• Journal of Information Display
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• v.10 no.4
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• pp.158-163
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• 2009

There are two kinds of well-known electron emissions from metal: field and thermionic emission. For thermionic emission, electrons come out of a metal due to the thermal energy, whereas for field emission, electrons tunnel out of a metal through the strong electric field. In this study, the most general electron emission caused by the temperature and electric field with a free electron gas model was considered. The total current density of electron emission comes from the field emission effect, where the electron energy is lower than vacuum, and from the thermionic-emission effect, where the electron energy is higher than vacuum. The total current density of electron emission is shown as a function of the temperature for a constant electric field, and as a function of the electric field for a constant temperature.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1867-1869
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• 1999

Pulse electric field induced electron emission from ferroelectrics has been studied with Pb$(Zr_xTi_{1-x})O_3$ ceramics with varying Zr/Ti ratio from 35/65 to 65/35, Electron emission was proved to be concentrated on the electrode edge by emission profile test and emission capture photographs. The 65/35 composition showed largest emission charge in lowest field and lowest emission threshold field. The emission characteristics are closely dependent on their ferroelectric properties in hysteresis curve. Electron emission charge increases with the polarization charge and emission threshold voltage is dependent on coercive field regardless of their composition. But dielectric constant has little relation with emission property. Electron emission charge increases exponentially with pulse electric field irrespective of composition. On the assumption that the surface potential is linear with the pulse electric field, electron emission can be regarded as a field emission at the electrode edge using Fowler-Nordheim plot of ln$(Q_e/E_{fe})$ to $1/E_{fe}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1602-1605
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• 2008

We considered most general electron emission caused by temperature as well as electric field with a free electron gas model. The total electron emission current density comes from field emission effect where electron energy is lower than vacuum and from thermionic emission effect where electron energy is higher than vacuum. The total electron emission current density is shown as a function of temperature for constant electric field, and as a function of electric field for constant temperature.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.6-11
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• 2000

Electron emission from the Pb(ZrxTi1-x)O3 ferroelectrics by pulsed electric field has been investigated as a function of Zr/Ti ratios such as 35/65, 50/50 and 65/35 below 250kV/cm. Electrons were emitted regardless of the applied field polarity to the rear electrode. When the negative field was applied to the rear electrode, the electron emission charge was more stable. It was proved that the electrons were emitted at the edge of the upper electrode. The emission charge increased in order of 65/35>50/50>35/65. The electron emission characteristics were dependent on the ferroelectric properties such as polarization and coercive field. The emission charge and emission threshold field were affected by the polarization change and the coercive field, respectively. This result explains that the electron emission is a field emission with polarization induced surface potential by a modified Fowler-Nordheim plot of emission charge.

• Journal of the Korean Applied Science and Technology
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• v.30 no.4
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• pp.586-591
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• 2013

This paper describes the characteristics of thermo-field emission in a freestanding silicon nanomembrane under ion bombardment with various thermal and field conditions. The thermal effect and field effect in thermo-field emission in silicon nanomembrane are investigated by varying kinetic energy of ions and electric field applied to the silicon nanomembrane surface, respectively. We found that thermo-field emission increases linearly as the electric field increases, when the electric field intensity is lower than the threshold. The thermo-field emission (schottky effect) increases proportionally to the power of temperature, which agree well with the predictions of a thermo-field emission model.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.424-428
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• 2003

The microstructure and field emission properties of carbon nanotubes(CNT) grown by Ni-catalytic chemical vapor deposition(CVD) were investigated. CVD-grown CNT had a high density of curved shape with randomly oriented. It was found that an increase in electric field caused an increase in field emission current and field emission sites of CNT. The maximum field emission current density was measured to be 3.6 ㎃/$\textrm{cm}^2$ at 2.5 V/$\mu\textrm{m}$, while the brightness of 56 cd/$\textrm{cm}^2$ was observed for the CNT-grown area of 0.8 $\textrm{cm}^2$ from a phosphor screen. Field emission current at constant electric field gradually decreased initially and then stabilized with time.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.11-17
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• 2021

I performed a semi-analytical numerical analysis of the effects of core size and electric field intensity on the light emission wavelength of CdSe/ZnS quantum dots (QDs). The analysis used a quantum mechanical approach; I solved the Schrödinger equation describing the electron-hole pairs of QDs. The numerical solutions are described using a basis set composed of the eigenstates of the Schrödinger equation; they are thus equivalent to analytical solutions. This semi-analytical numerical method made it simple and reliable to evaluate the dependency of QD characteristics on the QD core size and electric field intensity. As the QD core diameter changed from 9.9 to 2.5 nm, the light emission wavelength of CdSe core-only QDs varied from 262.9 to 643.8 nm, and that of CdSe/ZnS core/shell QDs from 279.9 to 697.2 nm. On application of an electric field of 8 × 10⁵ V/cm, the emission wavelengths of green-emitting CdSe and CdSe/ZnS QDs increased by 7.7 and 3.8 nm, respectively. This semi-analytical numerical analysis will aid the choice of QD size and material, and promote the development of improved QD light-emitting devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.4
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• pp.590-594
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• 2012

ZnO nanowires were fabricated by hydrothermal synthesis technique for field emission device application. Al-doped zinc oxide (AZO) thin films were prepared as seed layer of catalyst for the ZnO nanowire synthesis, for which conductivity of the seed layer was tried to be improved for enhancing the field emission property of the ZnO nanowire. The AZO seed layer revealed specific resistivity of $ 7.466{\times}10^{-4}[{\Omega}{\cdot}cm]$ and carrier mobility of 18.6[$cm^2$/Vs]. Additionally, upper tip of the prepared ZnO nanowires was treated by hydrochloric acid (HCl) to form a nanocone shape of ZnO nanowire, which was aimed for enhanced focusing of electric field on that and resultingly to improve field emission property of the ZnO nanowires. The ZnO nanowire with nanocone shape revealed decreased threshold electric field and increased current density than those of the simple ZnO nanowires.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.11
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• pp.1004-1009
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• 2012

Carbon nanotube are nanostructure with extraordinary field emission properties like high current density, low driving voltage and long time stability, because of their high electrical conductivity, high aspect ratio for geometrical field enhancement and superior thermal stability. But, there is some problem to mate metal and carbon nanotube, we have resolved this problem by using interfacial graphene. This approach takes advantage of superior electric and thermal conductivity between metal and carbon nanotube and shows superior performance compared to the existing field emitters. This result shows that such a carbon nanotube emitter in a stage where it can be used for Field Emission Electric Propulsion (FEEP).

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.623-626
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• 2010

We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was $50\;{\mu}m$ and the pattern was arrayed as $4{\times}4$. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was $5.4\;V/{\mu}m$ and the emission current was $5\;mA/cm^2$. The threshold electric field was $5.4\;V/{\mu}m$ in the $4{\times}4$ array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires.