• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2007.11a
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• pp.332-337
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• 2007

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.61.2-61.2
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• 2010

Ag thick-film has usually been used for the front electrode of Si solar cells with the outstanding electrical properties. Ag paste consists of Ag powers, vehicles, frits and additives. Ag paste has broadly been screen-printed on the front side of Si wafer with the merits of low cost and simplicity. The optimal contact formation between Ag electrodes and Si wafer in the front electrode during a fast firing has been considered as the key factor for high efficiency. Although the content of frit in Ag pastes is less than 5wt%, it can profoundly influence the contact formation between Ag and Si under the fast firing. In this study, the effects of lead-free frits on the contacts between Ag and Si were studied with the thermal properties and compositions of various frits. Our experimental results showed that the electrical properties of cells were related to the interface structures between Ag and Si. It was found that current path of electrons from Si to Ag would be possible through the tunneling mechanism assisted by tens of nano-Ag recrystals on $n^+$ emitter as well as Ag recrystals penetrated into $n^+$ emitter layers. These preliminary studies will be helpful for designing the proper frits for the Ag pastes with considering the properties of various Si wafers.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.90.2-90.2
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• 2010

The coated metallic bipolar plates are getting attractive due to their good feasibility of mass production, low contact resistance, high electrical/thermal conductivity, low gas permeability and good mechanical strength comparing with graphite materials. Yet, metallic bipolar plates for polymer electrolyte membrane(PEM) fuel cells typically require coatings for corrosion protection. Other requirements for the corrosion protective coatings include low electrical contact resistance between metallic bipolar plate and gas diffusion layer, good mechanical robustness, low mechanical and fabrication cost. The authors have evaluated a number of protective coatings deposited on stainless steel substrate by electroplating. The coated metallic bipolar plates are investigated with an electrochemical polarization tests, salt dipping tests, adhesion tests for corrosion resistance and then the contact resistance was measured. The results showed that the selective samples electroplated with optimized method, satisfied the DOE target for corrosion resistance and contact resistance, and also were very stabilized in the typical fuel cell environments in the long-term.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.411-416
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• 2016

Benzothienobenzothiophene ($C_8-BTBT$) is a soluble organic small molecule material with high crystallinity resulting from its strong self-organizing properties. In addition, the high mobility and easy fabrication of $C_8-BTBT$ make it very attractive in terms of organic thin-film transistors. In this work, we made $C_8-BTBT$ thin films by using the zone-casting method; we also used an organic solvent to treat the devices with solvent vapor annealing to improve the electrical properties. As a result, we confirmed improved mobility, threshold voltage, and subthreshold swing after solvent vapor annealing. To prove the effect of solvent vapor annealing, we used the simultaneous extraction model to extract the contact resistance from the current-voltage curve. We confirmed that the electrical properties improved with decreasing contact resistance.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.10
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• pp.1465-1469
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• 2013

The resent developed high speed train called HEMU-430X (Highspeed Electric Multiple Unit - 430km/h eXperiment) recorded a 421.4 km/h in Kyoungbu high speed line in Korea. A verity of measurement systems are used to check the performance between pantograph and catenary system. An innovative measurement system is adopted to check the current of catenary wire in the track side during HEMU-430X test running. This paper presents the measurement results of catenary current in kyoungbu high-speed line and describe its utilizing technology in the experimental results of catenary current. In order to analyze field testing results, the current ratio between contact and catenary current have been analyzed by means of Carson-Pollaczek equation. And the current wave forms between catenary and contact wire are presented based on the simulation results.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.137-142
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• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.666-670
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• 2004

VLSI 소자에서 design rule(D/R)이 작아져 각 단위 Pattern의 size가 작아짐에 따라 aspect ratio가 커지게 되었다. 산화막 contact etch를 하는데 있어 산화막 측벽을 보호하는데, 이러한 보호막은 주로 fluoro-carbon 계열의 polymer precursor들이 사용된다. Aspect ratio(A/R)가 5 이하일 때에는 측벽의 보호막에 의한 바닥 변형이 문제가 되지 않으나, 10 이상의 A/R를 가진 contact에서는 크기가 줄고, 모양이 불균형하게 변하는 바닥 변형을 쉴게 관찰할 수 있다. 이러한 바닥 변형이 커지면 contact 저항이 높아지는 것은 물론이고, 심하게는 하부 pattern과 overlap 불량을 유발할 수 있다. 본 논문에서는 바닥변형을 일으키는 원인을 분석하고 fluoro-carbon 계열의 polymer precursor의 종류$(C_4_F6\;vs.\;C_3F_8)$에 따른 polymer증착 상태 확인 및 pattern비대칭에 따른 바닥 변형의 고찰과 plasma etching 시 H/W 변형을 통해 바닥 변형이 거의 없는 조건을 찾아낼 수 있었다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.12
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• pp.1820-1823
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• 2013

An overhead catenary system is the one of the main subjects for increasing speed in electric railway. When a vehicle increases the speed over 350km/h, vibrations and wave propagation reflections occur severely. Therefore, the system suitable for the speed are needed. A wave propagation speed of contact wire is the main criteria to determine the tension for the system. Therefore, a train speed is restricted below 70% of wave propagation speed of it in European railway code. In this study, we measured a strain and uplift of contact wire while HEMU-430X tain is operated for the speed-up trial test in Kyungbu high-speed railway. The measured strain and uplift are analyzed with wave propagation speed according to the speed-up. The more a train speed reaches to a propagation speed, the more measured strain is high. Through the study, an experimental approach is performed about the code which a train speed is restricted below 70% of wave propagation speed of it.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.825-831
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• 2006

As an increase of chip complexity and level of chip integration, chip input/output (I/O) pad pitches are also drastically reduced. With arrival of high complexity SoC (System on Chip) and SiP (System in Package) products, conventional horizontal type probe card showed its limitation on probing density for wafer level test. To enhance probing density, we proposed new vertical type probe card that has the $70{\mu}m$ probe needle with tungsten wire in $80{\mu}m$ micro-drilled hole in ceramic board. To minimize alignment error, micro-drilling conditions are optimized and epoxy-hardening conditions are also optimized to minimize planarity changes. To apply wafer level test for target devices (T5365 256M SDRAM), designed probe card was characterized by probe needle tension for test, contact resistance measurement, leakage current measurement and the planarity test. Compare to conventional probe card with minimum pitch of $50{\sim}125{\mu}m\;and\;2\;{\Omega}$ of average contact resistance, designed probe card showed only $22{\mu}$ of minimum pitch and $1.5{\Omega}$ of average contact resistance. And also, with the nature of vertical probing style, it showed comparably small contact scratch and it can be applied to bumping type chip test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.25-28
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• 2002

Contact type Ic measurement system is needed to measure Ic continuously for long Bi-2223 tapes. Voltage and current terminals were designed several shapes for 4-probe method Ic measurement. Voltage terminals were made with brass and current terminals were made with Cu. We used 2 kinds of Bi-2223 tapes with different strength. When we measured Ic of Bi-2223 tape with Ag-Mg sheath, The proper weight was 0.3 kg and sharp pin type was better. according to voltage terminal shape and load. In case of Bi-2223 tape with Ag-Mn sheath, the proper terminal weight was 4 kg and sharp pin type was bad. It was possible to make continuous contact type Ic measurement system because We could get proper data - terminal shapes and loads - through these experiments.