• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.106-114
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• 1994

The local oxidation of silicon (LOCOS) technology, which uses a silicon nitride film as an oxidation mask and a pad oxide beween the silicon nitride and the silicon substrate, has been widely used in integrated circuits for process simplicity. But, due to long brid's beak length, there are difficulties in scabilities. Many advanced isolation techniques have been wuggested for the feduction of bird's beak length. In this paper, we presented reduced bird's beak length using the polybuffered oxide and the silicon nitride as the sidewall. Also, investigating the electrical behavior of the parasitic Al-gate MOSFET on LOCOS, we proved the validity for new isolation process.

• Journal of Electrical Engineering and Technology
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• v.4 no.3
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• pp.405-409
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• 2009

A polarization-independent multiwavelength-switchable fiber filter is proposed based on a polarization beam splitter and fiber coupler, which can function as a polarization-independent transmission or reflection-type interleaving filter. The proposed filter consists of a polarization beam splitter and a Sagnac birefringence loop composed of a 50:50 coupler, high birefringent fibers, and two quarter-wave plates. In the proposed filter, a transmission-type interleaver with a channel isolation > 18 dB or a reflection-type one with a channel isolation of ${\sim}3$ dB, whose channel spacing and switching displacement were 0.8 and 0.4 nm in common, respectively, could be obtained. A channel interleaving operation could be performed by the proper control of waveplates within the Sagnac birefringence loop.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.43-49
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• 1997

The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.

• Journal of IKEEE
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• v.22 no.3
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• pp.548-557
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• 2018

In this paper, Asynchronous Self-Power Gating technique (ASPG) is used to reduce consumption power in asynchronous digital watch application. The power gating control signal is automatically generated by internal system operation characteristics instead of using replica circuit delay or four-phase handshaking protocol. Isolation cell is designed to insert it between power gating domain and normal operation domain. By using self-power gating circuit, asynchronous digital watch application consumes very low power and maintains data during sleep mode. The comparison results show the proposed ASPG technique saves leakage power up to 40.47% and delay time is reduced to 71% compared to the conventional circuit.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.173-178
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• 2015

In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.7-18
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• 2002

Single-ended differential RF circuit topologies fully utilizing complementary characteristics of both NMOS and PMOS are proposed, which have inherent advantage of both single-ended and differential circuits. Using this concept, we propose a CCPP (Complementary CMOS parallel push-pull) amplifier which has single-ended input/output with differential amplifying characteristics, leading to more than 30 dB improvement on $IIP_2$. In addition, complementary resistive mixer is also proposed, which provides not only differential IF outputs from single-ended RF input, but much better linearity as well as isolation characteristics. Experimental results using $0.35{\;}\mu\textrm{m}$ CMOS process show that, compared with conventional NMOS resistive mixer, the proposed mixer shows 15 dB better LO-to-IF isolation, 4.6 dB better $IIP_2$, and 4.5 dB better $IIP_3$performances.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.1339-1341
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• 2000

This paper presents a new PWM DC/DC converter with multi-output using single secondary winding, which has two output characteristics of the isolation and non-isolation simultaneously. The proposed converter topology is consisted of the only one switch and single secondary winding. The proposed converter, therefore, has advantages not only low cost but also high power density. Operating principal of the proposed converter topology with conventional ZVT (Zero-Voltage-Transition) is illustrated in detail and the validity of the converter is verified with several interesting simulation results.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.189-192
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• 2009

The leakage current in a CMOS image sensor (CIS) can have various origins. Leakage current investigations have focused on such things as cobalt-salicide, source and drain scheme, and shallow trench isolation (STI) profile. However, there have been few papers examining the effects on leakage current of nitride stringers that are formed by gate sidewall etching. So this study reports the results of a series of experiments on the effects of a nitride stringer on real display images. Different step heights were fabricated during a STI chemical mechanical polishing process to form different nitride stringer sizes, arsenic and boron were implanted in each fabricated photodiode, and the doping density profiles were analyzed. Electrons that moved onto the silicon surface caused the dark leakage current, which in turn brought up the speckle defect on the display image in the CIS.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.135-136
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• 2006

In this paper, isolation strategies for improving broadband circuit performance and preventing noise arising from circuit component coupling are presented. Equivalent circuit parameters, including parasitic elements, are determined for capacitor and inductor structures. The effects of the relative position of the components with regard to a ground plane are considered in the equivalent circuits. Novel meshed ground structures are investigated to determine a configuration that improves the overall circuit performance.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.860-868
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• 2016

A bidirectional DC-DC converter (BDC) is an indispensable electrical unit for the electric vehicles (EVs). High efficiency, high power density, isolation, light weight and reliability are all essential requirements for BDC. In this paper, a 3 kW BDC for the battery charger of EVs is proposed. The proposed converter consists of a half-bridge structure on the primary side and an isolation transformer and a synchronous rectifier structure on the secondary side. With this topology, minimum number of switching devices are required for bidirectional power flow between the two dc buses of EVs. The easy implementation of the synchronous rectification gives advantages in terms of efficiency, cost and flexibility. The proposed BDC achieves high efficiency when operating in both modes (step-up and step-down). A 3 kW prototype is implemented to verify theoretical analysis and the performance of the proposed converter.