• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.41-47
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• 1999

In this paper, we report 3D-simulations of a plasma etching process by employing cell-removal algorithm takes into account the mask shadow effect os well as spillover errors. The developed simulator haas an input interface to take not only an analytic form but a Monte Carlo distribution of the ions. The graphic user interface(GUI) was also built into the simulator for UNIX environment. To demonstrate the capability of 3D-SURFILER(SURface proFILER), we have simulated for a typical contact hole structure with 36,000($30{\times}40{\times}30$) cells, which takes about 20 minutes with 10 Mbytes memory on sun ultra sparc 1. as an exemplary case, we calculated the etch profile during the reactive ion etching(RIE) of a contact hole wherein the aspect ratio is 1.57. Furthermore, we also simulated the dependence of a damage parameter and the evolution of topography as a function of the chamber pressure and the incident ion flux.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.7-12
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• 2008

This paper presents a lateral resistive contact RF MEMS switch using comb drive. Our goal was to fabricate the RF MEMS switch with high reliability and good RF characteristics for front end module in wireless transceiver system. Therefore, comb drive is used for large contact force in order to achieve low insertion loss and small off-state capacitance in order to achieve high isolation. The single crystalline silicon is used for mechanical reliability. As a result, the developed switch showed insertion loss less than 0.44 dB at 2 GHz, isolation greater than 60 dB, and low actuation voltage at 26 V.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.168-174
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• 2013

In this study, low-cost, high-speed deposition, excellent processability, high mechanical strength and electrical conductivity, chemical stability and corrosion resistance of stainless steel to meet the obsessive-compulsive (0.1 mm or less) were selected CrN thin film. new price reduction to sputter deposition causes - the possibility of sublimation source for inductively coupled plasma Cr rods were attempts by DC bias. 0.6 Pa Ar inductively coupled plasmas of 2.4 MHz, 500 W, keeping Cr Rod DC bias power 30 W (900 V, 0.02 A) is applied, $N_2$ flow rate of 0.5, 1.0, 1.5 sccm by varying the characteristics of were analyzed. $N_2$ flow rate increases, decreases and $Cr_2N$, CrN was found to increase. In addition to corrosion resistance and contact resistance, corrosion resistance, electrical conductivity was evaluated. corrosion current density than $N_2$ 0 sccm was sure to rise in all, $N_2$ 1 sccm at $4.390{\times}10^{-7}$ (at 0.6 V) $A{\cdot}cm^{-2}$, respectively. electrical conductivity process results when $N_2$ 1 sccm 28.8 $m{\Omega}/cm^2$ with the lowest value of the contact resistance was confirmed that came out. The OES (SQ-2000) and QMS (CPM-300) using a reactive deposition process to add $N_2$ to maintain a uniform deposition rate was confirmed that.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• Korean Journal of Acupuncture
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• v.26 no.2
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• pp.1-13
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• 2009

Objective: Optical Coherence Tomography (OCT) has emerged as an important optical imaging modality in non-invasive medical diagnostics. Hence, the aim of this study is to measure the similarity of the diagnosis by a traditional method using doctor's hand for feeling of pulse and by the non-contact/non-invasive pulse analyzing system using OCT on Chon(寸), Kwan(關), Chuk(尺). Method: Four korean medical doctors and the non-contact/non-invasive pulse analyzing system using OCT have measured the rapidity, the dimension, and the power of pulse waves of 25 volunteers. First, four korean medical doctors measured pulse waves of volunteers. During measuring, four doctors were separated from each other and so were volunteers. And then, the pulse waves of volunteers were measured by OCT. This was performed on the right Chon(寸), Kwan(關), Chuk(尺). Results: The study showed that the traditional method and the OCT based method had the 88% matches on the values of the slow and rapid pulse condition (遲數), 64% matches on the values of the small and big pulse condition(微細弱緩大[洪]), and 72% matches on the values of the weak and strong pulse condition(虛實). Conclusions: Based on the high similarities of the measurements of two approaches, we suggest that the OCT based pulse diagnosis method is useful for compensating the traditional method for the pulse diagnosis.

• Journal of the Korean Society of Safety
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• v.22 no.4
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• pp.26-31
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• 2007

According to the statistical analysis on the electrical fire of 2005 years, most of electrical fire is generated from short circuit(4,985 cases), overcurrent(755 cases) leakage current(391 cases), poor contact(378 cases), disconnection(36 cases) on the electrical wiring device. The researches for the fire hazard about normal electric wiring have already been progressing in the advanced country such as USA and Japan, but Comparative study of the disconnection has not been conducted. Therefore, in this paper, we have simulated the thermal analysis for electrical wire according to deteriorating time in a normal state and disconnection with electrical wire using the electrical-thermal finite element method(Flux 3D). This paper acquire basis data of electricity fire signal by disconnection and wish to help for electrical fire cause diagnosis business.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.67-67
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• 2005

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.173-178
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• 2003

In this paper, we studied the physical and electrical characteristics of $\textrm{WSi}_{x}$ thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition Process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at $680^{\circ}C$. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0~4.2$\Omega$/$\square$, but give the tendency in the decrement of stress by 0.27~0.3 E10dyne/$\textrm{cm}^2$. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33~16.43$\mu$$\Omega$-$\textrm{cm}^2$, when applying DCS post flow and increasing deposition temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.757-760
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• 2004

Shaking beam을 이용한 초음파 선형모터는 모터 구동부에서 발생하는 타원궤적이 선형 slider 와 마찰이 되어 선형운동을 발생시킨다. 이러한 초음파 선형모터에서 설계변수는 모터의 효율과 추력(thrust force) 등 동특성을 결정한다. 특히 초음파 모터 동작부의 tip 과 선형 slider 의 contact point와 압착은 모터의 속도, 추력 동작 주파수, 효율에 직접적인 영향을 주는 중요한 parameter 로 작용된다. 본 연구에서는 모터와 선형 slider 의 압착과 contact point둥의 설계변수가 초음파 선형 모터의 성능에 주는 영향을 고찰하였다. 모터으구동부와 선형 slider 사이의 압착력 ($10N{\sim}50N$)과 4가지 곡률을 갖는 tip을 설계변수로 취하였다. Tip 의 형태에 따른 곡률과 모터 구동부와 선형 slider 사이의 압착력 변화에 따른 모터의 동작특성이 변화되는 것을 확인할 수 있었다.