• 제목/요약/키워드: Electrical Cell Transport

검색결과 124건 처리시간 0.026초

V2O5가 첨가된 반도체 산화물의 특성개선연구 (A Study on the Characteristics of Semiconductor Oxides with V2O5)

  • 이돈규
    • 전기전자학회논문지
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    • 제22권4호
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    • pp.965-969
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    • 2018
  • 염료감응형 태양전지에서 반도체 산화물은 전자의 생성과 이동에 중요한 역할을 하므로 이에 관한 광범위한 연구가 지속적으로 수행되고 있다. 본 연구에서는 $V_2O_5$를 첨가시킨 반도체 산화물을 제작하여 염료 감응 태양 전지의 특성을 연구하였다. $V_2O_5$가 첨가된 $TiO_2$ 페이스트는 졸 겔 공정의 스크린 인쇄 법으로 제조하였고, 이에 따른 표면특성 및 전기적 특성을 측정하였다. $V_2O_5$가 첨가됨에 따라 결정립 크기가 증가하였고 염료감응태양전지의 개방 회로 전압, 단락 전류, 충전 계수 및 변환 효율 특성이 개선됨을 확인할 수 있었다.

Pentacene 유기박막의 전도 특성 분석 (Analysis of Conduction Properties of Pentacene Thin Film)

  • 김건주;표경수;김호섭;황성범;송정근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.493-496
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    • 2004
  • Recently, organic thin films are widely used to the application of organic optoelectronic devices such as OLED, OTFT, organic solar cell, and organic laser, etc. The electrical transport of organic thin film is very important to determine the performance and thus should be analyzed for analysis of operation and design of devices. However, there have been rarely known about the electrical transport of organic thin films. As an example pentacene is known to be a good organic semiconductor to produce the best performance in OTFT at the present. But the performance is varied depending on the position of source/drain contacts and gate surface states and the thickness of thin film. Therefore, it is necessary to investigate the effects of the above-mentioned factors on the electrical properties of pentacene thin film.

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나노 셀 OLED의 열 분포 해석 (Thermal Distribution Analysis in Nano Cell OLED)

  • 장경욱
    • 한국전기전자재료학회논문지
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    • 제37권3호
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    • pp.309-313
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    • 2024
  • The key to determining the lifetime of OLED device is how much brightness can be maintained. It can be said that there are internal and external causes for the degradation of OLED devices. The most important cause of internal degradation is bonding and degradation in the excited state due to the electrochemical instability of organic materials. The structure of OLED modeled in this paper consists of a cathode layer, electron injection layer (EIL), electron transport layer (ETL), light emission layer, hole transport layer (HTL), hole injection layer (HIL), and anode layer on a glass substrate from top to bottom. It was confirmed that the temperature generated in OLED was distributed around the maximum of 343.15 K centered on the emission layer. It can be seen that the heat distribution generated in the presented OLED structure has an asymmetrically high temperature distribution toward the cathode, which is believed to be because the sizes of the cathode and positive electrode are asymmetric. Therefore, when designing OLED, it is believed that designing the structures of the cathode and anode electrodes as symmetrically as possible can ensure uniform heat distribution, maintain uniform luminance of OLED, and extend the lifetime. The thermal distribution of OLED was analyzed using the finite element method according to Comsol 5.2.

Performances and Electrical Properties of Vertically Aligned Nanorod Perovskite Solar Cell

  • Kwon, Hyeok-Chan;Kim, Areum;Lee, Hongseuk;Lee, Eunsong;Ma, Sunihl;Lee, Yung;Moon, Jooho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.429-429
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    • 2016
  • Organolead halide perovskite have attracted much attention over the past three years as the third generation photovoltaic due to simple fabrication process via solution process and their great photovoltaic properties. Many structures such as mesoporous scaffold, planar heterojunction or 1-D TiO2 or ZnO nanorod array structures have been studied to enhance performances. And the photovoltaic performances and carrier transport properties were studied depending on the cell structures and shape of perovskite film. For example, the perovskite cell based on TiO2/ZnO nanorod electron transport materials showed higher electron mobility than the mesoporous structured semiconductor layer due to 1-D direct pathway for electron transport. However, the reason for enhanced performance was not fully understood whether either the shape of perovskite or the structure of TiO2/ZnO nanorod scaffold play a dominant role. In this regard, for a clear understanding of the shape/structure of perovskite layer, we applied anodized aluminum oxide material which is good candidate as the inactive scaffold that does not influence the charge transport. We fabricated vertical one dimensional (1-D) nanostructured methylammonium lead mixed halide perovskite (CH3NH3PbI3-xClx) solar cell by infiltrating perovskite in the pore of anodized aluminum oxide (AAO). AAO template, one of the common nanostructured materials with one dimensional pore and controllable pore diameters, was successfully fabricated by anodizing and widening of the thermally evaporated Al film on the compact TiO2 layer. Using AAO as a scaffold for perovskite, we obtained 1-D shaped perovskite absorber, and over 15% photo conversion efficiency was obtained. I-V measurement, photoluminescence, impedance, and time-limited current collection were performed to determine vertically arrayed 1-D perovskite solar cells shaped in comparison with planar heterojunction and mesoporous alumina structured solar cells. Our findings lead to reveal the influence of the shape of perovskite layer on photoelectrical properties.

