• 한국초전도ㆍ저온공학회논문지
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• 제20권1호
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• pp.19-22
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• 2018

The thermal and electrical properties of the conductor are critical parametersfor the design and optimization of the superconducting magnet. This paper presents simulation code to analyze electrical and thermal stability characteristics of the second generation (2G) high-temperature superconductor (HTS) by varying copper stabilizer thickness. Two types of commercial 2G HTS coated conductor tapes, YBCO and GdBCO were used in this study. These samples were cooled by Liquid Nitrogen ($LN_2$) having boiling at 77.3 K and an equivalent electrical circuit model for them is choosen and analysed in details. Also, an over-current pulse test in which a current exceeding a critical current was performed. From the simulation results, the influences of the copper stabilizer thickness on the stability characteristics of these samples are presented.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.530-534
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• 2017

Transparent film heaters employing silver nanowires (Ag NWs) have attracted increasing attention because of their widespread applications. However, the low thermal resistance of Ag NWs limits the maximum operating temperature of the Ag NW film heater. In this study, Ag NW film heaters with high mechanical and thermal stability were successfully developed. The thermal power-out characteristics of the Ag NW heaters were investigated as a function of the Ag NW density. The results revealed that the prepared flexible Ag NW heater possessed high thermal stability over $190^{\circ}C$ owing to ZnO encapsulation. This indicates that the Ag NW film with excellent thermal stability have remarkably high potential for use as electrodes in film heaters operating at high temperatures.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.895-900
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• 1997

A Quench in cable-in-conduit (CIC) conductors is often initiated by a disturbance such as strand motion that generates a highly localized normal zone in a strand or a few strands of the CIC conductors. The localized normal zone causes current and heat transfer between a disturbed strand and neighboring strands. Electrical and thermal contact characteristics between strands thus have an effect on the transient stability of the CIC conductors. In this paper the effect of contact characteristics between strands on the CIC conductor stability is presented based on the measured heat transfer characteristics of supercritical helium (SHe) for the local heating. The quench and recovery processes of the strands for the abrupt and highly localized disturbance are analyzed at the boundary between quench and recovery.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.287-288
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• 2005

In this study, we have investigated electro-optical characteristics of thermal and UV stressed TN cells on the rubbed polyimide surface. Mono-domain alignments of thermal stressed TN cells over temperature of liquid crystal isotropic phase were almost same that of no thermal stressed TN cells. Also, threshold voltage and response time of thermal stressed TN cells were same that of no thermal stressed TN cells. Finally, the residual DC voltage of the thermal stressed TN cell on the polyimide surface show decrease of characteristics as increasing thermal stress time. Therefore, thermal stability of TN cell was decreased by high thermal stress for the long times.

• 한국전기전자재료학회논문지
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• 제19권11호
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• pp.1033-1036
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• 2006

We have investigated electro-optical characteristics in three kinds of twisted nematic (TN) cells on the polyimide surface. The threshold voltage and the response time of thermal stressed TN cells were same that of no thermal stressed TN cells. There were little change of value in these TN cells. On the other hand, transmittance of no thermal stressed TN cells were better than that of thermal stressed TN cells. Transmittances of TN cells on the polyimide surface decreased by increasing thermal stress time. Moreover, the residual DC of the thermal stressed TN cells increased as increasing thermal stress temperature and time. Therefore, thermal stability of TN cells were decreased gradually by giving high thermal stress for a long time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1142-1145
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• 2004

ZnO surge arresters continuously endure the operating voltages during the operation course, and in the mean time, which need to withstand occasionally transient voltages of lightning and switching overvoltages. Under these voltages, the ZnO varistors inside arresters would have aging phenomena, one important result of aging phenomena is the increasing of resistive currents of varistors, which leads to the increasing of power losses of varistors. And the operating voltage is continuously applied on the ZnO varistors, there is a degradation phenomenon existing in ZnO varistors. When the degradation reaches a certain degree, then the arrester must stop operation. The degradation is related to the applied voltage ratio, the applied voltage ratio is high, the degradation is quickly. When the power loss is higher than the thermal dispersion ability of house of arrester, then the arrester will thermally breakdown. In this study the thermal stability characteristics of surge arresters for high power wil be discussed on the view point of watt losses and thermal breakdown.

• 한국전기전자재료학회논문지
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• 제35권3호
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• pp.246-254
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• 2022

Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.177-180
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• 2005

We have investigated electro-optical characteristics in three kinds of TN cells on the polyimide surface. Transmittance of no thermal stressed TN cells were better than that of thermal stressed TN cells. Also. the threshold voltage and the response time of thermal stressed TN cells were same that of no thermal stressed TN cells. There were little change of value in these TN cells. On the other hand. transmittances of TN cells on the polyimide surface decreased by increasing thermal stress time. Moreover. the residual DC of the thermal stressed TN cells on the polyimide surface showed the characteristics of thermal stressed TN cells were weakened as increasing thermal stress temperature and time. Therefore. thermal stability of TN cells were decreased gradually by giving high thermal stress for a long time.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.439-442
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• 2004

In this study, we investigated about electrooptics characteristic of three kinds of TN cell on the polyimide surface. Monodomain alignments of thermal stressed TN cell over temperature of liquid crystal isotropic phase were almost the same as that of no thermal stressed TN cells. However, the thermal stressed TN cells have many defects. Also, threshold voltage and response time of thermal stressed TN cells show the same performances as no thermal stressed TN cells. There were little changes of value in these TN cells. However, transmittances of TN cells on the polyimide surface decrease with increasing thermal stress time. Finally, the residual DC voltage of the thermal stressed TN cell on the polyimide surface shows decrease of characteristics as increasing thermal stress time. Therefore, the thermal stability of TN cell was decreased by high thermal stress for the long times.

• 한국재료학회지
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• 제11권9호
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• pp.776-780
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• 2001

$SiO_2$ and polycrystalline Si layers were sequentially grown on (100) Si. NiSi was formed on this substrate from a 20nm Ni layer or a 20nm Ni/5nm Ti bilayer by rapid thermal annealing (RTA) at $300~500^{\circ}C$ to compare thermal stability. In addition, MOS capacitors were fabricated by depositing a 20nm Ni layer on the Poly-Si/$SiO_2$substrate, RTA at $400^{\circ}C$ to form NiSi, $BF_2$ or As implantation and finally drive- in annealing at $500~800^{\circ}C$ to evaluate electrical characteristics. When annealed at $400^{\circ}C$, NiSi made from both a Ni monolayer and a Ni/Ti bilayer showed excellent thermal stability. But NiSi made from a Ni/Ti bilayer was thermally unstable at $500^{\circ}C$. This was attributed to the formation of insignificantly small amount of NiSi due to suppressed Ni diffusion through the Ti layer. PMOS and NMOS capacitors made by using a Ni monolayer and the SADS(silicide as a dopant source) method showed good C-V characteristics, when drive-in annealed at $500^{\circ}C$ for 20sec., and$ 600^{\circ}C$ for 80sec. respectively.