• 한국안전학회지
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• 제27권4호
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• pp.38-42
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• 2012

This paper describes electrical fire on residential environment such as apartment and detached house caused by defect of interior wiring. We carried out experimental study on short circuit characteristics by the interior wiring length. We were measured arc current, arc energy and interrupting time of earth leakage current circuit breaker(ELB), when an interior wiring break out short circuit in residential environment. From the experiment results, the longer of the interior wiring, the magnitude of arc current decreased and the interrupting time of ELB increased. When applied the A maker's ELB, the strength of arc current and interrupting time of ELB was 254 A and 245 ms respectively at 30 m interior wiring length. In 3 m interior wiring length, arc current and interrupting time was 716 A and 4.24 ms respectively. Arc energy was dependent on the magnitude of arc current and the interrupting time of ELB, the longer the interrupting time, arc energy increasing. In this paper, minimum arc energy was 277 J using C maker's ELB and 3 m interior wiring length(arc current 283 A, interrupting time of breaker 6.28 ms). Therefore in the residential environment, short circuit caused by defect of the interior wiring lead to electrical fire.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.462-467
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• 2003

As for control systems, many researchers give optimal structures of the finite-word-length compensator. D. Williamson solved a fixed-point case against colored noise for the LQG problem. Recently, one of the authors derived an optimal filter against colored noise. And consequently, we apply the result to a twodegree-of-freedom control system in this paper. In addition the perturbation of the coefficients is considered. Furthermore, simulation results indicate this method gives better than other structures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.143-146
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• 2000

We studied effects of alkyl($C_nH_{2n+1}$) chain length on characteristics of poly(3-alkylthiophene) electroluminescent diodes. Among the poly(3-alkylthiophene), poly(3-hexylthiophene)(n=6) and poly(3- octyIthiophene)(n=8) were mainly used for the emitting layer of the diode. The result of experiment, the emission intensity of poly(3-alkylthiophene) electroluminescent diodes depends on the alkyl chain length. Strong emission is obtained from a poly(3-alkylthiophene) diodes of long alkyl side chain length. Emission intensities are enhanced by a confinement of carriers on a main chain with a long interchain distance caused by a long alkyl side chain.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.246-250
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• 1996

In optical soliton transmission systems with nonlinear dispersive materials, which is utilized for ultra-long and high bit rate transmission, it is shown that the value of initial time difference between adjacent solitons is analyzed for optimum bit rate. The method is inducted by uncorrelation condition with minimum interaction forces in initial covariance coefficient between adjacent solitons. When the initial time difference is 6 times of soliton pulse width by the results, it is shown that the reliability is maintained with more than 90% within transmission length of soliton period. multiplied by 93.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.318-321
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• 2002

This paper presents a proper condition to achieve high conversion efficiency using PC1D simulator on sri-crystalline Si solar cells. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 $\mu\textrm{m}$, front surface recombination velocity 100 cm/s, sheet resistivity of emitter layer 100 Ω/$\square$, BSF thickness 5 $\mu\textrm{m}$, doping concentration 5${\times}$10$\^$19/ cm$\^$-3/. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1094-1097
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• 2003

In this paper, the cavity-length-dependent spectral and temporal characteristics of a V-groove AlGaAs-GaAs quantum wire (QWR) laser at each subband were investigated. At short cavity lasers less than $300{\mu}m$, a discrete wavelength switching from the n=1 to the n=2 subband occurred due to the increased threshold gain, resulting from the increased cavity loss. Using the characteristic of the wavelength shift from n=1 to the n=2 subband with shortening the cavity length, ultrafast lasing behaviors under gain switching at the n=1 and the n=2 subband transition were demonstrated and compared.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.33-36
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• 2004

탄소 도핑$(5{\times}10^{19}\;cm^{-3})$된 p-type GaAsSb 에피층 위에, Ti/Pt/Au, Pd/Au, Pd/Ir/Au를 이용한 다층 오믹 접촉을 제작하였다. MOCVD(metal-organic chemical vapor deposition)를 이용하여 성장시킨 이 p-GaAsSb의 정공 이동도는 탄소의 도핑 농도가 매우 높음에도 불구하고, $50\;cm^2/Vs$로 측정되었다. 오믹 접촉의 전기적 특성을 측정하기 위하여 TLM(Transfer length method)를 이용하였다. Pd/Ir/Au을 이용한 오믹접촉의 specific contact resistivity는 $10^{-8}\;ohm-cm^2$ 보다 작은 수치를, transfer length는 100 nm보다 작은 수치를 보였으며, Ti/Pt/Au을 이용한 ohmic contact의 specific contact resistivity는 $10^{-7|\;ohm-cm^2$ 보다 작은 수치를, transfer length는 400 nm보다 작은 수치를 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제8권1호
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• pp.21-25
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• 2007

A two-dimensional TCAD MEDICI simulator was used to examine the voltage transfer characteristics, on-off switching properties and latch-up of a CMOS inverter as a function of the n-channel length and doping levels. The channel in a LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of a CMOS inverter. The digital logic levels of the output and input voltages were analyzed from the transfer curves and circuit operation. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• 전기학회논문지
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• 제56권12호
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• pp.2221-2225
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• 2007

Hollow-type microneedle array can be used for painless, continuous and stable drug delivery through a human skin. The needles must be sharp and have sufficient length in order to penetrate the epidermis. An array of hollow-type silicon microneedles was fabricated by using deep reactive ion etching and HNA wet etching with two oxide masks. Isotropic etching was used to create tapered tips of the needles, and anisotropic etching of Bosch process was used to make the extended length and holes of microneedles. The microneedles were formed by three steps of isotropic, anisotropic, and isotropic etching in order. The holes were made by one anisotropic etching step. The fabricated microneedles have $170{\mu}m$ width, $40{\mu}m$ hole diameter and $230{\mu}m$ length.

• 한국통신학회:학술대회논문집
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• 한국통신학회 1991년도 추계종합학술발표회논문집
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• pp.205-209
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• 1991

The conventional modeling equations for planar MOSFET can not be directly used for zero or minus junction depth concave MOSFET. In this paper, we suggest a new model which can simulate the electrical characteristics of concave MOSFET. The threshold voltage modeling was achieved using the charge sharing method considering the relative difference of source and drain depletion widths. To analyze the ID-VDS characteristics, the conventional expressions for planar MOSFET were employed with the electrical channel length as an effective channel length and the channel length modulation factor as ${\alpha}$ΔL. By comparing the proposed model with experimental results, we could get reasonably similar curves and we proposed a concave MOSFET conditiion which shows no short channel effect of threshold voltage(V${\gamma}$).