• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.2
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• pp.65-71
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• 2001

This paper describes partial discharge phenomenon with SF6gas pressures in insulation consisting of insulation paper and SF6 gas. We made the specimens with SF6 gas gaps which exist between aramid papers and electrodes and calculated the electric field intensity in the these gaps. We measured the partial discharge inception voltages and the AC breakdown voltages with the test method of IEC 60060-2 and did the partial discharge degradation experiments with a constant voltage. According to gas pressures, the breakdown voltages in SF6gas gaps were calculated by Paschen's law. And these results showed the ability applying partial discharge inception voltages evaluation to Paschen's law and the relationship between the PD quantities occurring insulation breakdown and PD occurring area.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.343-346
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• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1451-1453
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• 2001

An SOI(Silicon-On-Insulator) LD(Lateral Double-diffused)MOS with graded gate and recessed source is proposed. The proposed structure can increase the breakdown voltage by reducing the electric field crowding at the edge of gate. Simulation results by TSUPREM4 and MEDICI have shown that the breakdown voltage of proposed device was found to be 52 V while that of conventional device was 45 V. At the same breakdown voltage of 45 V, the on-resistance of the LDMOS with graded gate and recessed source was 14.4 % lower than that of conventional structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.675-681
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• 2005

$SF_6$ is widely used as gas insulation medium because of having excellent dielectric and arc-quenching properties. However the use of it is getting to be suppressed from the viewpoint of mitigating global warming. For the development of environmentally-benign electric power equipment and system, novel gases or mixture gases are strongly required as the substitute of $SF_6$ gas. In this study the authors constructed an experimental system to investigate insulation properties of the mixed gases composed of negative $gas(SF_6)$ and electron deceleration gases$(N_2\;and\;CO_2)$. Breakdown and prebreakdown characteristics of $SF_6/N_2/CO_2$ mixture gases were investigated using the above mentioned system for different rates and gas pressures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.289-290
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• 2008

The purpose of this paper is to analyze AC Breakdown of solid/air composite insulation depending on the thickness and the pressure of dry air for eco-friendly insulation. SF6 gas has been widely used in electric equipment as gas insulation because of high dielectric strength and arc extinguishing performance. However, because SF6 gas is one of the green house effect gases, alternative insulation such as SF6 mixture, extremely low temperature gas, vacuum, liquid and solid insulating are being investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.63-66
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• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.243-245
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• 1993

The negative curvature effect on the breakdown voltage of p-n junction, which may realize 1-D breakdown voltage due to the lower peak electric field at the junction, is proposed and verified by the fabrication of lateral diode on Silicon-on-Insulator (SOI) together with MEDICI simulation. The experimental and simulation results show good agreements with the theoretical expectation. The proposed method is effectively applicable to the lateral, especially on SOI, power devices.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.70-76
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• 1999

Analytic model for punchthrough limited breakdown voltage of cylindrical junction is presented as a function of the epitaxial layer thickness and the critical depletion width of the cylindrical junction in nonpunchthrough cases. All the expressions for the distances, electric fields and potentials are normalized, allowing quick determination of the corresponding breakdown voltages. The calculated results are in good agreement with the simulations obtained from two dimensional device simulation program MEDICI.

• Proceedings of the KSR Conference
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• 2010.06a
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• pp.1829-1834
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• 2010

In order to prepare for the commercialization of Korean tilting train, this study was made on the pre-analysis of risk factors that can happen during operation, and emergency measures for safe operation of tilting train. The purpose of the study of emergency measures is to help to make tilting train run safely by making counteraction procedures for unusual situations such as train breakdown or accidents during the operation of a tilting train so that the engineer can quickly take care of each situation. Based on the items of emergency measures for EMU operated by Korean Railroad(or Korail), possible breakdown items during operation were selected and prioritized considering the occurring frequency and emergency level of each breakdown. In addition to these items, by adding items to represent tilting train's typicalfunctions such as tilting function error, tilting storage battery's electric pressure drop, etc, a total of62 emergency items were finally selected and measures for each item was made.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.227-231
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• 2020

Silver nanowire random networks are promising candidates for replacing indium tin oxide (ITO) as transparent and conductive electrodes. They can also be used as transparent heating films with self-cleaning and defogging properties. By virtue of the Joule heating effect, silver nanowire random networks can be heated when voltage bias is applied; however, they are unsuitable for long-term use. In this work, we study the Joule heating of silver nanowire random networks embedded in polymers. Silver nanowire random networks embedded in polymers exhibit breakdown under the application of electric current. Their surface morphological changes indicate that nanoparticle formation may be the main cause of this electrical breakdown. Numerical analyses are used to investigate the temperatures of the silver nanowire and substrate.