• Journal of Electrical Engineering and Technology
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• v.10 no.5
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• pp.2089-2098
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• 2015

With the continuous development in insulation of electrical equipment design, the reliability of the system has been enhanced. However, in the manufacturing process and during operation under continues stresses introduce local defects, such as voids between interfaces that can responsible to occurrence of partial discharge (PD), electric field distortion and accumulation of charges. These defects may lead to localize corrosion and material degradation of insulation system, and a serious threat to the equipment. A model of three layers of PI film with air gap is presented to understand the influence of interface and voids on exploitation conditions such as strong electrical field, PD activity and charge movement. The analytical analysis, and experimental results are good agreement and show that the lose contact between interfaces accumulate more residual charges and in consequences increase the electric field intensity and accelerates internal discharges. These residual charges are trapped charges, injected by the electrodes has often same polarity, so the electric field in cavities increases significantly and thus partial discharge inception voltage (PDIV) decreases. Contrary, number of PD discharge quantity increases due to interface. Interfacial polarization effect has opposite impact on electric field and PDIV as compare to void.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.8
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• pp.30-38
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• 2011

This paper proposes a new intelligent diagnosis equipment for the partial discharge, which keeps deteriorating the insulating materials inside electric machineries, ultimately leading to electrical breakdown. In order to simulate experimentally the partial discharge inside the electric machinery, the tip-to-plate, the sphere-to-plate, the sphere-to-sphere and the plate-to-plate electrodes are used respectively, of which the gaps are 1[mm], 3[mm] or 5[mm] and the applied voltages are 3[kV], 5[kV] or 7[kV]. Ceramic coupler sensor and FIR digital filter are used to measure the partial discharge and the artificial neural network is used for the deterioration diagnosis of the electric machinery. The microprocessor of PD diagnosis equipment is DSP (TMS320C6713) with FPGA (Cyclone II). The results of the real-time and on-line experiments performed with the developed equipment are also explained.

• Journal of Electrical Engineering and Technology
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• v.8 no.4
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• pp.808-812
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• 2013

Multilayer capacitors with high ripple current and high capacitance were manufactured. The electrical properties of these capacitors were characterized for potential application for DC-link capacitors in hybrid electric vehicle inverters. Internal electrode structures were designed to achieve high capacitance and reliability. A single multilayer capacitor showed $0.46{\mu}F/cm^3$ of capacitance, 0.65% of dielectric loss, and 1450 V to 1650 V of dielectric breakdown voltage depending on the design of the internal electrode. The capacitor module designed with several multilayer capacitors gave a total capacitance of $450{\mu}F$, which is enough for hybrid electric vehicles. In particular, an equivalent series resistance of $4.5m{\Omega}$ or less will result in 60 $A_{rms}$, thereby reaching the allowed ripple current for hybrid electric vehicles.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.26 no.8
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• pp.351-356
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• 2014

Typical trouble patterns in solar thermal systems include working fluid leakage and freezing other than breakdown of pump. A fluid sensor for measuring electric resistance of fluid was developed and installed at the top of the collector piping in order to check the fault of solar system. Working fluid level in the pipe was determined by measuring electric resistance from a fluid sensor. On the base of this, it was confirmed that the fluid sensor diagnoses leakage of fluid. Electric resistance of propylene glycol aqueous solution was measured in the range of $0{\sim}70^{\circ}C$ and 0~40% of concentration. The response surface analysis was performed by using a central composite design, and the regression equation was derived from the relationship between electric resistance, temperature, and concentration. Through the experiment in a real solar system, we can estimate a concentration of working fluid when a pump is not operating and predict a possibility of freezing. Finally, an effective algorithm for trouble shooting was proposed to operate and maintain the solar system.

• Nuclear Engineering and Technology
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• v.53 no.2
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• pp.618-625
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• 2021

In this paper, the single-photon avalanche diodes (SPADs) featuring three different p-well implantation doses (∅_p-well) of 5.0 × 10¹², 4.0 × 10¹², and 3.0 × 10¹² atoms/cm² under the identical device layouts were fabricated and characterized to evaluate the effects of field enhanced mechanisms on primary dark pulses due to the maximum electric field. From the I-V curves, the breakdown voltages were found as 23.2 V, 40.5 V, and 63.1 V with decreasing ∅_p-well, respectively. By measuring DCRs as a function of temperature, we found a reduction of approximately 8% in the maximum electric field lead to a nearly 72% decrease in the DCR at V_ex = 5 V and T = 25 ℃. Also, the activation energy increased from 0.43 eV to 0.50 eV, as decreasing the maximum electric field. Finally, we discuss the importance of electric field engineering in reducing the field-enhanced mechanisms contributing to the DCR in SPADs and the benefits on the SPADs related to different types of radiation detection applications.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.2
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• pp.114-119
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• 2008

With the improvement of industrial society, the high quality electrical energy, simplification of operation and maintenance, ensuring reliability are being required. We request urgently change a $SF_6$ for an environment friendly gas insulation material. In this paper the experiments of breakdown characteristics by pressure and gap change of Imitation-Air in model GIS(Gas Insulated Switchgear) were described. Also assess of breakdown characteristics about Imitation-Air and $SF_6$. It is considered in this paper that the results are fundamental data for electric insulation design of Distribution Power Facilities which will be studied and developed in the future. The pressure to be confronted to $SF_6$ gas 1[atm] for Distribution Power Facilities is Imitation-Air 3[atm]. And we could make an environment friendly gas insulation material with maintaining dielectric strength by Imitation-Air which generates a lower level of the global warming effect.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.266-272
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• 2006

Application of power higher than the optimum operation value to an external electrode fluorescent lamps(EEFL) leads to the formation of small holes, called pinholes, which subsequently leads to lamp failure. The pinholes come from the insulating breakdown of the capacitor which is the dielectric layer between an external electrode and glass tube. The power of insulation breakdown is proportional to the electric power applied to the lamp. When a lamp current is low in the glass tube of dielectric constant K, the dielectric field strength of pinholes is about 3K kV/mm. The field strength of insulation breakdown decreases as the lamp current increases.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.12
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• pp.79-86
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• 2008

This paper presents the experimental results of impulse breakdown characteristics in $SF_6/N_2$ gas mixtures under a highly non-uniform electric field with a change in temperature. The test temperature ranges from -25[$^{\circ}C$] to 25[$^{\circ}C$]. The processes of impulse preliminary breakdown developments were analyzed by the measurements of current pulse and luminous signals. As a result, the temperature dependance of breakdown voltage for the negative polarity was much stronger than that for the positive polarity. When increasing the temperature, The leader stepping time for the negative polarity was shown to be longer than that for the positive polarity. The results presented in this paper can be used as a useful information in designing the gas insulation lines with prominent ability for lightning surge.

• Journal of IKEEE
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• v.23 no.3
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• pp.832-838
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• 2019

In this paper, 4H-SiC MOSFET, the next generation power semiconductor device, was studied. In particular, Semi-SJ MOSFET structures with improved electrical characteristics than conventional DMOSFET structures were proposed in the class of 3300V, and static characteristics of conventional and proposed structures were compared and analyzed through TCAD simulations. Semi-SuperJunction MOSFET structure is partly structure that introduces SuperJunction, improves Electric field distribution through the two-dimensional depletion effect, and increases breakdown voltage. Benefit from the improvement of breakdown voltage, which can improve the on resistance as high doping is possible. The proposed structure has a slight reduction in breakdown voltage, but has an 80% decrease in on resistance compared to the conventional DMOSFET structure, and a 44% decrease in on resistance compared to the Current Spreading Layer(CSL) structure that improves the conventional DMOSFET structure.