• 조명전기설비학회논문지
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• 제15권5호
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• pp.14-19
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• 2001

전계해석법을 이용하여 나타내었다. 이때 모의한 GIS 챔버내 금속이물의 위치는 전극부착시, 외함부착시 그리고 자유운동시로 하였다. 그 결과 GIS챔버의 절연파괴전계의 경우, 전극에 파티클 부착시가 가장 작게 나타났고, 파티클 자유운동시가 중간, 외함에 파티클 부착시가 가장 작게 나타남을 알 수 있었다. 또한 파티클 위치에 따른 전계해석의 경우 전극에 파티클 부착시가 가장 크게 나타났고, 파티클 자유운동시가 중간, 외함에 파티클 부착시가 가장 작게 나타났다. 이 결과는 국내 GIS의 절연설계에 설제적인 참고자료가 될 것으로 사료된다.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.403-409
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• 2007

In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.453-454
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• 2011

With the transmission line the ratio of lightning breakdown the while whole breaking down is occupying a high share with average 72%, is a tendency which increases continuously. In order decreasing the back flashover faults from like this lightning breakdown, it is very important to maintain grounding resistance of tower below target. In this paper, we synthetically analyzed the grounding resistance reduction effect of tower foundation and standard ground connection from construction site, and investigated efficiency for ways to increase the length of counter poise and expand the size of conductivity concrete materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
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• pp.65-68
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• 2003

In this paper, we researched breakdown characteristics of paper/liquid nitrogen composite insulation system for application of a high temperature superconducting cable. And, we have studied the AC breakdown performance of paper/ice composite insulating system immersed in liquid nitrogen. The electric strength in this paper/ice composite system is higher than that of paper/liquid nitrogen system. Furthermore this system shows a self-healing type breakdown behavior. Among the many kinds of liquid to be immersed and frozen to the ice, deionized water gives the highest electric breakdown strength. The paper/ice composite insulation system is thought to be one of good candidate for the electrical insulating system at cryogenic temperature.

• 조명전기설비학회논문지
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• 제12권2호
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• pp.85-90
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• 1998

본 논문에서는 AC 전압 하에서 자유 도전성 금속이물 혼입에 의한 SF6 가스로 압축된 GIS의 절연특성에 관하여 연구하였다. GIS 내에서 자유 도전성 금속이물이 혼입되면 절연파괴 전압을 낮추는 결정적인 역할을 할 수 있으므로, 금속이물의 재질과 크기에 따른 부상전계 및 절연파괴전압을 측정하였다. 구리, 철, 알루미늄의 선형 금속이물에서의 부상전계 계산값과 측정값을 비교, 분석하였다. 압축된 $SF_6$ 가스로 절연된 동축원통전극간에 금속이물의 혼입될 경우의 절연파괴전압은 금속이물의 없을 때보다 낮게 나타났으며, 금속이물의 재질과 크기에 상당히 의존하였다. 따라서 자유도전성 금속이물은 GIS의 절연파괴 특성에 매우 중요한 요소로 작용함을 알 수 있었다.

• 전기학회논문지
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• 제56권7호
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• pp.1282-1287
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• 2007

We investigated the damage of the CMOS IC which manufactured three different technologies by high power microwave. The tests separated the two methods in accordance with the types of the CMOS IC located inner waveguide. The only CMOS IC which was located inner waveguide was occurred breakdown below the max electric field (23.94kV/m) without destruction but the CMOS IC which was connected IC to line organically was located inner waveguide and it was occurred breakdown and destruction below the max electric field. Also destructed CMOS IC was removed their surface and a chip condition was analyzed by SEM. The SEM analysis of the damaged devices showed onchuipwire and bondwire destruction like melting due to thermal effect. The tested results are applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial electromagnetic wave environment and are applied to the data which understand electromagnetic wave effects of electronic equipments.

• 전기학회논문지
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• 제62권5호
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• pp.649-656
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• 2013

A conventional epoxy-microsilica composite (EMC) and an epoxy-microsilica-nanosilicate composite (EMNC) were prepared in order to apply them to mold-type transformers, current transformers (CT) and potential transformers (PT). Nanosilicate was exfoliated in a epoxy resin using our electric field dispersion process and AC insulation breakdown strength at $30{\sim}150^{\circ}C$, glass transition temperature and viscoelasticity were studied. AC insulation breakdown strength of EMNC was higher than that of EMC and that value of EMNC was far higher at high temperature. Glass transition temperature and viscoelasticity property of EMNC was higher than those of EMC at high temperature. These results was due to the even dispersion of nanosilicates among the nanosilicas, which could be observed using transmission electron microscopy (TEM). That is, the nanosilicates interrupt the electron transfer and restrict the mobility of the epoxy chains.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.206-209
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• 2002

With the progress of semiconductor processing technology, avalanohe photodiodes (APDs) based on InP/InGaAs are used for high-speed optical receiver modules. Planar-type APDs give higher reliability than mesa-type APDs. However, Planar-type APDs are struggled with a problem of intensed electric field at the junction curvature, which causes edge breakdown phenomena at the junction periphery. In this paper, we focused on studying the effects of junction curvature for APDs performances by different etching processes followed by single diffusion to from p-n junction. The performance of each process is characterized by observing electric field profiles and carrier generation rates. From the results, it can be understood to predict the optimum structure, which can minimize edge breakdown and improve the manufacturability.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.431.2-431.2
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• 2014

The dielectric breakdown voltage (DBV) is a measure of an insulating fluids ability to withstand a high electric field stress without breaking down. Conventionally, the presence of water or particulate matter in a dielectric fluid comprises the liquid's breakdown strength. However, the addition of magnetic nanoparticles (MNPs) in the base oil can increase the dielectric breakdown voltage of the fluid reversely, if the condition of the added particles in the fluid is in balance with that of keeping down the initiation and propagation of electrical streamers. In this study, we developed a mathematical model by a set of coupled, nonlinear equations using the COMSOL multiphysics finite element simulation suite and calculated the dielectrophoretic activity of magnetic nanoparticles suspended in the presence of electric field, which is the behavior responsible for enhancing the dielectric characteristics of transformer oil, in order to examine how the activity differ in a transformer oil-based magnetic fluid.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.177-179
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• 1990

Recently, it is reported that the behaviour of PECVD under high electric field and current condition has a major effect on MNS device degradation. In this paper, we evaluated the breakdown and TDDB characteristics of Laser assisted PECVD SiN films which is introduced new deposited method. And also, long term insulator breakdown reliability is described by examing time dependent dielectric breakdown under positive voltage. Failure tines against electric field are examined and acceleration factors are obtained for each case. From these data, breakdown wearout limitation for Laser Assisted PECVD SiN film can be characterized.