• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.4
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• pp.301-306
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• 2014

Recently in accordance with the rapid development of the industrial society, the accidents caused by dielectric breakdown have been increasing in power grid. It is important to prevent the dielectric breakdown of a high voltage apparatus to reduce the damage from electrical hazards. To establish an electrically reliable database of insulation design criteria for high voltage apparatus, a study on dielectric characteristics test is indispensable. In this study, dielectric characteristics according to field utilization factors (${\xi}$) which are represented as the ratio of mean electric field to maximum electric field are investigated. the dielectric breakdown experiments by using several kinds of electrode systems made with stainless steel are performed by AC breakdown voltage under air-insulation. Also, the experimental results are analyzed by the Weibull distribution. As a result, it is found that the dielectric characteristics of air-insulation are determined by ${\xi}$ as well as arrangement of electrode systems. It is considered that the results of this study would be applicable to designing the air-insulated high voltage apparatuses.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.114-118
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• 1989

Due to the increased integration density of VLSI circuits a highly reliable thin oxide film is required to fabricate a small geometry MOS device. The behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration and also the practical use of MOS device under irradiation has cause the degration of thin oxide films. In this paper, in order to evaluate the reliability of thin oxides with no stress applied and stressed by the irradiation under low electric field, the tests of TDDB (Time-dependent-dielectric breakdown) are used. Failure times against electric field are examined and acceleration factor is obtained for each case. Based on the experimental data, breakdown wear out limitation for thin oxide films is characterised.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.143-146
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• 1994

In older to investigate the properties of electric conduction in low density polyethylene(LDPE) for power cable, the thickness of specimen was the 30, 100($\mu\textrm{m}$) of LDPE. The experimental condition for conductive properties was measured until the breakdown occurs at temperature ranges from 30 to 110[$^{\circ}C$] and in the electric field of 1 to 5 ${\times}$10$^2$[Mv/m]. As for increase of temperature, the current density of LDPE was increased with constant ratio in low field, but changes with exponential function in high field. The tunnel current of pre-breakdown region is shifted toward low field as much as thermal excitation energy.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.756-760
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• 1988

The paper presents the measurement results on the parameters affecting the breakdown mechanism of a large air spacing under switching impulse voltages. Measured parameters are the velocities of leader channels, predischarge currents, electric charges injected into the rod-plane air gap and electric field intensities on the plane. For the 3m air gap under switching impulse voltages, the velocities of leader channel have been measured to be of 1cm/${\mu}s$ - 5cm/${\mu}s$, electric field intensity of 2kv/cm, predischarge current of 1.2A - 1.6A, the charges injected into the air gap of 11 - 40 ${\mu}$C for 400-887kV impulse voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.256-257
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• 2008

Recently, with the increase of demand of electricity, electric cable or electric transfer machine are rapidly developed and meet the demand with the extra high voltage and massive capacity, the dangers of electrical accident of insulator are increasing by the electric stress, insulation degradation and insulation breakdown in insulator. In this paper, it is investigated that the temperature dependance of dielectric strength in nano-composites. We obtained that breakdown voltage of 0.4 [wt%] specimens is higher than the other $SiO_2$ content.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1602-1604
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• 2000

When insulators are operated near cement factories, some amount of cement powder may be stuck on the surface of insulators and decreases their electrical performances. Three kinds of insulators, such as, silicone EPDM and porcelain insulators, are tested in this paper. Testing Voltage of 25kV is applied to the samples, and surface leakage current is measured for 6 months after cement solvent of 10 vol% was stuck on the surface of each insulator in the laboratory. Insulation layers are cut from 3 and 6 month-aged insulators and tested for ac breakdown, impulse breakdown, contact angle. After aging, electrical properties are unchanged in silicone and EPDM insulators but show some changes in porcelain insulators.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.12
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• pp.1290-1295
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• 1991

The paper presents the measurement results on the parameters affecting the breakdown mechanism of a large air spacing under switching impulse voltages. Measured parameters are the velocities of leader channels, predischarge currents, electric charges injected into the rod-plane air gap and electric field intensities on the plane. For the 3m air gap under switching impulse voltages, the velocities of leader channel have been measured to be of 1cm/x10S0-6Ts - 5cm/x10S0-6Ts, electric field intensity of 2kv/cm, predischarge current of 1.2-1.6A, the charges injected into the air gap of 11-40x10S0-6TC for 400-887kV impulse voltages.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.138-144
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• 1994

Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

• Journal of information and communication convergence engineering
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• v.16 no.1
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• pp.43-47
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• 2018

The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.278-282
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• 2007

In the complex insulation system that is used in extra high voltage(EHV) devices, according to the trend for electric power equipment of high capacity and reduction of its size, macro interfaces between two different bulk materials which affect the stability of insulation system exist inevitably. In this paper, the dielectric strength decrease of the macro interfaces between epoxy and ethylene propylene diene terpolymer(EPDM) was estimated by using the applied voltage to breakdown time characteristics. Firstly, the AC short time dielectric strength of specimens was measured at room temperature. Then, the breakdown time was measured under the applied constant voltage which is 70% of short time breakdown voltage. With these processes, the life exponent n was determined by inverse power law, and the long time breakdown voltage can be evaluated. The best condition of the interface was LOS(low viscosity(350 cSt) silicone oil spread specimen). When 30 years last on the specimens, the breakdown voltage was estimated 44% of the short time breakdown voltage.