• Journal of the Korean Ceramic Society
• /
• v.50 no.5
• /
• pp.309-318
• /
• 2013

Graphene has attracted considerable attention since its first production from graphite in 2004, due to its outstanding physical and chemical properties. The development of production methodsfor large scale, high quality graphene films is an essentialstep toward realizing graphene applications such as transparent, conductive film. Chemical deposition methods, using metal catalystsand gaseous carbon sources, have been extensively developed for large area synthesis. In this paper, wereview recent progress ingraphene production, and survey the role of graphene electrodes in various electronic devices such as touch panels, solar cells, solid statelighting and microelectronic devices.

• Journal of Sensor Science and Technology
• /
• v.26 no.2
• /
• pp.122-127
• /
• 2017

Graphene grown on copper-foil substrates by chemical vapor deposition (CVD) has been attracting interest for sensor applications due to an extraordinary high surface-to-volume ratio and capability of large-scale device fabrication. However, CVD graphene has a polycrystalline structure and a high density of grain boundaries degrading its electrical properties. Recently, processes such as electropolishing for flattening copper substrate has been applied before growth in order to increase the grain size of graphene. In this study, we systemically analyzed the effects of the process condition of electropolishing copper foil on the quality of CVD graphene. We observed that electropolishing process can reduce surface roughness of copper foil, increase the grain size of CVD graphene, and minimize the density of double-layered graphene regions. However, excessive process time can rather increase the copper foil surface roughness and degrade the quality of CVD graphene layers. This work shows that an optimized electropolishing process on copper substrates is critical to obtain high-quality and uniformity CVD graphene which is essential for practical sensor applications.

• Applied Microscopy
• /
• v.47 no.3
• /
• pp.176-186
• /
• 2017

Two-dimensional (2D) materials have been studied widely owing to their outstanding properties since monolayer graphene was isolated in 2004. Especially, among 2D materials, phosphorene, a single atomic layer of black phosphorus (BP), has been highlighted for its electrical properties. This material can serve as a substitute for graphene, which has been revealed as a "semi-metal", in next-generation semiconductors. However, few-layer BP is prone to degradation under ambient conditions owing to its reactivity with oxygen and water, which results in the condensation of water droplets on the surface of the BP flakes. This causes charge transfer from the phosphorus atom to oxygen, resulting in the formation of phosphoric acid (oxide) and degrades the various properties of BP. Therefore, it is necessary to find passivation methods to prevent BP flakes from being degraded under ambient conditions. This review article deals with recent studies on passivation methods for BP and their performance against oxygen and water, effects on the electrical properties of BP, and the extent to how they protect BP.

• Polymer(Korea)
• /
• v.39 no.3
• /
• pp.468-474
• /
• 2015

Electrically conductive polymer nanocomposites were prepared by the inclusion of graphene-based nanofillers. Graphene oxide (GO) and reduced graphene oxide wrapped by poly(styrene sulfonate) (PSS-RGO) were used as nanofillers to make good dispersion with the aqueous dispersion of polystyrene (PS) particles. GO sheets were synthesized by the modified Hummers' method from graphite, and PSS-RGO sheets were prepared by the reduction of GO-dispersed PSS solution with hydrazine monohydrate. Morphology and properties of PS/GO and PS/PSS-RGO nanocomposites via latex technology were investigated. Both nanofillers showed well dispersed morphology in PS matrix. Rheological and electrical percolation thresholds were 0.28 and 0.51 wt% for GO, and 0.50 and 1.01 wt% for PSS-RGO respectively. It is speculated that PS/GO nanocomposites showed better conductivity than PS/PSS-RGO counterparts due to the partial recovery of GO by thermal reduction during molding.

• Advances in nano research
• /
• v.14 no.1
• /
• pp.1-15
• /
• 2023

Driven by the scaling down of transistor node technology, graphene became of interest to many researchers following the success of its fabrication as graphene nanoribbons (GNRs). However, during the fabrication of GNRs, it is not uncommon to have defects within the GNR structures. Scaling down node technology also changes the modelling approach from the classical Boltzmann transport equation to the quantum transport theory because the quantum confinement effects become significant at sub-10 nanometer dimensions. The aim of this study is to examine the effect of Stone-Wales defects on the electronic properties of GNRs using a tight-binding model, based on Non-Equilibrium Green's Function (NEGF) via numeric computation methods using MATLAB. Armchair and zigzag edge defects are also implemented in the GNR structures to mimic the practical fabrication process. Electronic properties of pristine and defected GNRs of various lengths and widths were computed, including their band structure and density of states (DOS). The results show that Stone-Wales defects cause fluctuation in the band structure and increase the bandgap values for both armchair GNRs (AGNRs) and zigzag GNRs (ZGNRs) at every simulated width. In addition, Stone-Wales defects reduce the numerical computation DOS for both AGNRs and ZGNRs. However, when the lengths of the structures increase with fixed widths, the effect of the Stone-Wales defects become less significant.

