• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.17 no.5 s.122
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• pp.448-455
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• 2007

As Decentralized Generation(DG) becomes more reliable and economically feasible, it is expected that a higher application of DG units would be interconnected to the existing grids. This new market penetration of DG technologies is linked to a large number of factors like technologies costs and performances, interconnection issues, safety, market regulations, environmental issues or grid connection constrains. This paper describes the procedures and results for the mechanical, electrical, and environmental tests of MGT on actual grid-connection under Korean regulations. As one of the achievements, the simulation model of MGT was developed, so that it will be able to analyze or propose new distributed generation system using MGT. The field test was conducted in order to respond to a wide variety of needs for noise reduction and utilization and its performance was evaluated in consideration of its operational problems. The MGT is successfully supplying electricity to Korean grids with satisfying various regulations. The suggested strategy and experience for the evaluation of the distributed generation will be used for the introduction of other distributed generation technologies into the grid in the future.

• Journal of Computing Science and Engineering
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• v.8 no.3
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• pp.129-136
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• 2014

This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.

• Journal of Power Electronics
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• v.18 no.2
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• pp.407-417
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• 2018

A novel family of Buck mode three-level direct ac converters with a high frequency link is proposed. These converters can transfer an unsteady high ac voltage with distortion into a regulated sinusoidal voltage with a low THD at the same frequency. The circuit configuration is constituted of a three-level converter, high frequency transformer, cycloconverter, as well as input and output filters. The topological family includes forward, push-pull, half-bridge, and full-bridge modes. In order to achieve a reliable three-level ac-ac conversion, and to overcome the surge voltage and surge current of the cycloconverter, a phase-shifted control strategy is introduced in this paper. A prototype is presented with experimental results to demonstrate that the proposed converters have five advantages including high frequency electrical isolation, lower voltage stress of the power switches, bi-directional power flow, low THD of the output voltage, and a higher input power factor.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1459-1462
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• 2008

In this paper we describe solutions to address critical challenges in direct fabrication of amorphous silicon thin film transistor (TFTs) arrays for active matrix flexible displays. For all flexible substrates a manufacturable handling protocol in automated display-scale equipment is required. For metal foil substrates the principal challenges are planarization and electrical isolation, and management of stress (CTE mismatch) during TFT fabrication. For plastic substrates the principal challenge is dimensional instability management.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1062-1065
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• 2002

We demonstrate the MMIC(monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 ㎓ local oscillator signals from 14.5 ㎓ input signals. These devices were designed and fabricated by using the MMIC integration process of 0.1 $\mu\textrm{m}$ gate-length PHEMTs (pseudomorphic high electron mobility transistors). The measurements showed S$\_$11/ of -9.2 dB at 14.5 ㎓, S/sub22/ of -18.6 dB at 29 ㎓ and a minimum conversion loss of 18.2 dB at 14.5 ㎓ with an input power of 6 dBm. The fundamental signal of 14.5㎓ was suppressed below 15.2 dBc compared with the second harmonic signal at the output port, and the isolation characteristics of the fundamental signal between the input and the output port were maintained above 30 dB in the frequency range of 10.5 ㎓ to 18.5 ㎓.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.179-183
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• 2000

For a ground plane in high-temperature superconducting ramp-edge junction devices, YBa$_2$Cu$_3$O$_{7-{\delta}}$/SrTiO$_3$/YBa$_2$Cu$_3$O$_{7-{\delta}}$ multilayer structures were fabricated using pulsed laser deposition and ECR ion milling. Various process parameters were adjusted to enhance the device characteristics. By etching the STO layer to form a tapered edge of about 15$^{\circ}$ and in-situ RF plasma treatment of bottom YBCO surface prior to deposition of top YBCO, the top-to-bottom YBCO showed T$_c$ of 75${\sim}$80 K and I$_c$ of about 40 mA through holes. It was found that the deposition of bottom YBCO at a reduced laser repetition rate of 1Hz increased the T$_c$ of top YBCO to 79.9 K. The resistivity of 570 layer was about 10$^6$ ${\Omega}$cm at 60 K, which ensures good electrical isolation between successive YBCO layers.

• Journal of IKEEE
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• v.19 no.1
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• pp.41-44
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• 2015

Silicon trench process for bulk fin field effect transistor (finFET) is suggested without using chemical mechanical polishing (CMP) that cause contamination problems with chemical stuff. This process uses thickness difference of photo resistor spin coating and silicon nitride sacrificial layer. Planarization of silicon oxide and silicon trench formation can be performed with etching processes. In this work 50 nm silicon trench is fabricated with AZ 1512 photo resistor and process results are introduced.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1137-1139
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• 1999

저가의 우수한 성능을 갖는 적외선 영상표시 소자 구현에 적합한 마이크로 볼로미터를 MEMS 기술을 사용하여 제작하였다. 작은 열질량을 갖는 마이크로미터 단위의 열적고립 구조(thermal isolation structure) 제작은 폴리이미드(PI2611)를 희생층으로 사용하여 최종적으로 ashing공정 단계에서 폴리이미드를 제거하여 마이크로 볼로미터 구조를 완성하였다. 이 때의 구조층으로는 PECVD 질화실리콘($SiN_x$) 박막, 감지층으로 산화바나듐($VO_x$) 박막을 사용하였다. 본 연구에서는 폴리이미드 패턴 형성시 건식식각 공정조건 변수에 따라서 패턴의 기울기를 조절하여 폴리이미드 측면에서 발생되는 불 균일한 박막 증착과 패터닝 문제를 개선하였다. 또한 저응력의 질화실리콘 박막을 사용하여 잔류응력에 의한 열적고립 구조의 뒤틀림 현상을 완화하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.5
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• pp.1093-1101
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• 2017

Microgrid as a unit component consisting a smart grid is an isolated system, which has a decentralized power supply system. This paper proposes an electrical isolation of the microgrid from the utiliy grid based on a power conditioning system, and also proposes an operation method maintaining the isolated state efficiently using diverse distributed energy resources such as renewable energy sources and energy storage system. The proposed system minimizes the influence of the grid connection on the internal load though a phase detection and synchrnoization to the utiligy grid and the microgrid can be stable even if the grid is failed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.574-581
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• 2002

Microstrip $8{ imes}2$ sub-array antennas for a extension to active phased array antennas are designed, fabricated and measured for TX/RX dual operation in satellite communication and a reception of satellite broadcasting. For the frequency range from 11.7 to 12.75 GHz for RX and from 14 to 14.5 GHz for TX, two orthogonal linear polarizations of ${pm}45^{\circ}$ are used to transmit and receive simultaneously with one radiator. They adopt dual resonance between two patches for wideband characteristics in RX band and show isolation characteristics over 20 dB. An electrical beam tilt of $30^{\circ}$ is achieved and a tapered power distribution, narrow element spacing are used for the purpose of low side-lobe characteristics.