• Journal of the Korean Society of Safety
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• v.30 no.5
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• pp.1-7
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• 2015

This paper is aimed to analyze the electrical and thermal signal such as ignition possibility, ignition time, thermal characteristics and arc fault power that are associated with electrical fire in case of the occurrence of series arc at IV wiring used for interior wiring at commercial power source. In order to analyze the signal, series arc was induced by generating the constant vibration through vibrating device in the one phase (R phase) and ignition possibility was analyzed along the condition of current value by adding cotton material to the contact point of wiring. The ignition time is shortened as the electric current value increased, burning time is not associated with current value and the temperature rose up to $740^{\circ}C$ though it was not ignited. It was checked out that the temperature was the energy source enough that can generate the fire related with insulation aging of wiring and the inflammable. The possibility of electrical fire by series arc was shown as more than 12% at 5A, more than 42% at 20A and arc showed 27W at 5A, 180W at 20A. It was confirmed that the possibility of electrical fire exists at the condition as above and the circuit breaker did not operate. This data can be used as the reference value for the investigation of electrical fire or development of the circuit breaker.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.8
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• pp.14-18
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• 2018

Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.104-104
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.81-81
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.51-51
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.65-66
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• 1996

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.29-33
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• 2003

Material and electrical properties of copper-based ohmic contacts on n-type 4H-SiC were investigated for the effects of the post-annealing and the metal covering conditions. The ohmic contacts were prepared by sequential sputtering of Cu and Si layers on SiC substrate. The post-annealing treatment was performed using RTP (rapid thermal process) in vacuum and reduction ambient. The specific contact resistivity ($p_{c}$), sheet resistance ($R_{s}$), contact resistance ($R_{c}$), transfer length ($L_{T}$), were calculated from resistance (RT) versus contact spacing (d) measurements obtained from TLM (transmission line method) structure. The best result of the specific contact resistivity was obtained for the sample annealed in the reduction ambient as $p_{c}= 1.0 \times 10^{-6}\Omega \textrm{cm}^2$. The material properties of the copper contacts were also examined by using XRD. The results showed that copper silicide was formed on SiC as a result of intermixing Cu and Si layer.

• Fire Science and Engineering
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• v.18 no.4
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• pp.57-63
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• 2004

We investigated heat properties of connection terminal in residual current protective devices(RCD) according to contact pressure for low voltage appliance. And we analyzed voltage and current waveform and oxide propagation when the poor-contact happened between terminal and wire. When contact pressure between terminal and connection wire was not applied, the heat was generated and an oxide was formed on the surface of the wire. The temperature of the insulation surrounding terminal was ascended sharply by poor-contact, micro-sparks and continuous arc sound happened in interior terminal. When the poor-contact by vibration occurred inner conductor of terminal and wire, an oxide was propagated on contact surface and the temperature was increased at 869℃. Thus, we found that the risk of electrical disaster is high in terminal and connection wire parts.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.551-555
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• 2010

Electrowetting is a versatile tool to handle tiny droplets and forms a backbone of digital microfluidics. Numerical analysis is necessary to fully understand the dynamics of electrowetting, especially in designing electrowetting-based devices, such as liquid lenses and reflective displays. We developed a numerical method to analyze the general contact-line problems, incorporating dynamic contact angle models. The method is based on the conservative level set method to capture the interface of two fluids without loss of mass. We applied the method to the analysis of spreading process of a sessile droplet for step input voltages and oscillation of the droplet for alternating input voltages in electrowetting. The result was compared with experimental data. It is shown that contact line friction significantly affects the contact line motion and the oscillation amplitude. The pinning process of contact line was well represented by including the hysteresis effect in the contact angle models. In level set method, in the mean time, material properties are made to change smoothly across an interface of two materials with different properties by introducing an interpolation or smoothing scheme. So far, the weighted arithmetic mean (WAM) method has been exclusively adopted in level set method, without complete assessment for its validity. We viscosity, thermal conductivity, electrical conductivity, and permittivity, can be an alternative. I.e., the WHM gives more accurate results than the WAM method in certain circumstances. The interpolation scheme should be selected considering various characteristics including type of property, ratio of property of two fluids, geometry of interface, and so on.

• Proceedings of the KIEE Conference
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• 1999.07a
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• pp.455-457
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• 1999

In this paper, the wearing characteristics of current collecting shoes, interruption phenomena and contact resistances between collecting shoes and conductor rails are established as design parameters for development of the third rail current collector. An experimental analysis for established design parameters is performed as the materials of current collector shoe, contact force, sliding velocity and contact condition(dry/wet condition) between current collectors shoe and conductor rails. As a result of this study, the magnitude of contact force is in proportion to the amount of wear in the collecting shoe, but is in inverse proportion to the interruption and contact resistance between the collecting shoe and the conductor rail. And optimal values of design parameters are pre sented through analyzing the experimental results of the amount of wear, interruption and contact resistance.