• Journal of Surface Science and Engineering
• /
• v.55 no.2
• /
• pp.84-90
• /
• 2022

With the growing interest in energy storage and conversion systems including secondary batteries, capacitors, and water electrolysis, various electrode materials are being developed to improve the energy efficiency. Among them, graphene is regarded as one of the promising candidates owing to its exceptional properties - large surface area, and excellent electrical conductivity. Herein, we report a facile one-step electrochemical approach to synthesize exfoliated graphene/Fe oxide compound. The effect of experimental conditions - the types of applied voltage, kinds of counter electrodes, acidity of electrolyte on the synthesis of graphene/Fe oxide compound is investigated.

• Journal of the Korean Chemical Society
• /
• v.58 no.6
• /
• pp.524-527
• /
• 2014

We report a simple yet efficient method to assemble large-scale aligned graphene nanoribbons (GNRs) with a width as small as 30 nm. The $V_2O_5$ nanowires (NWs) were aligned on a graphene surface via spraying a solution of the $V_2O_5$ NWs, and the graphene was selectively etched by the reactive ion etching method using the $V_2O_5$ NWs as a shadow mask. This process allowed us to prepare large scale patterns of the aligned GNRs on a $SiO_2$ substrate. The orientation of the aligned and randomly oriented GNRs was compared by the atomic force microscope (AFM) images. We achieved the highly aligned GNRs along the flow direction of the $V_2O_5$ NWs solution. Furthermore, we successfully fabricated a field effect-transistor with the aligned GNRs and measured its electrical properties. Since our method enable to prepare the aligned GNRs over a large area, it should open up new way for the various applications.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.90.2-90.2
• /
• 2012

Graphene has recently attracted significant attention because of its unique optical and electrical properties. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on Ni or Cu substrates. Among these techniques, CVD is superior to the others from the perspective of technological applications because of its possibility to produce a large size graphene. PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures, such as carbon nanotubes and nanosheets. Compared with thermal CVD, PECVD possesses a unique advantage of additional high-density reactive gas atoms and radicals, facilitating low-temperature, rapid, and controllable synthesis. In the current study, we report results in synthesizing of high-quality graphene films on a Ni films at low temperature. Controllable synthesis of quality graphene on Cu foil through inductively-coupled plasma CVD (ICPCVD), in which the surface chemistry is significantly different from that of conventional thermal CVD, was also discussed.

• Current Optics and Photonics
• /
• v.1 no.1
• /
• pp.7-11
• /
• 2017

In this study, multilayered graphene was easily transferred to the target substrate in one step using thermal release tape. The transmittance of the transferred graphene according to the number of layers was measured using a spectrophotometer. The sheet resistance was measured using a four-point probe system. Graphene formed using this transfer method showed almost the same electrical and optical properties as that formed using the conventional poly (methyl methacrylate) transfer method. This method is suitable for the mass production of graphene because of the short process time and easy large-area transfer. In addition, multilayered graphene can be transferred on various substrates without wetting problem using the one-step dry transfer method. In this work, this easy transfer method was used for dielectric substrates such as glass, paper and polyethylene terephthalate, and a sheet resistance of ~240 ohm/sq was obtained with three-layer graphene. By fabricating organic solar cells, we verified the feasibility of using this method for optoelectronic devices.

• Journal of the Korean Ceramic Society
• /
• v.49 no.4
• /
• pp.352-362
• /
• 2012

This paper explores the use of a variety of carbon nanoparticles to impart electrical, thermal conductivity, good frictional properties to silicon nitride matrices. We used the highly promising types of carbon as carbon nanotubes, exfoliated graphene and carbon black nanograins. A high-efficiency attritor mill has also been used for proper dispersion of second phases in the matrix. The sintered silicon nitride composites retained the mechanical robustness of the original systems. Bending strength as high as 700 MPa was maintained and an electrical conductivity of 10 S/m was achieved in the case of 3 wt% multiwall carbon nanotube addition. Electrically conductive silicon nitride ceramics were realized by using carbon nanophases. Examples of these systems, methods of fabrication, electrical percolation, mechanical, thermal and tribological properties are discussed.