circuit can be make simply to using stray capacitance instead of capacitor and size of transformer is reduced. Finally, we research aspect of dielectric heating by change of frequency and output voltage using developed converter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.348-348
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• 2005

High capacitance MLCC has been enabled through the use of nickel electrodes to produce thinner layers at acceptable costs. High capacitance MLCC devices offer significant advantages to electrolytics such as tantalum and aluminum ; Lower ESR for high frequency applications. Non-polarized. Many process improvement have enabled this technology Higher dielectric constants Thinner dielectric and electrode layers through BME More accurate layer construction. This study is high capacitance MLCC electrical propertics. reliability, Analysis on DOE(Design Of Experiment) of the electical propertics.