• Title/Summary/Keyword: Electric breakdown

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A Study on the Improvement of Insulation cover for Instrument Transformer Used In Power Receiving System of Construction Sites (건설현장의 수전설비에서 사용되는 계기용변성기 절연커버의 성능개선에 관한 연구)

  • Gil, Hyoung-Jun;Choi, Chung-Seog;Kim, Hyang-Kon;Han, Woon-Ki;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.19 no.2
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    • pp.55-62
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    • 2005
  • There are many risk factors of electrical shock caused by a minimum of protective devices, loose working environments, deterioration of installations at temporary power installations of construction sites. An insulation cover for instrument transformer(MOF) used in 22.9[kV] class power receiving system hasn't shown good performance in terms of electrical safety because of short clearance between insulation cover and each input and output wire junction part. The insulation cover is easily moved by outside environment as wind or rain because of different size between insulation cover and busing, also can be leaded to breakdown by tracking. Therefore, we have proposed the insulation cover which effectively can prevent from electrical disaster in this paper, and a utility model patent had been registered already. To decrease the electric field concentrated on specific part, we had roundly designed the shape of insulation cover and the clearance between cover and live part was adjusted to be longer than the existing thing. The proposed insulation cover was evaluated by using the electric field solution program.

Fabrication of PPLN by Real-Time Control of a Transferred Charge and Analysis of Domain Inversion Process (주입 전하량의 실시간 제어에 의한 PPLN 제작 및 분극반전 과정 분석)

  • Kwon, Jai-Young;Kim, Hyun-Deok;Song, Jae-Won
    • Korean Journal of Optics and Photonics
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    • v.17 no.3
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    • pp.262-267
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    • 2006
  • We proposed a PPLN fabrication setup that measures the voltage and current applied to $LiNbO_3$ in real time during application of a DC electric field. Because the duration for transferring a sufficient electron charge to $LiNbO_3$ increases, we are able to control the electron charge flow transferred to $LiNbO_3$ efficiently. We divided the domain inversion process of PPLN into 5 states: Nucleation (state 1), Spread of the domain inversion region under the electrode(state 2), Accumulation of the electron charge at the insulator/$LiNbO_3$ interface(state 3), Domain inversion under the insulator layer after breakdown(state 4), and Lowering the electric field applied to $LiNbO_3$ (state 5). We have found that the Threshold Point is essential for the domain inversion and that the domain inversion process must be stopped within state 3 for the optimum PPLN. Using these results, we could fabricate a stable and reproducible PPLN efficiently.

Preparation and Characterization of Organic-inorganic Hybrid Composite Film with Plate-shaped Alumina by Electrophoretic Deposition as a Function of Aging Time of Sol-Gel Binder

  • Kim, Doo Hwan;Park, Hee Jeong;Choi, Jinsub;Lim, Hyung Mi
    • Journal of the Korean Ceramic Society
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    • v.52 no.5
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    • pp.366-373
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    • 2015
  • Sol-gel binder was prepared by hydrolysis and condensation reaction using boehmite sol and methyltrimethoxysilane as a function of aging-time. The coating slurry was composed of a plate-shape alumina in the sol-gel binder for the EPD process, in which particles dispersed in the slurry were deposited on the electrode under an electric field due to the surface charge. We studied the effects of three parameters: the content of boehmite, the aging time, and the applied voltage, on the physical, thermal, and electrical properties of the hybrid composite films by EPD. The amount of boehmite was 10 ~ 20 wt% and the aging time was 0.5 ~ 72, with a fixed amount of plate-shape alumina of 10 wt%. The condition of applied voltage was 5 ~ 30 V with a distance of 2 cm between the electrode during the EPD process. We confirmed that a structure of hybrid composite films of well-ordered plate alumina was deposited on the substrate when the film was prepared using a sol-gel binder composed of 15 wt% boehmite with 1 hr aging time and EPD at 10 V. The process shows a weight loss of 7% at $500^{\circ}C$ in TGA and a breakdown voltage of 8 kV at $87{\mu}m$.

A Study on Malfunction Mode of CMOS IC Under Narrow-Band High-Power Electromagnetic Wave (협대역 고출력 전자기파로 인한 CMOS IC에서의 오동작 특성 연구)

  • Park, Jin-Wook;Huh, Chang-Su;Seo, Chang-Su;Lee, Sung-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.9
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    • pp.559-564
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    • 2016
  • This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

Analysis of DC insulation and properties of epoxy/ceramic composites with nanosized ZnO/TiO2 fillers

  • Kwon, Jung-Hun;Kim, Yu-Min;Kang, Seong-Hwa;Kim, Pyung-Jung;Jung, Jong-Hoon;Lim, Kee-Joe
    • Journal of Ceramic Processing Research
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    • v.13 no.spc2
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    • pp.332-335
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    • 2012
  • A molded transformer is maintenance-free, which makes it unnecessary to replace the insulating material, like in an oil-filled transformer, because the epoxy, which is a molded insulating resin, does not suffer variations in its insulating performance for heat cycles over a long time, as compared to insulating oil. In spite of these advantages, a molded transformer may still be accessed by the user, which is not good in regards to reliability or noise compared to the oil transformers. In particular, a distrust exists regarding reliability due to the long-term insulating performance. These properties have been studied in regards to the improvement of epoxy composites and molded transformer insulation. There have nevertheless been insufficient investigations into the insulation properties of epoxy composites. In this study, it is a researching of the epoxy for insulating material. In order to prepare the specimens, a main resin, a hardener, an accelerator, and a nano/micro filler were used. Varying amounts of TiO2 and ZnO nano fillers were added to the epoxy mixture along with a fixed amount of micro silica. This paper presents the DC insulation breakdown test, thermal expansion coefficient, and thermal conductivity results for the manufactured specimens. From these results, it has been found that the insulating performance of nano/micro epoxy composites is improved as compared to plain molded transformer insulation, and that nano/micro epoxy composites contribute to the reliability and compactness of molded transformers.