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On Electric Field Induced Processes in Ionic Compounds

  • Schmalzried, H.
    • 한국세라믹학회지
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    • 제38권6호
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    • pp.499-505
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    • 2001
  • The behaviour of ionic compound crystals under combined chemical and externally applied electrical potential gradients is discussed. Firstly, a systematic overview is given. Then a formal analysis follows. The transport equations of the ions and the electric defects predict that even with reversible electrodes demixing, and in particular decomposition of the compound will occur if the applied d.c. current density is sufficiently high. These predictions are illustrated by appropriate experiments. With the help of the solid solution (Me, Fe)O, where Fe-ions are the dilute species, we investigate experimentally the behaviour of a ternary ionic crystal under a d.c. electric current load. All the compounds were placed in a galvanic cell, and the internal reactions which then could be observed were driven by the electric field in this cell. In addition, we discuss the influence of the electric field on the classical solid state reaction AX+BX=ABX$_2$, if again the reaction couple is placed in a galvanic cell.

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Role of Surfaces and Their Analysis in Photovoltaics

  • Opila, Robert L.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.72-72
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    • 2011
  • Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.

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이종접합 실리콘 태양전지 적용을 위한 선택적 전하접합 층으로의 전이금속산화물에 관한 연구 (A Study on the Selective Hole Carrier Extraction Layer for Application of Amorphous/crystalline Silicon Heterojunction Solar Cell)

  • 김용준;김선보;김영국;조영현;박창균;이준신
    • 한국전기전자재료학회논문지
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    • 제30권3호
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    • pp.192-197
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    • 2017
  • Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.

A Two-Dimensional Particle-in-cell Simulation for the Acceleration Channel of a Hall Thruster

  • Lim, Wang-Sun;Lee, Hae-June;Lee, Jong-Sub;Lim, Yu-Bong;Seo, Mi-Hui;Choe, Won-Ho;Seon, Jong-Ho;Park, Jae-Heung
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2008년 영문 학술대회
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    • pp.557-560
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    • 2008
  • A two-dimensional particle-in-cell(PIC) simulation with a Monte-Carlo Collision(MCC) has been developed to investigate the discharge characteristics of the acceleration channel of a HET. The dynamics of electrons and ions are treated with PIC method at the time scale of electrons in order to investigate the particle transport. The densities of charged particles are coupled with Poisson's equation. Xenon neutrals are injected from the anode and experience elastic, excitation, and ionization collisions with electrons, and are scattered by ions. These collisions are simulated by using an MCC model. The effects of control parameters such as magnetic field profile, electron current density, and the applied voltage have been investigated. The secondary electron emission on the dielectric surface is also considered.

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전하선택형 태양전지의 연구개발 동향 (Research and Development Trend of Carrier Selective Energy Contact Solar Cells)

  • 조은철;조영현;이준신
    • Current Photovoltaic Research
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    • 제6권2호
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    • pp.43-48
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    • 2018
  • The traditional silicon heterojunction solar cells consist of intrinsic amorphous silicon to prevent recombination of the silicon surface and doped amorphous silicon to transport the photo-generated electrons and holes to the electrode. Back contact solar cells with silicon heterojunction exhibit very high open-circuit voltages, but the complexity of the process due to form the emitter and base at the backside must be addressed. In order to solve this problem, the structure, manufacturing method, and new materials enabling the carrier selective contact (CSC) solar cell capable of achieving high efficiency without using a complicated structure have recently been actively developed. CSC solar cells minimize carrier recombination on metal contacts and effectively transfer charge. The CSC structure allows very low levels of recombination current (eg, Jo < 9fA/cm2), thereby achieves high open-circuit voltage and high efficiency. This paper summarizes the core technology of CSC solar cell, which has been spotlighted as the next generation technology, and is aiming to speed up the research and development in this field.

Electrical Characterization of Cu(InxGa1-x)(SySe2-y) Thin Film Solar Cells

  • Kim, Dahye;Kim, Ji Eun;Cho, Yunae;Kim, Dong-Wook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.464.1-464.1
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    • 2014
  • Among numerous material candidates, Cu(InxGa1-x)(SySe2-y) (CIGS) thin films have emerged as promising material candidates for thin film solar cell applications due to the high energy conversion efficiency and relatively low fabrication cost. The CIGS thin film solar cells consist of several materials, including Mo back contacts, ZnO-based window layers, and CdS buffer layers. All these materials have different crystal structures and contain quite distinct chemical elements, and hence the device characterization requires careful analyses. Most of all, identification of the major trap states resulting in the carrier recombination processes is a key step toward realization of high efficiency CIGS solar cells. We have carried out electrical investigations of CIGS thin film solar cells to specify the major trap states and their roles in photovoltaic performance. In particular, we have used the temperature-dependent transport characterizations and admittance spectroscopy. In this presentation, we will introduce some exemplary studies of DC and AC electrical characteristics of the CIGS solar cells.

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