• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1473-1475
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• 2002

This study presents the dielectric properties of $Ta_2O_5$ MIM capacitor structure processed by thermal oxidation. The AES(auger electron emission) depth profile showed thermal oxidation effect gives rise to the $O_2$ deficiened into the new layer. The leakage current density respectively, at $1{\sim}3{\times}10^{-3}$(kV/cm) were $3{\times}10^{-4}-10^{-8}(A/cm^2)$. Leakage current density behavior is stable irrespective of applied electric field, the frequency va capacitance characteristic enhanced stability. The capacitance vs voltage measurement that, $V_{fb}$(flat-band voltage) was increase dependance on the thin films thickness, it is changed negative to positive.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.139-140
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• 2000

The origin of the display current in the surface conduction electron emitter displays has been verified in the calculation of the electron trajectory. Some electrons move directly toward the display surface as an anode current which is generated due to the inertial force of electron motion along the curved electric field lines with a small curvature near the fissure area..

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.198-200
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• 2015

The microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow a carbon nanowall (CNW) on a silicon (Si) substrate with hydrogen (H₂) and methane (CH₄) gases. To find the growth mechanism of CNW, we increased the growth time of CNW from 5 to 30 min. The vertical and surficial conditions of the grown CNWs according to growth time were characterized by field emission scanning electron microscopy (FE-SEM). Energy dispersive spectroscopy (EDS) measurements showed that the CNWs consisted solely of carbon.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.41-45
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology and successive in-situ photocathode vacuum device fabrication carried out in a process chamber. Performance testing of the device was followed. Light emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The luminescent characteristics of the devices were investigated by measuring the optical parameters as functions of the applied anode voltages. The results showed that this approach could produce a more easily directed and controlled stream of light. These features make these devices suitable for a variety of planar lighting applications.

• Journal of Sensor Science and Technology
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• v.24 no.5
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• pp.348-352
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• 2015

Thin nickel oxide films formed on uncooled and cooled $SiO_2/Si$ substrates using a radio frequency (RF) magnetron sputter powered by 200 W in a mixed atmosphere of argon and oxygen. Grazing-incidence X-ray diffraction and field emission scanning electron microscopy are used for the structural analysis of nickel oxide films. The electrical conductivity required for better bolometric performance is estimated by means of a four-point probe system. Columnar and (200) preferred orientations are discovered in both films regardless of substrate cooling. Electric resistivity, however, is greatly influenced by the substrate cooling. Oxygen partial pressure increase during the nickel oxide deposition leads to a rapid decrease in resistivity, and the resistivity is higher in the cooled nickel oxide samples. Even when small microstructure variations are applied, lower resistivity in favor of low noise performance is acquired in the uncooled samples.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.2
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• pp.284-287
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• 2013

In this work, we have fabricated TiC films by using unbalanced magnetron sputtering method with graphite and Ti targets for contact strip application of electric railway. TiC films were deposited with various substrate temperatures. We investigated various properties of TiC films prepared with various substrate temperatures, such as the hardness, surface roughness, friction coefficient, resistivity, FESEM (Field Emission Scanning Electron Microscopy), HRTEM (High Resolution Transmission Electron Microscopy) and XPS (X-ray Photoelectron Spectroscopy). The hardness and friction coefficient properties of TiC films were improved with increasing substrate temperature. These results indicate that the improvement of hardness and resistivity is related to the increase of sp2 clusters in TiC films. And also, the resistivity value of TiC films were decreased with increasing substrate temperature.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.79-84
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• 2009

The electron emission source of triode type has been fabricated using CNT paste. The nano Ag particle and photosensitive polymers were added to the CNT paste. The surface roughness of the CNT emitter was uniform by the back exposure method. The added nano Ag particle improves the adhesion and the electric conductance with small variation in the CNTs and between electrode. After the aging with heat-exhausting, the reliability of the triode CNT electron source was secured in the high voltage and current operation for 12 hours. At this time, the gate leakage current was about 10 % less than.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1137-1139
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• 1995

$SiN_x$ films deposited on bare Si and wet-etched Si by RPCVD were fabricated to investigated the effect of wet-etched surface of Si on the characteristics of the interface between $SiN_x$ and Si. FT-IR spectra on each film showed similar characteristics. However, it was confirmed that the electric characteristics(I-V, C-V) of the interface between $SiN_x$ and Si have been degraded by the wet etching process of Si, which is applied for the formation of Si field emitter array. Therefore, we suggest that the stacked structure of insulating layer with good interface characteristics is desirable for FED application.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.3
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• pp.523-532
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• 1994

A knowledge of the accurate characteristic impedance of a GTEM cell is very useful to design it. This paper discusses the characteristic impedance of a GTEM cell applicable to both susceptibility and emission measurements, considering opening angle of it. The over-RGM for analysis is described : this numerical method is operated with respect to the spherical coordinate system. Some results are compared with others and the validity of this analysis is estabished. The characteristic impedances of a GTEM cell with the variation of geometrical constructions on cross section are presented ; the effect of the opening angle on the characteristic impedance is show. Finally, the electirc field uniformities on a cross section of a GTEM cell are considered for various opening angles.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.8
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• pp.32-39
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• 2015

This paper presents the surface flashover mechanism of a laminated solid dielectric and describes the surface flashover characteristics with the inherent capacitance of the laminated solid dielectric in a $N_2/O_2$ mixture gas (8:2) under an quasi uniform field. It was found that the electron emission at a cathode and the high-local electric field region around an anode were important factors to reasonably describe the surface flashover mechanism. The surface flashover voltage by the mechanism decreased with the inherent capacitance increase of the laminated solid dielectric. In addition to the surface flashover mechanism and its characteristics, the surface flashover voltage equations as a function of the inherent capacitance were derived by considering a gas pressure used in future eco-friendly GIS and the factors influencing the surface flashover.