• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.9
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• pp.1330-1336
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• 2015

It is necessary to study on acoustic and vibratory response of a MEMS resonant accelerometer before applying to military applications. In this paper, we analyze why the resonant accelerometer reacts to an acoustic wave and a high frequency vibration. And we describe experimental results on acoustic and vibratory response of the accelerometer. The accelerometer consists of a proof mass and a dual ended tuning fork. It is a differential resonant accelerometer with arranging a pair of accelerometers. The mode shape was analyzed to find out the input mode frequency by using a FEM simulation. Some experiments regarding the acoustic noise was carried out by using a tweeter and a microphone in the anechoic room. Results showed that the accelerometer reacted to the acoustic wave and vibration which had the input mode frequency as we had expected. We showed experimentally not only that the susceptibility of the accelerometer to an acoustic wave was 70 dB but also that the effectiveness of applying an acoustic absorber and a metal case was 20 dB, respectively. Also, we could minimize the vibratory response property of the accelerometer by installing a IMU with a silicone rubber mount pad.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.10
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• pp.739-744
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• 2018

In this paper, a double split-ring resonator(DSRR) is proposed to improve the isolation between Vivaldi antenna elements. The DSRR was designed using a unit cell simulation and applied to a $1{\times}2$ Vivaldi antenna array to confirm the improvement in the isolation. The unit cell size of the proposed DSRR is $5mm{\times}5mm{\times}1.52mm$ and six unit cells are used. To verify the performance of the proposed DSRR, $1{\times}2$ Vivaldi antenna arrays with and without the DSRR were fabricated and measured. The results show an isolation improvement of 20 dB in the Vivaldi antennas with the DSRR when compared to the Vivaldi antennas without the DSRR.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.125-129
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• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.590-590
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• 2012

A transparent conducting oxide (TCO) layer was applied in crystalline Si (c-Si) solar cells without use of the conventional SiNx-coating. A high quality indium-tin-oxide (ITO) layer was directly deposited on an emitter layer of a Si wafer. Three different types of emitters were formed by controlling the phosphorous diffusion condition. A light-doped emitter forming a thinner emitter junction showed an improved photoconversion efficiency of 14.1% comparing to 13.2% of a heavy-doped emitter. This was induced by lower recombination within a narrower depletion region of the light-doped emitter. In the aspect of light management, the intermediate refractive index of ITO is effective to reduce the light reflection leading the enhanced carrier generation in a Si absorber. For the electrical aspect, the ITO layer serves as an efficient electrical conductor and thus relieves the burden of high contact resistance of the light-doped emitter. Additionally, the ITO works as a buffer layer of Ag and Si and certainly prevents the shunting problem of Ag penetration into Si emitter region. It discusses an efficient design scheme of TCO-embedded emitter Si solar cells.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.11 no.6
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• pp.96-103
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• 1997

This paper deals with the malfunction characteristics of the earth leakage circuit breakers(ELBs) applied by a lightning impulse voltage. In the cases of the regulation of KS C 4613 and the simulated circuits with surge protection devices, the dead operation characteristics of the ELBs against lightning impulse voltages were experimentally investigated and discussed. As a result, all the specimens(ELBs) used in this work have a cutoff performance of the lightning impulse voltage when the differential mode surges were injected at the input terminals of the ELBs owing to a surge absorber installed at the power source side of amplification circuit. Four kinds of the specimens have brought about malfunction in the condition of the lightning impulse dead operation test defined in KS C 4613, and the malfunction voltages are relatively high and are about 5-6.5[kV]. In the case of the simulated test circuit with surge protection devicesthree kinds of the ELBs have led to malfunction. Also the voltage level causing the malfunction of the ELBs is decreased by operation of surge protection devices, and it ranges from 3 to 5(kV).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.11
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• pp.907-914
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• 2014

The objective of this study was to increase the generating efficiency of concentrated photovoltaics (CPV) by using hybrid solar tracking. Further, the proposed system was demonstrated to have the ability to extract thermal energy from a concentrated photovoltaic system by using thermal absorbers containing heat pipe, which could then be used for a heating system or hot-water supply. The average electrical efficiency was 16 during the day, and the average thermal efficiency was 62. Therefore, this system demonstrated a total efficiency (electrical thermal) of 78. All the processes, i.e., tracking of the sun, calculation of the sun's position, reinstatement of the heating device toward the east for tracking on the next day, and system shutdown, were programmed using Simulink. A parametric analysis of the heat pipe, concentration ratio, and inlet velocity was also performed in terms of the operating temperature of the CPV and the outlet temperature. The simulation and experimental results for the thermal absorber were found to be in good agreement.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.202-206
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• 2005

The present investigation provides an electromagnetic radiation absorptive composition which comprises silver-coated ferrite microspheres dispersed in silicon rubber matrix for the aim of thin microwave absorber in GHz frequencies. Ni-Zn ferrite spheres with $50{\mu}m$ size in average were prepared by spray-drying and sintering at $1130^{\circ}C$. Conductive silver layer was plated on ferrite spheres by electroless plating. Conductive Ni-Zn ferrite sphere with uniform silver layer were obtained in the concentration of 10 g/L $AgNO_3$ per 20 g ferrite spheres. For this powder, electrical resistance is reduced as low as $10^{-2}\~10^{-3}\;\Omega$. The most sensitive material parameters with silver plating is real and imaginary parts of complex permittivity. The conductive Ni-Zn ferrite spheres have large values of dielectric constant. Due to this high dielectric constant of microspheres, matching thickness is reduced to as low as 2 mm at the frequency of 7 GHz, which is much thinner than conventional ferrite absorbers.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.2
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• pp.5-12
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• 2000

Uncooled metallic thin-film thermopile infrared detectors have been fabricated, and the figures of merit for the detectors were examined. The hot junctions of a thermopile were prepared on a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-membrane which acts as a thermal isolation layer, the cold junctions on the membrane supported with the silicon rim which functions as a heat sink, and Au-black was used as an infrared absorber. Infrared absorbance of Au-black, which strongly depends on the chamber pressure during Au-evaporation and its mass per area, was found to be about 90 ％ in the wavelength range from 3${\mu}{\textrm}{m}$ to 14${\mu}{\textrm}{m}$. Voltage responsivity, noise equivalent power, and specific detectivity of Bi-Sb thermopile infrared detector at 5 Hz-chopping frequency were about 10.5V/W, 2.3 nW/Hz$^{1/2}$, 및 $1.9\times10^{7}$ cm.Hz$^{1/2}$/w at room temperature in air, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.