• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.266-270
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• 2010

The effect of an Ar plasma treatment on polycarbonate substrates was investigated using $TiO_2$ coatings produced by reactive ion-beam assisted sputtering. The typical pressure used during sputtering was about $10^{-4}$ Torr. After the Ar plasma treatment, the contact angle of a water droplet was reduced from $88^{\circ}$ to $52^{\circ}$ and then further decreased to $12^{\circ}$ with the addition of oxygen into the chamber. The surface of the polycarbonate substrate hanged from hydrophobic to hydrophilic with these treatments and revealed its changing nano-scale roughness. The $TiO_2$ films on the treated surface showed various colors and periodic ordering dependant on the film thickness due to optical interference.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.12-12
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• 2010

The hall probe measurement system was used to measure the critical current distribution of superconducting coated conductor. The system consists of reel to reel moving apparatus, 7 array hall probe, a rotary encoder and permanent magnet. The magnetic field profile across the width of superconducting coated conductor using Bean's critical state model was calculated. The effect of various parameters of the formulas on the magnetic field distribution and the effect of shape and size of artificial defects, which were formed on the surface of SmBa2Cu3O7-d(SmBCO) coated conductor using laser marking system, on the hall probe magnetic field signal of the hall probe measurement system was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.65-65
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• 2010

본 논문은 이 중 직렬저항에서 한 부분을 차지하고 있는 전극부분과 리본부분의 접촉저항이 단순히 접촉 면적만이 아닌 위치에 따라서 다른 값을 지닌다는 전제에 연구를 하였다. 값이 작은 접촉저항의 명확히 눈에 보이는 결과를 위해서 접촉저항이 무한대가 되었을 때, 즉 전극과 리본이 박리가 된 상태를 기준으로 실험을 하였고, 그 이유를 증명하기위해 태양전지를 세부분으로 나누어 전류발생량을 측정하였고, 전극을 세부분으로 나눈 뒤 I-V curve를 측정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.732-737
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• 2012

This study made a specimen (contact surface size: $45\;mm{\times}0.02\;mm{\times}45{\sim}55\;mm$) with silicon rubber for low voltage cable with 50 phr silica filler. The electrification voltage of electrostatics were measured for different sizes of contact surface with the applied voltage of 10kV and the environmental settings of temperature ($25{\sim}40^{\circ}C$) and humidity (40~80%). The following conclusions were made. The electrification voltage of electrostatics decreased as the humidity increased. The electrification voltage of electrostatics increased as the temperature increased. The larger the surface size, the higher the electrification voltage of electrostatics. The property of the material had more effect on the relaxation time than the humidity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.654-658
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• 2009

For investigation of surface leakage currrent of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall, three kind of surface-leakage-test-patterns were fabricated. and we measured the surface leakage current of each patterns. In result of our work, the surface leakage current of pattern of which Schottky contact is formed on etched mesa wall is the largest. the leakage current through schottky contact on etched mesa wall is predominant in AlGaN/GaN heterostructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.364-365
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• 2008

배선용 차단기(MCCB)는 신속한 고장전류 차단과 전원시스템의 안정성을 확보하기 위해 배선시스템에 폭넓게 사용되고 있다. 배선용 차단기(MCCB)는 과부하 및 단로 등의 이상 상태시 전류를 차단하는 기구로, 오작동 시에는 중대한 사고를 초래한다. 따라서 배선용 차단기에 대한 보호성능의 항상, 신뢰성의 향상의 시장요구에 부응하기 위해 본 논문에서는 소호부 형상에 따른 차단성능을 파악하고 이를 통하여 성능향상을 이루고자 3차원 유한요소 프로그램(MAX-WELL)을 이용한 자계해석을 통해 차단성능 평가를 하였다. 이를 통하여 배선용 차단기의 소호부 설계시 차단성능 검증과 제품의 소형화 및 고성능화를 이끌고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.307-311
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• 2016

Although there are existing Residual Current Protective Device (RCD) including detect electric leakage and elements such as short circuit and surge, the occurrence of incidents caused by electric faults, including fire, are still constant. The purpose of this study is to analyze the causes of accidents through the electric field distribution in the interpretation of the fault contact breaker. Simulation results by the arc fault has shown the convergence of temperature and electric field to the defect. Through their simulation results, the main cause of erosion phenomena in circuit breaker bar is the electric arc by concentration of electric field not due to dissolve by temperature.

• Journal of Korea Foundry Society
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• v.12 no.3
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• pp.238-247
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• 1992

A carbon fiber(CF) reinforced Cu-10%Sn alloy matrix composite was successfully fabricated by squeeze casting method employing preheated graphite mold and proper process controlling factors. The matrix solidification microstructure of the Cu-10%Sn/CF composite reveals ${\alpha}-dendrite$ and ${\alpha}+{\delta}$ eutectoid. To compare the squeeze cast Cu-10%Sn/CF compostie with PM route fabricated Cu-graphite composites for electric contact material, mechanical wear and electrical arc wear tests were performed. Mechanical wear rate of the Cu-10%Sn/CF is much lower than that of the Cu-graphite composite. Weight loss with a variation of contact number in electrical arc wear tests shows a similar trend between the squeeze cast Cu-10%Sn/CF and PM Cu-graphite composites.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.314.1-314.1
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• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.