• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.29 no.10
• /
• pp.97-103
• /
• 2015

This paper presents the characteristics of partial discharge and radiated electromagnetic waves in the existence of a poor contact for the insulation diagnosis of eco-friendly power equipment. AC surface discharge experiment was conducted to simulate the poor contact between a hive voltage electrode (anode) and a solid insulator in $N_2/O_2$ mixture gas under a non-uniform field. The partial discharge voltage to be measured at 0.3MPa increased with the increase of the poor contact gap and was saturated with the gap. In addition to the partial discharge characteristics, it was verified that the defect of the poor contact can be diagnosed using the radiated electromagnetic waves due to the partial discharge, which measured by a biconical EMC antenna and a spectrum analyzer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.601-602
• /
• 2005

In the cold and temperate regions of Korea the icing and ice coats on 25 kV overhead contact wire during winter is a very serious problem. This generates shocks at the mechanical interface of the collecting strips of the pantograph and the contact wire and extra electrical resistance, which may affect quality of current collection at the contact wire / collecting strips of pantograph interface. De-icing operations should be performed just before train operation to avoid the formation of another ice layer. This paper presents temperature analysis of the de-icing system which could be applied to the overhead contact wire of railways.

• Proceedings of the KIEE Conference
• /
• 1995.07a
• /
• pp.455-459
• /
• 1995

Catenary/pantograph system consists of overhead lines which have non-uniform elasticity and pantographs which move at high speed and give force to the lines, therefore happen to be failed in contacts between both from time to time. In this study, as the first step to develop a dynamic simulation program, the general theory is discussed for catenary/pantograph system and appropriate modelling. And comparison is conducted with the references after making a program which referred to the contact force equation algorithm. On this algorithm, the unknown contact force is computed by the equations which was induced as combining catenary and pantograph motion equations expressed in finite difference form. Another simulation program based on the assumed contact forces algorithm was developed. In this algorithm, numerical integraion of both the overhead line and pantograph equations, which without combining, are effected for two assumed values of contact force. The correct contact force is then obtained from these two sets of results by linear interpolation to satisfy the contact condition. Through the comparative review on the outputs from this program, it is verified that this algorithm is reliable.

• Progress in Superconductivity and Cryogenics
• /
• v.7 no.2
• /
• pp.21-26
• /
• 2005

Breakdown characteristics and survival probability of turn-to-turn models were investigated under ac and impulse voltage at 77K. For experiments, two test electrode models were fabricated: One is point contact model and the other is surface contact model. Both are made of copper wrapped by O.025mm thick polyimide film(Kapton). The experimental results were analyzed statistically using Weibull distribution in order to examine the wrapping number effects on voltage-time characteristics under ac voltage as well as under impulse voltage in LN$_{2}$. Also survival analysis were performed according to the Kaplan-Meier method. The breakdown voltages of surface contact model are lower than that of point contact model, because the contact area of surface contact model is wider than that of point contact model. Besides, the shape parameter of point contact model is a little bit larger than that of surface contact model. The time to breakdown t$_{50}$ is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.4
• /
• pp.147-151
• /
• 2002

The resistances of metal2 contact to metall and poly Si are checked by various RF etch conditions in terms of pre-cleaning. The changes of resistance are evaluated by statistical analysis method(SAS) for the AC bias power, coil power and RF target. The contact area on poly Si is shown by TEM image and the distributions of contact resistance according to ar etch target and RTP are investigated. The RTP groups have larger variations than normal RF etch targets. When the RF etch target becomes lower and coil power becomes higher, the resistances of metal2 contact to metals and poly Si have lower contact resistance. But the condition of AC bias power did not satisfied low meta12 contacts resistance for metall and poly Si simultaneously. The R-square of ststistical analysis was 0.98 for resistances of meta12 contact to poly Si and 0.87 for resistances of meta12 contact to metall.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.12
• /
• pp.988-991
• /
• 2011

We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different device structure as a bottom and top contact FET. Also, we used a $SiO_2$ as a gate insulator and analyzed using a current-voltage (I-V) characteristics of the bottom and top contact CuPc FET device. In order to discuss the channel formation, we were observed the capacitance-gate voltage(C-V) characteristics of the bottom and top contact CuPc FET device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.151-154
• /
• 1998

We have investigated a correlation of the electrical properties of the Pd/Ge/Pd/Ti/Au ohmic contact on n-InGaAs with its microstructures for the high temperature application of compound semiconductor devices. The samples were heat-treated by the rapid thermal annealing at various temperatures. In the contact system, moderately good specific contact resistance was obtained even before annealing because of the low metals-InGaAs barrier height, and better ohmic performances were observed by annealing up to 400˚C. But the ohmic performance was degraded after annealing at 450˚C due to the increment of Pd$_2$Ga$\sub$5/ phases.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.11
• /
• pp.546-550
• /
• 2002

In this paper, Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter contacts were fabricated. The ITO ohmic contacts were realized by employing thin imdium layer between the ITO and $n^+$-InP layers. The ITO contact was annealed at $250^{\circ}C$. The specific contact resistance of about $6.6{\times}10^{-4}{\Omega}cm^2$ was measured by use of the transmission line model (TLM). Heterojunction bipolar transistors (HBTs) having the same device layout were fabricated to compare with HPTs. The DC characteristics of the InP/InGaAs HPT showed the similar electrical characteristics of the HBT. Emitter contact resistance($R_E$) of about $6.4{\Omega}$ was extracted, which was very similar to that of the HBT. The optical characteristics of HPT's were generated by illuminating the device with light from $1.3{\mu}m$ light. It showed that HPT's can be controlled optically.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.32 no.5
• /
• pp.430-436
• /
• 2008

This paper proposes a way to predict electrical lifetime of a relay using Accelerated Life Testings (ALTs). The relay of interest mounting on printed circuit boards is usually under an inrush current stress. The inrush current is generated and accelerated through controlling a lamp switching device in the ALT. We find that the dominant failure mechanism under high levels of inrush current would be contact welding in the contact surface of the relay and the contact welding process is accelerated according to increase in inrush current. The electrical lifetime model based on Inverse Power Law in term of inrush current is proposed, and parameters characterizing relay's lifetime distribution are statistically estimated using ALTA 6 PRO software.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.64 no.4
• /
• pp.592-597
• /
• 2015

3D-IC is a novel semiconductor packaging technique stacking dies to improve the performance as well as the overall size. TSV is ideal for 3D-IC because it is convenient for stacking and excellent in electrical characteristics. However, due to high-density and micro-size of TSVs, they should be tested with a non-invasive manner. Thus, we introduce a TSV test method on test prober without a direct contact in this paper. A capacitive coupling effect between a probe tip and TSV is used to discriminate small TSV faults like voids and pin-holes. Through EM simulation, we can verify the size of eye-patterns with various frequencies is good for TSV test tools and non-contact test will be promising.