• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.629-629
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• 2013

Graphene is a carbon based material and it has intriguing features, such as phenomenally strong, thin, flexible, transparent and conductive, those make it attractive for a broad range of applications.Unfortunately, graphene is extremely sensitive to contamination. When we fabricate graphene devices, electrical properties of graphene are altered [1], and the charge carrier mobility drops accordingly by orders of magnitude. This significant impact on electron mobility occurs because any surrounding medium could act as a dominant source of extrinsic scattering, which effectively reduces the mean free path of carriers [2,3]. The dominant contaminant is generated through fabrication stage by polymethyl methacrylate (PMMA) [4], or photo resist (PR). Surface contamination by these residues has long been a critical problem in probing graphene's intrinsic properties. If we clearly solve this problem, we can get highly performed graphene devices. Here, we will report on graphene cleaning process by Induced Coupled Plasma (ICP). We demonstrated how much decomposition of residue impact on improving electrical properties of graphene.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2022.04a
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• pp.184-185
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• 2022

This study researched the effect of graphene nanoribbons (0.05 wt%) on cement-based materials' mechanical and electrical properties. The results were compared with the ordinary Portland cement (OPC) paste and OPC paste with the same content of carbon nanotubes. The experiment results showed that after curing for 28 days, the compressive and splitting tensile strength of the sample with graphene nanoribbons were increased by 17.8% and 6.6% compared to OPC paste, and its reinforced effect for cement-based materials was superior to carbon nanotubes. Besides, due to the excellent electrical properties of graphene nanoribbons, the sample reinforced by graphene nanoribbons had a lower electrical resistivity (135.5 Ω·m) than OPC paste (418.5 Ω·m) and paste with carbon nanotubes (175.5 Ω·m). This proved the promising application of graphene nanoribbons on cement-based materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.67-67
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, exhibits fascinating electrical properties, such as a linear energy dispersion relation and high mobility in addition to a wide-range optical absorption and high thermal conductivity. Graphene's outstanding tensile strength allows graphene-based electronic and photonic devices to be flexible, bendable, or even stretchable. Recently many groups have reported high performance electronic and optoelectronic devices based on graphene materials, i.e. field-effect transistors, gas sensors, nonvolatile memory devices, and plasmonic waveguides, in which versatile properties of graphene materials have been incorporated into a flexible electronic or optoelectronic platform. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic material properties and recent progresses in applications of graphene to electronics and optoelectronics and discuss future outlook of graphene-based devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.474-474
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• 2011

Graphene is considered as a potential candidate for the key material in the ideal 2D nanoelectronics. Recently, it is reported that graphene has an interesting sensitivity to molecular adsorption on it. Such properties are believed to be enhanced by the existence of disorders and ripples inside graphene as well as by the interaction with the substrate underneath. Here, we report the effect of introducing structural disorders to the graphene on its electrical properties such as conductance, transconductance, low frequency noise, which can be successfully described by a simple model of the continuum percolation. In addition, the response of the graphene device to gaseous molecular adsorption was systematically investigated and the results were discussed along with the change in Raman spectra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.134-134
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• 2009

We studied electrochemical properties of $TiO_2$ photoelectrode based graphene for dye-sensitized solar cells(DSSC). Gaphene has good electric conductivity and it is very good transparent when this is coated on monolayer. we prepared photoelectrode by squeeze methode and researched photoelectrical properties of $TiO_2$ electrode base gaphene. DSSC based on graphene was obtained conversion efficiency of 5.4% under irradiation of AM 1.5(100 $mWcm^2$).

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.349-365
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• 2017

Graphene has attracted a lot of attentions due to the unique electrical and optical properties. Compared with the noble metal plasmons in the visible and near-infrared frequencies, graphene can support surface plasmons in the lower frequencies of terahertz and mid-infrared and it demonstrates an extremely large confinement at the surface because of the particular electronic band structures. Especially, the surface conductivity of graphene can be tuned by either chemical doping or electrostatic gating. These features make graphene a promising candidate for plasmonics, biosensing and transformation optics. Furthermore, the combination of graphene and metasurfaces presents a powerful tunability for exotic electromagnetic properties, where the metasurfaces with the highly-localized fields offer a platform to enhance the interaction between the incident light and graphene and facilitate a deep modulation. In this paper, we provide an overview of the key properties of graphene, such as the surface conductivity, the propagating surface plasmon polaritons, and the localized surface plasmons, and the hybrid graphene/metasurfaces, either metallic and dielectric metasurfaces, from terahertz to near-infrared frequencies. Finally, there is a discussion for the current challenges and future goals.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.53-58
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• 2013

Graphene-based polymer nanocomposites are very promising candidates for new high-performance materials that offer improved mechanical, barrier, thermal and electrical properties. Herein, an approach is presented to improve the mechanical, thermal and electrical properties of unsaturated polyester resin (UPR) by using graphene nano sheets (GNS). The extent of dispersion of GNS into the polymer matrix was also observed by using the scanning electron microscopy (SEM) which indicated homogeneous dispersion of GNS through the UPR matrix and strong interfacial adhesion between the GNS and UPR matrix were achieved in the UPR composite, which enhanced the mechanical properties. The tensile strength of the nanocomposites improved at a tune of 52% at a GNS concentration of 0.05%. Again the flexural strength also increased around 92% at a GNS concentration of 0.05%. Similarly the thermal properties and the electrical properties for the nanocomposites were also improved as evidenced from the differential scanning caloriemetry (DSC) and dielectric strength measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.85-85
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• 2010

Graphene, the building block of graphite, is one of the most promising materials due to their fascinating electronic transport properties. The pseudo-two-dimensional sp2 bonding in graphene layers yields one of the most effective solid lubricants. In this poster, we present the correlation between electrical and nanomechanical properties of graphene layer grown on Cu/Ni substrate with CVD (Chemical Vapor Deposition) method. The electrical (current and conductance) and nanomechanical (adhesion and friction) properties have been investigated by the combined apparatus of friction force microscopy/conductive probe atomic force microscopy (AFM). The experiment was carried out in a RHK AFM operating in ultrahigh vacuum using cantilevers with a conductive TiN coating. The current was measured as a function of the applied load between the AFM tip and the graphene layer. The contact area has been obtained with the continuum mechanical models. We will discuss the influence of mechanical deformation on the electrical transport mechanism on graphene layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.344.1-344.1
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• 2016

Recently, graphene has shown great characteristic of electrical conductivity, strength, and elasticity. However, due to edge unstable and metallic properties, it is difficult to use as a semiconductor devices. The solution of such problems has been sought a way to use the boron nitride in a stacked layer structure. By graphene and boron nitride stacked layer structure on silicon substrate, the electron mobility is improved and deteriorated results in semiconductor properties. In this study, to make layered structure, we developed direct synthesis method for graphene on boron nitride. By using Raman technique, the directly stacked layer structure is in good agreement with measurements on each of the attributes.