• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.137-139
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• 2001

In this paper, to obtain the material properties through the semiconducting shields of 22kV XLPE power cable. the water absorption TGA DSC and dielectric properties were respectively measured between semiconducting shield and XLPE. Especially, dielectric properties were measured with temperature variation. Above result, the water absorption was 1200 ppm and the ratio of carbon black was 40% in semiconducting shields. The dielectric constant was $10^3{\sim}10^5$, $tan{\delta}$ was $10^2{\sim}10^3{\Omega}cm$ and volume resistivity was $280{\sim}2.8{\times}10^3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.114-117
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and sintering temperature. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $1020^{\circ}C$ due to the formation of the polycrystalline perovskite phase. BSCT(50/40/10) specimen sintered at $1500^{\circ}C$ showed the highest average grain size(18.25$[{\mu}m]$). Curie temperature and dielectric constant at room temperature decreased with increasing amount of Ca. BSCT(50/40/10) specimen sintered at $1450^{\circ}C$ showed a good dielectric constant, K, (=4324) and dielectric loss, $tan{\delta}$, (=0.972%) properties at 1[KHz].

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.267-271
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• 1995

The electrical properties of (S $r_{0.50}$P $b_{0.25}$B $a_{0.25}$)Ti $O_{3}$ ceramics were studied. Specimens were prepared by the conventional mixed oxide method, and fired between 1300[.deg. C] - 1375[.deg. C], for 2[hr.]. The electrical and structural preperties of specimens were investigated with sintering temperature. Increasing the sintering temperature from 1300[.deg. C] to 1375[.deg. C], average grain size was increased from 2.61[.mu.m] to 4.53[.mu.m]. (S $r_{0.50}$P $b_{0.25}$B $a_{0.25}$)Ti $O_{3}$ specimen sintered at 1350[.deg. C] for two hours showed good dielectric constant(2147) and dielectric loss(1.7[%]) properties at 1[khz]. Sintered density and breakdown field strength were the highest value of 5.75[g/c $m^{3}$], 20[kV/cm], respectively. Dielectric properties with applied voltage were independent of the sintering temperature.temperature.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.797-802
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• 2014

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{1-x}Ca_x)(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskite phase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature($T_c$), which is located in the vicinity of room temperature.

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.424-427
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• 2015

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{0.86}Ca_{0.14})(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3+xCuO$ (x= 0.006~0.010) ceramics were prepared by the conventional solid-state reaction method. The effects of CuO addition on the microstructure and dielectric properties was investigated. All specimens indicated rhombohedral phase without any secondary phase. As CuO addition increased, the variation width of TCC was increased at more than $40^{\circ}C$. Also, the specimen with x=0.007 sintered at $1,250^{\circ}C$ showed the high dielectric constant of 9,632 in spite of low temperature sintering temperature.

• 전기의세계
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• 제22권4호
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• pp.30-34
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• 1973

The main purporse of this paper is to study on the influence of temperature effect on electrical-properties, i.e., dielectric breakdown voltage, dielectric constant and resitivity of homemade insulating oil containing antioxidant. Transformer oil manufactured in Korea is taken for a sample, and this sample is classified into seven samples in which antioxidant is contained and not contained, and antioxidant is divided into three kinds of amount: 0.3%, 0.5%, 0.8%. Changing the tempe5rature of the samples by oil bath, the electric properties measured from the samples are as follows: (1) the variation of either the dielectric breakdown voltage or the resistivity are considerably large, but the dielectric constants are almost unchanging. (2) In view of electrical characteristic, the deterioration rate of the samples containing antioxidant is somewhat lower than that of other samples. (3) Nearly the same value is shown in the dielectric-breakdown voltage of the samples, in which contained the different amount of antioxidant: 0.3%, 0.5%, 0.8%, but the decrease rate of resitivity is lowest, 0.3%, of all. As the result of the experiment, This study can suggest that 0.3% be the optimum amount of antioxidant which will be added transformer oil manufactured in Korea and is useful for the understanding about the electrical properties of transformer oil containing antioxidant.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.776-779
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• 2004

The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.72-75
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• 2001

In this paper, the $Sr_{1-x}Ca_{x}TiO_{3}(0{\leq}x{\leq}0.2)$ 2)-based grain boundary layer ceramics were fabricated to measured dielectric properties and voltage-current properties. The sintering temperature and time were $1420\sim1520^{\circ}C$, 4hours, in $N_{2}$ gas, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The 2nd phase formed by thermal diffusion from the surface lead to a very high apparent dielectric constant, $\varepsilon_r$ > 50000. X-ray diffraction patterns exhibited cubic structure for all specimens. Increasing content of Ca, the peak intensity were decreased.ﱇﶖ⨀ਆᘍ܀㘱㔮㠹㬅K䍄乍

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.942-946
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• 2004

The crystalline and dielectric properties on Al$_2$O$_3$ filled glass frit (CaO-Al$_2$O$_3$-SiO$_2$-MgO-B$_2$O$_3$) with admixtures of TiO$_2$ have been investigated. The dielectric constant value of 7.5 ∼ 7.8, qualify factor value of 700 were obtained for glass frit : Al$_2$O$_3$(50 : 50 wt%) ceramics. Addition of TiO$_2$ less than 5 wt% slightly increased the dielectric constant from 7.8 to 8.8 due to higher dielectric constant of TiO$_2$. With increasing the amount of TiO$_2$ up to 5 wt%, the temperature coefficient of dielectric properties was improved. When the TiO$_2$ 5 wt% were added, dielectric properties were dielectric constant 8.8, quality factor 840 and the temperature coefficient of dielectric 45 ppm/$^{\circ}C$ at a sintering temperature 920$^{\circ}C$.