• The Transactions of the Korean Institute of Electrical Engineers B
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• v.54 no.10
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• pp.483-491
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• 2005

To solve the 3D eddy current problems by using FE(finite element) method with MVP(magnetic vector potential) and electric scalar potential, Coulomb gauge condition and current continuity condition have to be considered. Coulomb gauge condition enforced on existing FE formulations to insure the uniqueness of MVP looks unnatural and current continuity condition which can be driven from Ampere's law looks unnecessary. So in this paper the effect of two conditions on FE formulations are investigated in order to help to obtain accurate numerical simulation results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.8
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• pp.594-598
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• 2018

The tangential electric polarizability of a electrically small square patch, which is commonly used in metasurfaces, is calculated using electric potential continuity. Since the potential at the patch surface is not uniform due to the equivalent electric dipole located at the center, there is a problem in that the polarizability is not uniquely defined. To obtain equivalent polarizability, the meshes in the analysis area are divided on the patch surface, and the equivalent polarizability is calculated by averaging the polarizabilities obtained at each point. The results of the proposed method, third-power series approximation, and experimental equations are compared and verified. Finally, the magnitude and phase of the reflection coefficient of patch metasurface calculated by generalized sheet transition conditions(GSTCs) are in good agreement with the HFSS simulation results.

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.97-103
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• 2001

The effects of the electrohydrodynamic (EHD) flow and turbulent diffusion on the collection efficiency of a model ESP composed of the plates with a cavity were studied through numerical computation. The electric field and ion space charge density were calculated by the Poisson equation of the electrical potential and the current continuity equation. The EHD flow field was solved by the continuity and momentum equations of the gas phase including the electrical body force induced by the movement of ions under the electric field. The RNG $k-{\varepsilon}$ model was used to analyze the turbulent flow. The particle concentration distribution was calculated from the convective diffusion equation of the particle phase. As the ion space charge increased, the particulate collection efficiency increased because the electrical potential increased over the entire domain in the ESP. The collection efficiency decreased and then increased, i.e. had a minimum value, as the EHD circulating flow became stronger when the electrical migration velocity of the charged particle was low. However, the collection efficiency decreased with the stronger EHD flow when the electrical migration of the particle was higher relatively. The collection efficiency of the model ESP increased as the turbulent diffusivity of the particle increased when the electrical migration velocity of the particle was low. However, the collection efficiency decreased for increasing the turbulent diffusivity when the electrical migration of the particle was higher relatively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.587-595
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• 1998

Transient thermal analysis simulations are carried out using a modeling program to understand the human body model HBM ESD. The devices were simulated a one-dimensional device subjected to ESD stress by solving Poison's equation, the continuity equation, and heat flow equation. A ramp rise with peak ESD voltage during rise time is applied to the device under test and then discharged exponentially through the device. LDD and NMOS structures were studied to evaluate ESD performance, snap back voltages, device heating. Junction heating results in the necessity for increased electron concentration in the space charge region to carry the current by the ESD HBM circuit. The doping profile adihacent to junction determines the amount of charge density and magnitude of the electric field, potential drop, and device heating. Shallow slopes of LDD tend to collect the negative charge and higher potential drops and device heating.

• Advances in Computational Design
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• v.5 no.1
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• pp.55-89
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• 2020

For the first time, an accurate analytical solution, based on coupled three-dimensional (3D) piezoelasticity equations, is presented for free vibration analysis of the angle-ply elastic and piezoelectric flat laminated panels under arbitrary boundary conditions. The present analytical solution is applicable to composite, sandwich and hybrid panels having arbitrary angle-ply lay-up, material properties, and boundary conditions. The modified Hamiltons principle approach has been applied to derive the weak form of governing equations where stresses, displacements, electric potential, and electric displacement field variables are considered as primary variables. Thereafter, multi-term multi-field extended Kantorovich approach (MMEKM) is employed to transform the governing equation into two sets of algebraic-ordinary differential equations (ODEs), one along in-plane (x) and other along the thickness (z) direction, respectively. These ODEs are solved in closed-form manner, which ensures the same order of accuracy for all the variables (stresses, displacements, and electric variables) by satisfying the boundary and continuity equations in exact manners. A robust algorithm is developed for extracting the natural frequencies and mode shapes. The numerical results are reported for various configurations such as elastic panels, sandwich panels and piezoelectric panels under different sets of boundary conditions. The effect of ply-angle and thickness to span ratio (s) on the dynamic behavior of the panels are also investigated. The presented 3D analytical solution will be helpful in the assessment of various 1D theories and numerical methods.

• Smart Structures and Systems
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• v.6 no.8
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• pp.921-938
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• 2010

Most of studies on control of beams containing piezoelectric sensors and actuators have been based on linear quadratic regulator (LQR) with state feedback or output feedback law. The aim of this study is to develop velocity-acceleration feedback law in the optimal control of smart piezoelectric beams. A new controller which is an optimal control system with velocity-acceleration feedback is presented. In finite element modeling of the beam, the variation of mechanical displacement through the thickness is modeled by a sinus model that ensures inter-laminar continuity of shear stress at the layer interfaces as well as the boundary conditions on the upper and lower surfaces of the beam. In addition to mechanical degrees of freedom, one electric potential degree of freedom is considered for each piezoelectric element layer. The efficiency of this control strategy is evaluated by applying to an aluminum cantilever beam under different loading conditions. Numerical simulations show that this new control scheme is almost as efficient as an optimal control system with state feedback. However, inclusion of the acceleration in the control algorithm increases practical value of a system due to easier and more accurate measurement of accelerations.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.2
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• pp.71-82
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• 1984

A programme, called BIPOLE, for the numerical analysis of twotimensional n-p-n bipolar transistors was developed. It has included the SRH and Auger recolnbination processes, the mobility dependence on the impurity density and the electric field, and the band-gap narrowing effect. The finite difference equations of the fundamental semiconductor equations are formulated using Newton's method for Poisson's equation and the divergence theorem for the hole and electron continuity equations without physical restrictions. The matrix of the linearized equations is sparse, symmetric M-matrix. For the solution of the linearized equations ICCG method and Gummel's algorithm have been employed. The programme BIPOLE has been applied to various kinds of the steady-state problems of n-p-n transistors. For the examples of applications the variations of common emitter current gain, emitter and diffusion capacitances, and input and output characteristics are calculated. Three-dimensional representations of some D.C. physical quantities such as potential and charge carrier distributions were displayed. This programme will be used for the nome,rical analysis of the distortion phenom ana of two-dimensional n-p-n transistors. The BIPOLE programme is available for everyone.