• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.2-490.2
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• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.427-432
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• 2003

In contact-type multiview 3 dimensional imaging systems, the optimum design parameters are not easily found because of difficulty in determining the size of viewing zone. Two factors related with the viewing zone, such as different view image patching and the widths of the viewing regions are discussed to explain the difficulty.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.32 no.6
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• pp.205-210
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• 1983

This paper presents a steady-state computer solution of the fundamental semiconductor one-dimensional transport equations, describing a single (metal-semiconductor) contact device, involving only one type of charge carrier. The computations are conveniently made by the

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.91.4-91
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• 1998

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1425_1426
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• 2009

In this study, commercially available polyethylene terephthalate(PET), which is widely used as a substrate of flexible electronic devices, was modified by dielectric barrier discharge(DBD) method in an air condition at atmospheric pressure, and aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET substrate by r. f. magnetron sputtering method. Surface analysis and characterization of the plasma-treated PET substrate was carried out using contact angle measurements, X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscopy (AFM). Especially the effect of surface state of PET substrate on some important properties of ZnO:Al transparent conducting film such as electrical and morphological properties and deposition rate of the film, was studied experimentally. The results showed that the contact angle of water on PET film was reduced significantly from $62^{\circ}$ to $43^{\circ}$ by DBD surface treatment at 20 min. of treatment time. The plasma treatment also improved the deposition rate and electrical properties. The deposition rate was increased almost linearly with surface treatment time. The lowest electrical resistivity as low as $4.97{\times}10^{-3}[\Omega-cm]$ and the highest deposition rate of 234[${\AA}m$/min] were obtained in ZnO:Al film with surface treatment time of 5min. and 20min., respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.480-480
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• 2008

Vacuum circuit breaker(VCB) is now emerging as an alternative of gas circuit breaker(GCB) which uses SF6 gas as insulating material whose dielectric strength is outstanding. But we have to reduce SF6 gas because SF6 gas is one of greenhouse gas and efforts to reduce greenhouse gas are now trend of the world. Therefore, we can say VCB is the optimal alternative of GCB because vacuum is environmentally friendly. The vacuum interrupter is the core part of VCB to interrupt arcing current. There are mainly two methods to extinguish arc. One is radial magnetic field (RMF) method and the other is axial magnetic field (AMF) method. We deals with RMF method in this paper. Compared with AMP, RMF arc quenching method has different principle to extinguish arc. In case of RMF method, pinch effect is much larger than AMF method. Because of pinch effect RMF type contact electrodes have the single large spot which is severly damaged and melted while AMF type contact electrodes have small and multiple spots which are slightly damaged and melted. To prevent contact electrode being damaged and melted from high temperature-arc, RMF method uses Lorentz force to move arc. In this paper we calculated and compared the arc driving force of two cases and we analyzed the force acting on each part of arc by means of commercial finite element method software Maxwell 3D. They have 3petals and we considered two cases. One is the case when fixed(upper) and movable(lower) contacts are in mirror arrangement (Case 1). The other is the case when one of two contacts (movable contact) is revolved at maximum angle as possible as it can be (Case 2). And at each case above, we analyzed arc driving force at two positions, position 1 is the closest to the center of contact and position 2 is near the edge of petal on fixed contact. As a result we could find that Case 2 generated stronger arc driving force than Case 1 at position 1. But at position 2 Case 1 generated stronger arc driving force than Case 2. This simulation method can contribute to optimizing spiral-type electrode designs in a view of arc driving force.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.112-114
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• 1988

W/WC-Cu/Ag contacts of 60wt%-40wt% base and contacts with additives(Ni, Co, C) of 1wt% below were prepared by a press-sinter-infiltrate process to compare with their physical properties and arc erosion characteristics. In physical properties, electrical conductivity of contacts with additive is lower than that of base contacts but hardness is higher. The results of arc test show that the erosion rate of contact with -0.1wt% Ni is decreased.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.608-611
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• 2000

We introduce Adaptive Fuzzy Impedance Controller for position and force control when robot contact with environment. Because Robot and environment was always effected by nonlinear conditions, it need to deal with parameter’s uncertainty. For solving this problem, it induced Fuzzy System in Impedance Control so fuzzy system is impedance’s stiffness gain. We apply adaptive fuzzy impedance controller in One-Link Robot System, it shows the good performance on desired position control and force control about contacting with arbitrarily environment.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1418-1419
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• 2007

In order to check the electric field distribution of polymer line post insulator, we performed electric field simulation according to state of water drops. Sea water is used to the contaminant. Electric field analysis is performed with change of contact angle, number and distance of water drops.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.