Advances in Power Semiconductor Devices for Automotive Power Inverters: SiC and GaN (전기자동차 파워 인버터용 전력반도체 소자의 발전: SiC 및 GaN)

  • Dongjin Kim;Junghwan Bang;Min-Su Kim
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.2
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    • pp.43-51
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    • 2023
  • In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

Nonchange of Grounding Current due to Equipment Measuring Insulation Resistance (절연저항 측정 장치에 의한 지락사고 전류의 비변화)

  • Um, Kee-Hong;Lee, Kwan-Woo
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.15 no.3
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    • pp.175-180
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    • 2015
  • With progress in industrialization, facilities for generating, delivering, and receiving high levels of electric power are in great demand. The scale of electric power equipment is increasing in both size and complexity. This has contributed to the development of our modern, high-tech and information-based society. However, if the generation of electric power is suspended due to unexpected accidents at power facilities or power stations, a range of equipment the operations of which are dependent on electric power can be damaged, causing substantial socioeconomic losses in an industrial society. A great deal of time and money would be expended to repair damaged facilities at a power station, causing enormous economic loss.In order to detect the deterioration processes of power cables, and to prevent the destruction of power cables, the operation status of power cables should be monitored on a regular basis. We have installed equipment at Korea Western Power Co., Ltd., located in Taean, in order to predict and prevent the destruction of power cables. This is an entirely new installation: a set of equipment invented specifically to measure the insulation resistance of power cables. Installation of the equipment does not cause the flow of earth fault current. This ensures accurate measurement of insulation resistance values by the equipment. We have been studying this equipment in order to develop preventive technology that would show the deterioration processes of power cables.

The Electric Characteristics of the Thermal Aged Insulation-Paper with Moisture Content on the Transformer (변압기 절연지의 수분함량 및 열화에 따른 전기적 특성 연구)

  • Kim, Pil-Hwan;Kim, Ju-Han;Lee, Byung-Sung;Lee, Won-Yeong;Kim, Do-Young;Han, Sang-Ok
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1909-1911
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    • 2004
  • It is caused that insulation paper, which had got a lot of thermal stress by over-load after installation, should have been deteriorated in electrical and mechanical characteristics. Beside, insulation material is decreased the insulating property and accelerated aging of them in case of dielectric loss when transformers are manufactured with some moisture or transformers would have been them because of moisture-permeation, Therefore, in this study we experienced the influence of moisture content in case of the thermal aged insulation paper. we have measured tan ${\delta}$ and breakdown voltage in the ratio of paper' moisture content before the aging and then taken the same tests again after insulation paper thermally accelerating-aged. There is a purpose to gain data for a life-design and to establish aging mechanism in order to continuously study life expectancy of the insulation paper.

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Study on the electric properties of layered $BaTiO_3$ films prepared new stacking method (새로운 방법으로 제조된 적층구조 $BaTiO_3$ 박막의 전기적 특성에 관한 연구)

  • Song, Man-Ho;Lee, Yun-Hi;Hahn, Taek-Sang;Oh, Myung-Hwan;Yoon, Ki-Hyun
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1129-1132
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    • 1995
  • In the preparation of the layered $BaTiO_3$ thin films with high performance, the new stacking method using the continuous cooling of the substrate was introduced. Amorphous/polycrystalline $BaTiO_3$ layered structure was confirmed by SEM and index of refraction. The layered $BaTiO_3$ thin films formed by the new stacking method showed such a high dielectric constant that the layered structure could not be explained by a stacking structure of the two defined layers but could only be explained by multi-layered structure, i.e. amorphous/micro crystalline/polycrystalline structure. The layered $BaTiO_3$ thin film with a thickness of 240 nm showed higher capacitance per unit area and breakdown strength than the double layered $BaTiO_3$ thin film prepared by the conventional stacking method. And well defined ferroelectric hysteresis leer was observed in the layered $BaTiO_3$ thin film with a thickness of 200 nm.

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A Study on Chemical Characteristic of Electrically and Thermally Treated MPPF Capacitor Elements (MPPF 커패시터의 전기적, 열적 열화시 소체의 화학적특성에 관한 연구)

  • Koo, Kyo-Sun;Song, Hyun-Seok;Lee, Dong-Zoon;Kwak, Hee-Ro;Shong, Kil-Mok
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.227-230
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    • 2001
  • This paper divides the factors of an accident into two parts, that are electrical deterioration and thermal deterioration, to analyze a characteristic of the factor of an accident which can break out in the capacitor of metal vaporized polypropylene film. For the purpose of creating capacitor which is caused by electric deterioration, we applied DC overvoltage, induced self-healing and breakdown from element. We applied gradual heat to get an element which is cause by thermal deterioration. The chemical structure of the shape and surface is analyzed by thermogravimetric analyzer (TGA), Scanning Electron Microscope (SEM) and Fourier Transform Infrared Spectrometer(FT-IR). As a result, the peak of methylene group came out, in case of electrical deterioration, as observing the self-healing point. However, the peak is disappeared in the heat treated element by 500[$^{\circ}C$], and the peak of carbonyl group which has C=O came out in case of thermal deterioration.

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