• Title/Summary/Keyword: Electrical Contact

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Investigation of Ni Silicide formation for Ni/Cu contact formation crystalline silicon solar cells (Ni/Cu 금속 전극이 적용된 결정질 실리콘 태양전지의 Ni silicide 형성의 관한 연구)

  • Lee, Ji-Hun;Cho, Kyeong-Yeon;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.434-435
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    • 2009
  • The crystalline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more. high-efficiency and low cost endeavors many crystalline silicon solar cells. the fabrication processes of high-efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/Ag contact, however, this contact formation processed by expensive materials. Ni/Cu contact formation is good alternative. in this paper, according to temperature Ni silicide makes, produced Ni/Cu contact solar cell and measured conversion efficiency.

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Efficiency Characteristics of Half-bridge Series Resonant Converter for the Contact-less Power Supply (Half-bridge 직렬공진 컨버터 적용 무접점 전원장치 효율특성)

  • Lee, Hyun-Kwan;Song, Hwan-Kook;Kim, Eun-Soo;Kim, Yoon-Ho
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.5
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    • pp.884-891
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    • 2007
  • Comparing with the conventional transformer without the air gap, a contact-less transformer with the large air-gap (4.8cm) between the long primary winding and the secondary winding has the increased leakage inductance and the reduced magnetizing inductance. By the increased leakage inductance and the reduced magnetizing inductance on the primary of the contact-less transformer, a good deal of the primary current circulates through magnetizing inductance, which results in a massive loss and the high voltage gain characteristics for load variations in contact-less power supply (CPS). To consider these characteristics, in this paper, the efficiency characteristics of the contact-less power supply using a series resonant converter is presented, described and verified through theoretical analysis, computer simulation and experimental test of 2.5kW prototype.

A Study for the Ohmic Contact of High Resistivity p-Cd$_{80}Zn_[20}$Te Semiconductor (고 비저항 p-Cd$_{80}Zn_[20}$Te의 저항성 전극형성에 관한 연구)

  • 최명진;왕진식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.338-341
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    • 1997
  • According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

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The characteristics of the specific contact resistance of Au-Te to n-GaAs (Au-Te 과 n-GaAs 의 접촉저항 특성)

  • 정성훈;송복식;문동찬;김선태
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.63-66
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    • 1995
  • The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.

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Contact Loss Simulator to Analyze the Contact Loss of a Rigid Catenary System

  • Jung, No-Geon;Kim, Jae-Moon
    • Journal of Electrical Engineering and Technology
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    • v.12 no.3
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    • pp.1320-1327
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    • 2017
  • In this paper, a contact loss simulator for a rigid catenary system was designed and used to analyze the effect on the power source according to the conditions of the rigid catenary system and pantograph. R-bar applied to a high-speed train among the real rigid catenary system was used in the contact loss simulator for rigid catenary systems. The excitation frequency generated with the movement of the railway vehicle was simulated. The characteristics according to the frequency and amplitude of the excitation frequency and the presence or absence of pantograph movement were analyzed. This work is considered to be helpful in analyzing the characteristics of contact loss in the interface between a real rigid catenary system and a rail vehicle.

Research and Development Trend of Carrier Selective Energy Contact Solar Cells (전하선택형 태양전지의 연구개발 동향)

  • Cho, Eun-Chel;Cho, Young Hyun;Yi, Junsin
    • Current Photovoltaic Research
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    • v.6 no.2
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    • pp.43-48
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    • 2018
  • The traditional silicon heterojunction solar cells consist of intrinsic amorphous silicon to prevent recombination of the silicon surface and doped amorphous silicon to transport the photo-generated electrons and holes to the electrode. Back contact solar cells with silicon heterojunction exhibit very high open-circuit voltages, but the complexity of the process due to form the emitter and base at the backside must be addressed. In order to solve this problem, the structure, manufacturing method, and new materials enabling the carrier selective contact (CSC) solar cell capable of achieving high efficiency without using a complicated structure have recently been actively developed. CSC solar cells minimize carrier recombination on metal contacts and effectively transfer charge. The CSC structure allows very low levels of recombination current (eg, Jo < 9fA/cm2), thereby achieves high open-circuit voltage and high efficiency. This paper summarizes the core technology of CSC solar cell, which has been spotlighted as the next generation technology, and is aiming to speed up the research and development in this field.

Ohmic Characteristics of TiN/3C-SiC for High-temperature MEMS Applications (초고온 MEMS용 TiN/3C-SiC의 Ohmic 특성)

  • Jung, Su-Yong;Woo, Hyung-Soon;Kim, Gue-Hyun;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.834-837
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    • 2003
  • In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to $1000^{\circ}C$. The TiN thin-film depostied on 3C-SiC substraes have good electrical properties. Therefore, the TiN/3C-SiC contact can be usefully applied for high-temperature MEMS applications over $500^{\circ}C$.

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Effect of Surface Treatments of Polycrystalline 3C-SiC Thin Films on Ohmic Contact for Extreme Environment MEMS Applications (극한 환경 MEMS용 옴익 접촉을 위한 다결정 3C-SiC 박막의 표면 처리 효과)

  • Chung, Gwiy-Sang;Ohn, Chang-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.234-239
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    • 2007
  • This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

A Study on the Contact Power by Coating Material of Spray in AT Feeding Method (AT급전방식에서 코팅재에 의한 접촉전력에 대한 연구)

  • Kim, Min-Seok;Kim, Min-Kyu;Park, Yong-Gul;Lee, Jong-Woo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.1
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    • pp.85-92
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    • 2011
  • Main characteristic in railroad is the guided movement of the wheel by the track through a metal-to-metal contact, conferring to the rail vehicle a single degree of freedom. There are defects such as head check, shelling, corrugation, squats etc in surface of the rail by interface between the wheel and rail. These defects bring about reducing the life-cycle of rails and track components and increasing noises. In case of bad conditions, it is possible to happen to full-scale accident such as derailment. Recently, the track capacity has been increased for increasing speed and operation efficiency. So, maintenance and indirect cost have been increased. Currently, a coating method of rail construction is proposed by using the ceramics in Korea. Rails are used as the earth in electrical railroad systems. Currently traction return current is flowed through wheels of trains. In case of rails coated, problems are caused in the contact power between wheel and coating material of spray. In this paper, electric model is presented in the AT feeding method. In case of rails coated, electric model is presented. Also, standard resistance of the ceramic is demonstrated by contact power between wheel and coating material of spray.

Study on Insulation Diagnosis of Poor Contact between Electrode and Solid Insulator in Eco-Gas (친환경 가스 중 전극과 고체절연체의 불량접촉에 관한 절연진단연구)

  • Lim, Dong-Young;Choi, Eun-Hyeok;Bae, Sungwoo;Choi, Sang-Tae;Lee, Kwang-Sik;Choi, Byoung-Ju
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.10
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    • pp.97-103
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    • 2015
  • This paper presents the characteristics of partial discharge and radiated electromagnetic waves in the existence of a poor contact for the insulation diagnosis of eco-friendly power equipment. AC surface discharge experiment was conducted to simulate the poor contact between a hive voltage electrode (anode) and a solid insulator in $N_2/O_2$ mixture gas under a non-uniform field. The partial discharge voltage to be measured at 0.3MPa increased with the increase of the poor contact gap and was saturated with the gap. In addition to the partial discharge characteristics, it was verified that the defect of the poor contact can be diagnosed using the radiated electromagnetic waves due to the partial discharge, which measured by a biconical EMC antenna and a spectrum analyzer.