• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.109-112
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• 2008

The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.47-49
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• 2000

We report on the fabrication and characterization of InGaN/GaN multiple quantum well light emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 m on p-GaN was measured to be 85% at 450nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 m and 23 m, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.34-39
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• 2011

Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

• Journal of the Korean Solar Energy Society
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• v.31 no.1
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• pp.37-43
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• 2011

In this paper, the optimized doping condition of crystalline silicon solar cells with $156{\times}156\;mm^2$ area was studied. To optimize the drive-in temperature in the doping process, the other conditions except variable drive-in temperature were fixed. These conditions were obtained in previous studies. After etching$7\;{\mu}m$ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75~80nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$850^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of $830^{\circ}C$ to $890^{\circ}C$to obtain the sheet resistance $30{\sim}70\;{\Omega}/{\box}$ with $10\;\Omega}/{\box}$ intervals. Solar cell made in $890^{\circ}C$ as the drive-in temperature revealed 17.1% conversion efficiency which is best in this study. This solar cells showed $34.4\;mA/cm^2$ of the current density, 627 mV of the open circuit voltage and 79.3% of the fill factor.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.1-2
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• 2000

In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the onventional rotating barrel, vibrational barrel(vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components. The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed thatbthe average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value. Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components. However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. 2H20 + e $\rightarrow$M/TEX> 20H + H2.. Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure there by resulting to bad plating condition.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.237-241
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• 2000

The structural, electrical and etching characteristics of Al alloy thin film with low impurity concentrations AlNd deposited by using do magnetron sputtering deposition are investigated for the applications as gate bus line in the TFt-LCD panel. And ITO thin film was deposited on AlNd, then the contact resistance was measured by Kelvin resistor. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min. Moreover, the resistivity of AlNd does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlNd is found to be hillock free. The etching profiles of AlNd was good and the minimun contact resistance was about $110\;{\mu\Omega}cm$. Calculation results reveal that the AlNd (2wt.%) thin film can be applicable to 25" SXGA class TFT-LCD panels.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.78-80
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• 2000

We reprot on the fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 nm on-GaN was measured to be 85% at 450 nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 nm and 23 nm, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Smart Structures and Systems
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• v.24 no.6
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• pp.723-732
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• 2019

Globally road transport networks are subjected to continuous levels of stress from increasing loading and environmental effects. As the most popular mean of transport in the UK the condition of this civil infrastructure is a key indicator of economic growth and productivity. Structural Health Monitoring (SHM) systems can provide a valuable insight to the true condition of our aging infrastructure. In particular, monitoring of the displacement of a bridge structure under live loading can provide an accurate descriptor of bridge condition. In the past B-WIM systems have been used to collect traffic data and hence provide an indicator of bridge condition, however the use of such systems can be restricted by bridge type, assess issues and cost limitations. This research provides a non-contact low cost AI based solution for vehicle classification and associated bridge displacement using computer vision methods. Convolutional neural networks (CNNs) have been adapted to develop the QUBYOLO vehicle classification method from recorded traffic images. This vehicle classification was then accurately related to the corresponding bridge response obtained under live loading using non-contact methods. The successful identification of multiple vehicle types during field testing has shown that QUBYOLO is suitable for the fine-grained vehicle classification required to identify applied load to a bridge structure. The process of displacement analysis and vehicle classification for the purposes of load identification which was used in this research adds to the body of knowledge on the monitoring of existing bridge structures, particularly long span bridges, and establishes the significant potential of computer vision and Deep Learning to provide dependable results on the real response of our infrastructure to existing and potential increased loading.

• Journal of IKEEE
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• v.23 no.2
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• pp.599-605
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• 2019

Ferrite cores are used as a soft magnetic material in the fabrication of couplers for inductive powerline communication (PLC). However, it is difficult to adjust the size freely according to the power-line and power-grid environment. In this paper, we report that a nano-crystalline alloy with higher permeability than ferrite can be used as an inductive coupler for non-contact PLC. Since nano-crystalline are produced in the form of a thin ribbon, the size of the coupler can be freely controlled by the number of ribbons wound on the toroidal core. It was fabricated with induction type coupler and showed to be suitable for non-contact power line communication. Experimental results show that the communication bandwidth is 45 Mbps for 100 m and 8 Mbps for 200 m under the current fluctuation of less than 100 A, and the reception ratio is 100%.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.6
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• pp.1235-1242
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• 2018

When the wind speed changes rapidly, the wind turbine is stopped for the safety of the power system and the mechanical system. At that moment, the wind turbine gearbox is damaged and broken due to the contact load of the gearbox. In addition, the problems such as increasing frictional heat and deteriorate of the brake occur, because the power of the blades is transmitted directly to the brakes. This paper proposes a hybrid magnetic gear shape that solves the problem caused by the contact of the mechanical gear, which is the power transmission device of the wind power generation system, and the power cutoff system. The shape of the hybrid magnetic gearsuitable for the wind power generation system is derived through the torque and loss analysis according to the shape of the hybrid magnetic gear by using the two dimensional finite analysis method.